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    DRAM DDR Search Results

    DRAM DDR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    CDCV857ADGGR Texas Instruments 2.5V SSTL-II Phase Lock Loop Clock Driver for Double Data-Rate Synchronous DRAM Applications 48-TSSOP 0 to 85 Visit Texas Instruments
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    DRAM DDR Price and Stock

    Altera Corporation IPR-SDRAM/HPDDR

    Development Software DDR SDRAM Control MegaCore RENEWAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPR-SDRAM/HPDDR
    • 1 $995
    • 10 $995
    • 100 $995
    • 1000 $995
    • 10000 $995
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    Altera Corporation IPR-SDRAM/LPDDR2

    Development Software DDR2 SDRAM Control MegaCore RENEWAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPR-SDRAM/LPDDR2
    • 1 $995
    • 10 $995
    • 100 $995
    • 1000 $995
    • 10000 $995
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    Altera Corporation IPR-SDRAM/DDR3

    Development Software DDR3 SDRAM Control MegaCore RENEWAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPR-SDRAM/DDR3
    • 1 $995
    • 10 $995
    • 100 $995
    • 1000 $995
    • 10000 $995
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    Altera Corporation IPR-SDRAM/HPDDR2

    Development Software DDR2 SDRAM Control MegaCore RENEWAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPR-SDRAM/HPDDR2
    • 1 $995
    • 10 $995
    • 100 $995
    • 1000 $995
    • 10000 $995
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    Altera Corporation IP-SDRAM/HPDDR

    Development Software DDR SDRAM Control MegaCore
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IP-SDRAM/HPDDR
    • 1 $3995
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    DRAM DDR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


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    PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    0909NS

    Abstract: GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3
    Text: DRAM Code Information 1/9 K4XXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E : EDO F : FP G : GDDR5 SDRAM H : DDR SDRAM J : GDDR3 SDRAM K : Mobile SDRAM PEA


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    PDF 16K/16ms 4K/32ms 8K/64ms 16K/32ms 8K/32ms 2K/16ms 4K/64ms 429ns 667ns 0909NS GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3

    M13S2561616A-5TG

    Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
    Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now


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    PDF 256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 DRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    400x875

    Abstract: K4C560838F-TCD3 K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA
    Text: K4C5608/1638F 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.0 - 1 - REV. 0.0 Dec. 2003 K4C5608/1638F 256Mb Network-DRAM Revision History Version 0.0 Dec./ 2003 - First Release - 2 - REV. 0.0 Dec. 2003 K4C5608/1638F 256Mb Network-DRAM General Information


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    PDF K4C5608/1638F 256Mb 400Mbps) 366Mbps 333Mbps 400x875 K4C560838F-TCD3 K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA

    K4C560838C-TCD3

    Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
    Text: K4C5608/1638C 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.7 - 1 - REV. 0.7 Aug. 2003 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz) K4C560838C-TCD3 K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.6 - 1 - REV. 0.6 Apr. 2003 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz)

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.3 - 1 - REV. 0.3 Apr. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz)

    fast page mode dram controller

    Abstract: ispMACH M4A3 decoder.vhd 16bit microprocessor using vhdl LC4256ZE MC68340 mach memory controller 1KByte DRAM RD1014 vhdl code for sdram controller
    Text: Fast Page Mode DRAM Controller November 2010 Reference Design RD1014 Introduction Fast Page Mode DRAM FPM DRAM offers improved speed over standard DRAM since memory accesses performed within the same address row (page) require a precharge only for the first access. Subsequent accesses


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    PDF RD1014 MC68340, 1-800-LATTICE fast page mode dram controller ispMACH M4A3 decoder.vhd 16bit microprocessor using vhdl LC4256ZE MC68340 mach memory controller 1KByte DRAM RD1014 vhdl code for sdram controller

    K4C560838C-TCD3

    Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.4 - 1 - REV. 0.4 May. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz) K4C560838C-TCD3 K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA

    decoder.vhd

    Abstract: LC4256ZE MC68340 vhdl code for 8-bit parity generator 180lt128 RAS20 4 bit microprocessor using vhdl
    Text: Fast Page Mode DRAM Controller February 2010 Reference Design RD1014 Introduction Fast Page Mode DRAM FPM DRAM offers improved speed over standard DRAM since memory accesses performed within the same address row (page) require a precharge only for the first access. Subsequent accesses


