diode 1500V
Abstract: diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V
Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications
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ERE41-15
diode 1500V
diode marking H2
mark h2 diode
fast recovery diode 1500V
diode marking e41
diode 3A 1500V
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diode marking e41
Abstract: E41-15 diode 3A 1500V 1500V 3A diode
Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications
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ERE41-15
diode marking e41
E41-15
diode 3A 1500V
1500V 3A diode
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diode marking e41
Abstract: diode 3A 1500V e41.15 ERE41-15 1500V 3A diode
Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications
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ERE41-15
diode marking e41
diode 3A 1500V
e41.15
ERE41-15
1500V 3A diode
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GT 6 N 170
Abstract: i2t graph TFD312S
Text: TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series • Features External Dimensions A 0.8±0.2 0.3 16.9± ●Gate trigger current: IGT=10mA max 8.4±0.2 0.2 4.0± ●Average on-state current: IT AV =3A 4.2±0.2 C 0.5 2.8 10.0±0.2 φ 3.3±0.2
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O-220F
TFD312S
GT 6 N 170
i2t graph
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings
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IXTJ6N150
O-247TM
E153432
100ms
6N150
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IXTJ6N150
Abstract: No abstract text available
Text: IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTJ6N150
O-247TM
E153432
100ms
6N150
IXTJ6N150
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Untitled
Abstract: No abstract text available
Text: TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series • Features External Dimensions Unit: mm ●Gate trigger current: IGT=10mA max 13.0 min ●Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.) ±0.2 4.2 C 0.5 2.8 ±0.2 φ ±0.2 3.3 A 0.2
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O-220F
TFD312S
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IR 92 0151
Abstract: DMV1500M DMV1500M7 DMV1500M7F5 DMV1500 diode IR 132 E 25
Text: DMV1500M7 DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 700 V 1500 V trr (max) 55 ns 135 ns VF (max) 1.55 V 1.65 V 1 2 3 uc 1 d o r 700V Modulation diode Full kit in one package High breakdown voltage capability
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DMV1500M7
IR 92 0151
DMV1500M
DMV1500M7
DMV1500M7F5
DMV1500
diode IR 132 E 25
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IXTH3N150
Abstract: No abstract text available
Text: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on 1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M
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IXTH3N150
O-247
100ms
3N150
0-26-10-A
IXTH3N150
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IXTH3N150
Abstract: No abstract text available
Text: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH3N150
O-247
100ms
3N150
0-26-10-A
IXTH3N150
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IXTH3N150
Abstract: No abstract text available
Text: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH3N150
O-247
100ms
3N150
0-26-10-A
IXTH3N150
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IXTH3N150
Abstract: 3N150 T3N1 Vdss 1500V
Text: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH3N150
O-247
100ms
3N150
0-26-10-A
IXTH3N150
T3N1
Vdss 1500V
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IR 92 0151
Abstract: DMV1500M DMV1500MF5
Text: DMV1500M DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V trr (max) 50 ns 135 ns VF (max) 1.4 V 1.65 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
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DMV1500M
O-220AB
IR 92 0151
DMV1500M
DMV1500MF5
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DMV1500H
Abstract: DMV1500HF5
Text: DMV1500H DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V trr (max) 50 ns 125 ns VF (max) 1.4 V 1.7 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
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DMV1500H
O-220AB
DMV1500H
DMV1500HF5
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IR 92 0151
Abstract: DMV1500L DMV1500LF5
Text: DMV1500L DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 4A VRRM 600 V 1500 V trr (max) 50 ns 170 ns VF (max) 1.4 V 1.5 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
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DMV1500L
O-220AB
IR 92 0151
DMV1500L
DMV1500LF5
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IR 92 0151
Abstract: DMV1500M DMV1500MF5 damper
Text: DMV1500M DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V Trr (max) 50 ns 135 ns VF (max) 1.4 V 1.65 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
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DMV1500M
O-220AB
IR 92 0151
DMV1500M
DMV1500MF5
damper
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IR 92 0151
Abstract: DMV1500H DMV1500HF5
Text: DMV1500H DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V Trr (max) 50 ns 125 ns VF (max) 1.4 V 1.7 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
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DMV1500H
O-220AB
IR 92 0151
DMV1500H
DMV1500HF5
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Untitled
Abstract: No abstract text available
Text: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor
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NTE2679
O220F
100mA,
750mA,
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Untitled
Abstract: No abstract text available
Text: High Voltage Power MOSFETs VDSS ID25 IXTT6N150 IXTH6N150 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTT6N150
IXTH6N150
O-268
6N150
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IXTH6N150
Abstract: 6n150
Text: Advance Technical Information IXTH6N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 6A 3.5Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH6N150
O-247
6N150
IXTH6N150
6n150
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IXTT6N150
Abstract: No abstract text available
Text: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTT6N150
IXTH6N150
O-268
O-247
6N150
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR
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IXTT6N150
IXTH6N150
O-268
O-247
6N150
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2SD1554
Abstract: 2sd1554 equivalent TOSHIBA DIODE GLASS MOLD 00l3
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1554 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm FEATURES: . High Voltage l&5±0t5 >3.6±aS : VCBO=1500V S.0±0l3 . Low Saturation Voltage: VcE sat =5V(Typ.)(Ic=3A,Ib =0.8A) . High Speed : tf = 1. 0|is(Max.) (I(;p=3A, lBl(end)=0.8A)
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2SD1554
200mA,
2SD1554
2sd1554 equivalent
TOSHIBA DIODE GLASS MOLD
00l3
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2SD869 TOSHIBA
Abstract: 2SD869
Text: 2SD869 SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0Z5.OW.X. FEATURES: 021.OUAX • High Voltage : VCBq =1500V • Low Saturation Voltage : VCE sat =5v (TyP-) +0.09 jZL0— 0.03 (Ic=3A, Ib =0.8A)
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2SD869
2SD869 TOSHIBA
2SD869
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