Untitled
Abstract: No abstract text available
Text: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mΩ VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant
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BSZ0907ND
IEC61249-2-21
0907ND
B6D398
89456789ABC586
864C234C
3F4564%
3FC586
3BF34
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet PowerStage 3x3 BSZ0908ND Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mΩ VGS=4.5 V 25 13 20 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant
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BSZ0908ND
IEC61249-2-21
0908ND
B6D398
89456789ABC586
864C234C
3F4564%
3FC586
3BF34
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a1024 transistor
Abstract: transistor a1024 schema REGULATOR IC 7805 A1024* transistor ADC 0824 TL431 application note 7805 smd 7805 regulator uA723 IC 7805 pin diagram with working
Text: APPLICATION NOTE TDA8761 /TDA8762 / TDA8762A EVALUATION BOARD DOCUMENTATION AN/96025 Philips Semiconductors TDA8761/TDA8762/TDA8762A Application Note AN/96025 APPLICATION NOTE TDA8761 /TDA8762 / TDA8762A EVALUATION BOARD DOCUMENTATION Author s : Stéphane DESPROGES
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TDA8761
/TDA8762
TDA8762A
AN/96025
TDA8761/TDA8762/TDA8762A
a1024 transistor
transistor a1024
schema REGULATOR IC 7805
A1024* transistor
ADC 0824
TL431 application note
7805 smd
7805 regulator
uA723
IC 7805 pin diagram with working
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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automatic heat detector
Abstract: ON SEMICONDUCTOR 613 top marking 293 8C449 850nm photodiode pigtail
Text: PRODUCT INFORMATION 8C449 PIN/Preamp This device consists of a PIN photo diode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance ATM up to 155 Mbps. The preamplifier’s lin earity and absence of automatic gain
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850nm
8C449
1-800-96MITEL
automatic heat detector
ON SEMICONDUCTOR 613
top marking 293
8C449
850nm photodiode pigtail
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automatic heat detector
Abstract: ON SEMICONDUCTOR 613 top marking 293 8C447 1291 TO46 package LED 1300 nm
Text: PRODUCT INFORMATION 8C447 1300nm 1550nm PIN/Preamp Datacom, General Purpose, Analog Applications This device consists of a PIN photo diode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance FD DI and ATM up to 155 Mbps. The pre
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1300nm
1550rin
8C447
1-800-96MITEL
automatic heat detector
ON SEMICONDUCTOR 613
top marking 293
8C447
1291
TO46 package LED 1300 nm
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Diode dx 2A
Abstract: ON SEMICONDUCTOR 613 top marking 293 2B454
Text: PRODUCT INFORMATION VCSB_ Laser Diode T h is V e rtic a l C a v ity S u rfa c e Emitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It incorporates a photodiode to m onitor the optical power and allow for feedback control.