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    PDF RD1014 MC68340, 1-800-LATTICE decoder.vhd LC4256ZE MC68340 vhdl code for 8-bit parity generator 180lt128 RAS20 4 bit microprocessor using vhdl

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz) 256Mb

    K4C560838C-TCB

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    PDF K4C5608/1638C 256Mb Orga41 K4C560838C-TCB

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    TN4612

    Abstract: mobile dram IDD8
    Text: TN-46-12: Mobile DRAM Power-Saving Features/Calculations Introduction Technical Note Mobile DRAM Power-Saving Features and Power Calculations Introduction It’s important for today’s mobile system designer to be aware of the power demands of the system DRAM. A key concern is the DRAM’s average power consumption, which


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    PDF TN-46-12: TN-46-03, 09005aef81b29582/Source: 09005aef818eb5b9 TN4612 mobile dram IDD8

    MCF5206

    Abstract: RC10 RC11 00FE0000
    Text: SECTION 10 DRAM CONTROLLER 10.1 INTRODUCTION The DRAM controller DRAMC provides a glueless interface between the ColdFire core and external DRAM. The DR a M c supports two banks of DRAM. Each DRAM bank can be from 128 kbyte to 256 Mbyte. The D r A m C can support DRAM bank widths of 8, 16, or 32


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    PDF 33Mhz) 0x00100000 0x000e0000, 0x0010-0x001effff 32-bit 512-byte MCF5206 RC10 RC11 00FE0000

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


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    PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process


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    PDF MT4C16260/1 500mW 024-cycle MT4C16261 40-Pin

    4C8512

    Abstract: No abstract text available
    Text: ADVANCE 512K M T4C 8 512/3 S W IDE DRAM X 8 512K x 8 DRAM WIDE DRAM EXTENDED REFRESH SELF REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • A ddress entry: ten row -addresses, nine colum naddresses


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    PDF MT4C8513 024-cycle 128ms 350mW 28-Pin MT4C8512/3 4C8512

    Untitled

    Abstract: No abstract text available
    Text: MT4C1006J 4 MEG X 1 DRAM M IC R O N DRAM 4 MEG X 1 DRAM DRAM STATIC-COLUMN FEATURES • Industry-standard xl pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single+5V ±10% power supply • Low power, 3mW standby; 275mW active, typical


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    PDF MT4C1006J 275mW 024-cycle 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Sam sung KM M 5361203BW is a 1M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


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    PDF KMM5361203BW/BWG KMM5361203BW/BWG 1Mx36 1Mx16 5361203BW KMM5361203BW cycles/16m KMM5361203BW

    jeida dram 88 pin

    Abstract: 88pins toshiba dram jeida dram card 5v 88 pins dram card
    Text: Introduction D R A M ^fe TYPICAL DRAM CARD APPLICATIONS Typical DRAM memory card applications include portable computers, fax machines, electronic instruments, printers and PDAs. THE TOSHIBA DRAM PRODUCT LINE UP Toshiba has migrated to the 88-pin standard, which has replaced the older 38- and 60-pin DRAM cards. Toshiba


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    PDF 88-pin 60-pin jeida dram 88 pin 88pins toshiba dram jeida dram card 5v 88 pins dram card

    Untitled

    Abstract: No abstract text available
    Text: |U llC R O N 256K MT4C16260 X 16 DRAM 256K x 16 DRAM DRAM FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • A ddress entry: ten row -addresses, eight colum naddresses • H igh-perform ance CMOS silicon-gate process • Single +5V+10% pow er supply*


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    PDF MT4C16260 375mW 024-cycle 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: I * * • " /G PRELIMINARY MICRON I 256K SEMICONDUCTOR MC WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • A ddress entry: ten row -addresses, eight colum naddresses


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    PDF MT4C16260/1 500mW 024-cycle M74Cl626Q, C1993,