SR506 Diode
Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41
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SMD4001-4007)
SR560
DO-27
UF4004
DO-41
UF4007
10A10
LL4148
FR101-FR107
SR506 Diode
diode 6A 1000v
SM4007 Diode
Diode SR360
diode her307
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MBRD6U60CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K D L : IO=6A. ・Repetitive Peak Reverse Voltage B : VRRM=60V. H
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MBRD6U60CT
10ull
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MBRD6U60CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K L D : IO=6A. ・Repetitive Peak Reverse Voltage B : VRRM=60V. H
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MBRD6U60CT
Voltage150
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Untitled
Abstract: No abstract text available
Text: SBT150-06JS Ordering number : ENA1652 SANYO Semiconductors DATA SHEET SBT150-06JS Schottky Barrier Diode Twin Type • Cathode Common 60V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features
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SBT150-06JS
ENA1652
A1652-3/3
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1242B CPH6442 N-Channel Power MOSFET http://onsemi.com 60V, 6A, 43mΩ, Single CPH6 Features • • • Low ON-resistance 4V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage
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ENA1242B
CPH6442
PW10s,
900mm2
A1242-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1242B CPH6442 N-Channel Power MOSFET http://onsemi.com 60V, 6A, 43mΩ, Single CPH6 Features • • • Low ON-resistance 4V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage
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ENA1242B
CPH6442
900mm2Ã
A1242-7/7
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Untitled
Abstract: No abstract text available
Text: SBT150-06J Ordering number : ENN8352 SBT150-06J Schottky Barrier Diode Twin Type • Cathode Common 60V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Tj=150°C.
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SBT150-06J
ENN8352
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SBT150-06J
Abstract: SBT150
Text: SBT150-06J Ordering number : ENN8352 SBT150-06J Schottky Barrier Diode Twin Type • Cathode Common 60V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Tj=150°C.
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SBT150-06J
ENN8352
SBT150-06J
SBT150
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Untitled
Abstract: No abstract text available
Text: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Tj=125°C, typ Applications Features Low VF Optimized for 3.3V 5V output application
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YG803C06R
YG803C06
O-220F
500ns,
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YG803C06
Abstract: No abstract text available
Text: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection
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YG803C06R
O-220F
YG803C06
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YG803C06
Abstract: application FULL WAVE RECTIFIER diode full wave rectifier 6 v
Text: YG803C06 15A Schottky barrier diode (60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection
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YG803C06
O-220F
YG803C06
application FULL WAVE RECTIFIER
diode full wave rectifier 6 v
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n fet 60v 3a
Abstract: 30v N channel MOS FET N channel MOS FET P Channel Low Gate Charge 100A 60v 6a diode
Text: SSG4575 N Channel 6A, 60V,R DS ON 36mΩ P Channel -4.2A, - 60V,R DS(ON) 72mΩ Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 45 The SSG4575 provide the designer with the best combination of fast switching,
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SSG4575
SSG4575
27Typ.
01-Jun-2002
n fet 60v 3a
30v N channel MOS FET
N channel MOS FET
P Channel Low Gate Charge 100A
60v 6a diode
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GSS4575
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/06/06 REVISED DATE :2005/09/29B N-CH BVDSS 60V N-CH RDS ON 36m N-CH ID 6A P-CH BVDSS -60V N-CH RDS(ON) 72m N-CH ID -4.2A GSS4575 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4575 provide the designer with the best combination of fast switching, ruggedized device design, low
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2005/09/29B
GSS4575
GSS4575
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Untitled
Abstract: No abstract text available
Text: AP4575GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low On-resistance RDS ON 36mΩ ID P-CH BVDSS RDS(ON) ID 6A -60V 72mΩ -4.2A D1 D1 ▼ Fast Switching Performance
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AP4575GM-HF
100us
100ms
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Untitled
Abstract: No abstract text available
Text: SSM4575M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-Ch D2 BV D2 Low on-resistance D1 D1 Fast switching performance SO-8 S1 G1 Description G2 S2 60V DSS R DS ON 36mΩ ID 6A -60V 72mΩ -4.2A P-Ch BV DSS RDS(ON)
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SSM4575M
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9973
Abstract: No abstract text available
Text: Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN9973J3 BVDSS ID RDSON 60V 14A 80mΩ Features • VDS=60V RDS ON =80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=4.5V, ID=6A
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C418J3
MTN9973J3
O-252
UL94V-0
9973
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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APF30324
Abstract: APF30205 APF30224 APF30212 DC-217 IEC 60947-5-1 APF3024H apf30312 APF10205 APF10206
Text: PF APF VDE Compliant with European standards 1a/1c 6A Slim power relays Compliance with RoHS Directive PF RELAYS (APF) FEATURES TYPICAL APPLICATIONS 1. High density mounting with 5 mm .197 inch width Space saved with 5 mm .197 inch slim type with 28 mm 1.102 inch length.
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Untitled
Abstract: No abstract text available
Text: PF APF VDE Compliant with European standards 1a/1c 6A Slim power relays RoHS compliant PF RELAYS (APF) FEATURES TYPICAL APPLICATIONS 1. High density mounting with 5 mm .197 inch width Space saved with 5 mm .197 inch slim type with 28 mm 1.102 inch length.
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ASCTB205E
201202-T
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 11EQS05 11EQS06 1.1A/50~60V FEATURES • Miniature Size MAX 'DIA 2.7 .106 , < ± ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.60(.024) d ia 0.54C021) ° High Surge Capability ° 20 Volts thru 100 Volts Types Available
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11EQS05
11EQS06
54C021)
GDD17b2
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21DQ05
Abstract: 21DQ06 CVM60 t22.80
Text: SCHOTTKY BARRIER DIODE 21DQ05 21DQ06 1.9A/50— 60V FEATURES • Miniature Size • Low Forward Voltage Drop • Low Power L o s s , High Efficiency • High Surge Capability »20 Volts thru 100 Volts Types Available • 52mm Inside Tape Spacing Package Available
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21DQ05
21DQ06
7C027)
21DQ05
C2IDQ06)
Voltw-20mVrm.
100kHz
bbl5123
21DQ06
CVM60
t22.80
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE EC10QS05 EC10QS06 1.1A/50— 60V FEA TURES oMiniature Size, Surface Mount Device ° Low Forward Voltage Drop » Low Power Loss, High Efficiency ° High Surge Capability » 20 Volts thru 100 Volts Types Available °Packaged in 12mm Tape and Reel
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A/50--
EC10QS05
EC10QS06
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 11EQS05 11EQS06 1.1A/50— 60V FEATURES ° Miniature Size .1061 M AX ° Low Forward Voltage Drop DIA 0 Low Power Loss, High Efficiency 0 High Surge Capability o 20 Volts thru 100 Volts Types Available ° 26mm and 52mm Inside Tape Spacing
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A/50--
11EQS05
11EQS06
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DIODE j5.m
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 4VQ05CT 4VQ06CT 4VQ05CTF 4VQ06CTF 4 .4 A /5 0 — 60V FEATURES ° TO-251AA Case 71 .264' 4l.25'2 '" 5 vQi 2 1 1 1 2 :;* m a \ i.n94> 2 3 S MAX i H 4t 12:1.00) M AX n 7 °TO-252AA Case, Surface Mount Device 6 2 2 I.24Ò) rt.i>{.035l
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O-251AA
O-252AA
4VQ05CT
4VQ06CT
4VQ05CTF
4VQ06CTF
T0-251AA
DIODE j5.m
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