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840nm
1-800-96MITEL
Diode dx 2A
ON SEMICONDUCTOR 613
top marking 293
2B454
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General Semiconductor diode marking sma
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A444
Text: PRODUCT INFORMATION 840nm 1A444 VCSB_ Laser Diode T h is V e rtic a l C a v ity S u rfa c e Emitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It operates in multiple transverse and single longi tudinal mode, ensuring stable cou
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840nm
1A444
1-800-96MITEL
General Semiconductor diode marking sma
ON SEMICONDUCTOR 613
top marking 293
1A444
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automatic heat detector
Abstract: ON SEMICONDUCTOR 613 photodiode 1550nm nep top marking 293 8C443 TO46 package LED 1300 nm
Text: PRODUCT INFORMATION 1300nm 8C443 1550nm PIN/Preamp This device consists of a PIN photo diode and a transimpedance amplifier assembled in a TO-46 package. It is d e sig n e d fo r F D D I, ATM and SD H /Sonet up to 155 M bps. The AG C A u to m a tic G ain C o n tro l
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1300nm
1550nm
8C443
25xoseTempaaurei
1-800-96MITEL
automatic heat detector
ON SEMICONDUCTOR 613
photodiode 1550nm nep
top marking 293
8C443
TO46 package LED 1300 nm
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IR LED MITEL
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A229 S125
Text: PRODUCT INFORMATION 870nm 1A229 H igh-Ferfor mance LED This device operates at very low drive current, which makes it well suited for battery-operated equipment. In fact, it can be driven directly by TTL circuitry. Battery-Operated Equipment O p tical and B ectrical Characteristics
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870nm
1A229
1-800-96MITEL
IR LED MITEL
ON SEMICONDUCTOR 613
top marking 293
1A229
S125
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ON SEMICONDUCTOR 613
Abstract: top marking 293 1A225
Text: PRODUCT INFORMATION 1A225 H igh-Performance LED Com pared with lasers and ELEDs, this device can reduce device costs in single-mode Ethernet networks. And since it’s packaged in a hermeti-cally sealed can, it achieves high reliability even in h a rsh o p e ra tin g e n v iro n
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1A225
I0/I25
880te
1-800-96MITEL
ON SEMICONDUCTOR 613
top marking 293
1A225
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IR LED 810 nm
Abstract: w140 diode IR LED MITEL ON SEMICONDUCTOR 613 top marking 293 1A288 W140
Text: PRODUCT INFORMATION 840im 1A288 High-Performance LED This high speed device is optimized at 810 nm w avelength w hich is o f particular interest for use in radia tion-hardened fiber. It operates in a wide temperature range and delivers very high power to 200 pm core fiber,
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840nm
1A288
1-800-96MITEL
IR LED 810 nm
w140 diode
IR LED MITEL
ON SEMICONDUCTOR 613
top marking 293
1A288
W140
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ON SEMICONDUCTOR 613
Abstract: top marking 293 1A466
Text: PRODUCT INFORMATION 1A466 Datacom, General Purpose O p t ic a l a n d E le c t r ic a l C h a r a c t e r is t ic s 500 /p=30mA Note 1 700 |j W 50 deg (3 d B e l) /c 200 MHz Peak Wavelength XP 640 650 660 II o nm II Bandwidth Full W idth H alf M axim um I
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1A466
30mAte
1-800-96MITEL
ON SEMICONDUCTOR 613
top marking 293
1A466
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LED 1300 TO46 package
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A398
Text: PRODUCT INFORMATION The strictly defined 1300 nm wave length and high power is ideal for test equipment applications. It is packaged in a hermetically sealed can for high reliability and maximum resistance to harsh operating environm ents. The double-lens optical system results in
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1300nm
1A398
1-800-96MITEL
LED 1300 TO46 package
ON SEMICONDUCTOR 613
top marking 293
1A398
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13001H
Abstract: ON SEMICONDUCTOR 613 top marking 293
Text: PRODUCT INFORMATION 1300nm 1A436 H igh-Ferformance LED This device generates very high power which makes it ideal for many sensors and signal transmission applications. It operates in a wide range o f tem pera tures, and can satisfy virtually any envi
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5/125te
1-800-96MITEL
13001H
ON SEMICONDUCTOR 613
top marking 293
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RG4 DIODE
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A301 1A354
Text: PRODUCT INFORMATION 820nm 1A301 High-Performance LED T his device is d e sig n e d for F ibre Channel 266 Mbps applications and offers an excellent price/performance ratio for cost-effective solutions. Its double-lens optical system results in optimum coupling of power into the
