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    K4C560838C-TCB

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


    Original     		PDF K4C5608/1638C 256Mb Orga41 K4C560838C-TCB

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638M 256Mb FCRAM FCRAM Specification Version 0.0 - 1 - REV. 0.0 Oct. 2001 K4C5608/1638M 256Mb FCRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Notice : FCRAM is a Trademark of Fujitsu Limited, Japen - 2 - REV. 0.0 Oct. 2001 K4C5608/1638M


    Original     		PDF K4C5608/1638M 256Mb 200MHz) 154MHz 256Mx8 K4C560838M-TCB

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


    Original     		PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz) 256Mb

    L-23014-01

    Abstract: L24002 mitsubishi cdram
    Text: L-21001-0B MITSUBISHI ELECTRIC Mitsubishi DRAM Technical Direction High Performance, Low Power,High Density,High Speed etc. High Density Wide Bit Organization 1G High Speed 512M Direct Rambus TM x32 256M DDR 128M SDRAM EDO Fast Page 64M DRAM Self Refresh


    Original     		PDF L-21001-0B L-21002-0I x4/x8/x16 L-23014-01 L24002 mitsubishi cdram

    L24002

    Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities


    Original     		PDF L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP

    K4C560838C-TCD3

    Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.4 - 1 - REV. 0.4 May. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


    Original     		PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz) K4C560838C-TCD3 K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA

    K4C560838C-TCD3

    Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
    Text: K4C5608/1638C 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.7 - 1 - REV. 0.7 Aug. 2003 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


    Original     		PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz) K4C560838C-TCD3 K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA

    K4C560838F-TCD3

    Abstract: K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA
    Text: K4C5608/1638F 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.3 - 1 - REV. 0.3 Jan. 2005 K4C5608/1638F 256Mb Network-DRAM Revision History Version 0.0 Dec./ 2003 - First Release Version 0.1 (Aug./ 2004) - Deleted BL2 and self refresh Version 0.2 (Nov./ 2004)


    Original     		PDF K4C5608/1638F 256Mb 400Mbps) 366Mbps 333Mbps K4C560838F-TCD3 K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA

    sandisk micro sd card pin

    Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM


    Original     		PDF L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi

    400x875

    Abstract: K4C560838F-TCD3 K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA
    Text: K4C5608/1638F 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.0 - 1 - REV. 0.0 Dec. 2003 K4C5608/1638F 256Mb Network-DRAM Revision History Version 0.0 Dec./ 2003 - First Release - 2 - REV. 0.0 Dec. 2003 K4C5608/1638F 256Mb Network-DRAM General Information


    Original     		PDF K4C5608/1638F 256Mb 400Mbps) 366Mbps 333Mbps 400x875 K4C560838F-TCD3 K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.6 - 1 - REV. 0.6 Apr. 2003 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


    Original     		PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz)

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.3 - 1 - REV. 0.3 Apr. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


    Original     		PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz)

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


    OCR Scan     		PDF TC59LM814/06CFT-50 304-WORDSX4BANKSX 16-BITS 608-WORDSX4BANKSX8-BITS TC59LM814/06CFT TC59LM814CFT 304-wordsX4 TC59LM806CFT

    lm815

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59LM815/07/03BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM


    OCR Scan     		PDF TC59LM815/07/03 BFT-22 304-WORDSx4BANKSx 16-BITS 608-WORDSX4BANKSX8-BITS 216-WORDS TC59LM815/07/03BFT TC59LM815BFT 304-wordsX4 TC59LM807BFT lm815

    TC59WM715

    Abstract: TC59WM71
    Text: TOSHIBA T C 5 9 W M 7 15/07/03FT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON MONOLITHIC 2,097,152-W O RD SX4BAN KSX 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF 15/07/03FT-70 16-BITS 304-WORDSX4BANKSX8-BITS 608-WORDSX4BANKSX4-BITS TC59WM715FT 152-words TC59WM707FT TC59WM703FT TC59WM715 TC59WM71

    TC59WM715

    Abstract: No abstract text available
    Text: TOSHIBA TC59WM715/07/03FT-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-W O R D SX4B A N K SX16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-W ORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-W ORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF TC59WM715/07/03FT-70 SX16-BITS TC59WM715FT 152-words TC59WM707FT TC59WM703FT TC59WM715

    if8bd

    Abstract: if8b 400x875
    Text: TOSHIBA TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4 , 1 94 .3 0 4 -W O R D S X 4B A N K S X 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8 ,388,6 08-W O R D S X 4B A N K S X 8-B IT S DOUBLE DATA RATE FAST CYCLE RAM


    OCR Scan     		PDF TC59LM814/06CFT-50 16-BITS TC59LM814/06CFT TC59LM814CFT 304-words TC59LM806CFT TC59LM TC59LM 814/06CFT-50 if8bd if8b 400x875