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    Untitled

    Abstract: No abstract text available
    Text: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mΩ VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant


    Original     		PDF BSZ0907ND IEC61249-2-21 0907ND B6D398 89456789ABC586 864C234C 3F4564% 3FC586 3BF34

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet PowerStage 3x3 BSZ0908ND Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mΩ VGS=4.5 V 25 13 20 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant


    Original     		PDF BSZ0908ND IEC61249-2-21 0908ND B6D398 89456789ABC586 864C234C 3F4564% 3FC586 3BF34