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820nm
1A301
1A354
100mA
1-800-96MITEL
RG4 DIODE
ON SEMICONDUCTOR 613
top marking 293
1A301
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w140 diode
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A239 W140 R111H
Text: PRODUCT INFORMATION 840 nrn 1A239 H igh-Ferfor mance LED This device is designed for Ethernet and general applications and offers an excellent price/performance ratio for cost-effective solutions. Since it oper ates at low drive current, it generates m inim al h e a t — red u c in g co o lin g
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1A239
1-800-96MITEL
w140 diode
ON SEMICONDUCTOR 613
top marking 293
1A239
W140
R111H
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IR LED MITEL
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A354 1A388
Text: PRODUCT INFORMATION 1A388 High-Rerformance LH3 This device is designed for Ethernet 100 Mbps and Intra-Office Telecom applications and offers an excellent price/p erfo rm an ce ratio for costeffective solutions. Its double-lens optical system results in optim um
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1A388
1A354
1-800-96MITEL
IR LED MITEL
ON SEMICONDUCTOR 613
top marking 293
1A388
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ON SEMICONDUCTOR 613
Abstract: top marking 293 1A439 IR LED MITEL
Text: PRODUCT INFORMATION 1320nm 1A439 High-Performance LED This device is designed for FDDI and ATM 155 M bps a p p lic a tio n s and offers an excellent price/performance ratio for cost-effective solutions. Its double-lens optical system results in optimum coupling of power into the
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1320nm
1A439
1-800-96MITEL
ON SEMICONDUCTOR 613
top marking 293
1A439
IR LED MITEL
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marking ED SMA
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A255
Text: PRODUCT INFORMATION 860rm 1A255 H igh-Ferformance LED The low thermal droop of this device allows baseband video transmission with minimum distortion. The double-lens optical system provides for optimum coupling of power into the fiber. Baseband Video O p tica l and B e c trica l C h a ra cte ristics 25'cgbsTempsaiuiei
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860rm
1A255
5/l25jim
1-800-96MITEL
marking ED SMA
ON SEMICONDUCTOR 613
top marking 293
1A255
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IR LED MITEL
Abstract: ON SEMICONDUCTOR 613 Radial sma OPTICAL FIBER top marking 293 1A277A 5CV1
Text: PRODUCT INFORMATION 880nm 1A277A High-Performance LED The low harmonic distortion and low thermal droop makes this device ideal for subcarrier FM and baseband video applications. Video transmission can be accomplished with minimum dis tortion. The double-lens optical sys
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880nm
1A277A
100mA
1-800-96MITEL
IR LED MITEL
ON SEMICONDUCTOR 613
Radial sma OPTICAL FIBER
top marking 293
1A277A
5CV1
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IR LED MITEL
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A194
Text: P R O D U C T INFORMATION 1A194 High-Performance LED This device is designed for Ethernet and general applications and offers an excellent price/performance ratio for cost-effective solutions. Its doub le-len s op tical system resu lts in optimum coupling of power into the
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1A194
1-800-96MITEL
IR LED MITEL
ON SEMICONDUCTOR 613
top marking 293
1A194
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ON SEMICONDUCTOR 613
Abstract: top marking 293 1A353 1291
Text: PRODUCT INFORMATION 1320nm 1A353 Half-Duplex Communication High-Rerformance Duplex This single-chip device operates as both an E m itter and D etector, and transmits data over a single fiber in half-duplex m ode — thus reducing both fiber and component costs when
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1320nm
1A353
5/l25
1-800-96MITEL
ON SEMICONDUCTOR 613
top marking 293
1A353
1291
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IRF9670
Abstract: IRF9622 CTL04 DK QF DIODE dmosfet irf9620 IM621 359 AU IRF9623 IRF9523
Text: Data Sheet No. PD-9.351E in t e r n a t io n a l r e c t i f i e r HEXFET TRANSISTORS IRF962Q IRF96S1 P-CHANIMEL 200 VOLT POWER MOSFETs IRFS622 IRF9623 -200 Volt, 1.5 Ohm H E X FE T T0-220A B Plastic Package T h e H E X F E T * te ch n o lo gy la th e h e y to im em afconai R e c tifie rs
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O-220AB
IRF610
05BVOSS
C-359
IRF9620,
IRF9621,
IRF9622,
IRF9623
C-360
IRF9670
IRF9622
CTL04
DK QF DIODE
dmosfet
irf9620
IM621
359 AU
IRF9523
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