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    IXTH3N150 Search Results

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    IXTH3N150 Price and Stock

    Littelfuse Inc IXTH3N150

    MOSFET N-CH 1500V 3A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH3N150 Tube 232 1
    • 1 $9.01
    • 10 $9.01
    • 100 $7.59333
    • 1000 $7.59333
    • 10000 $7.59333
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    Newark IXTH3N150 Bulk 300
    • 1 -
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    • 100 -
    • 1000 $7.96
    • 10000 $7.96
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    IXYS Corporation IXTH3N150

    MOSFETs High Voltage Power MOSFET
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    Mouser Electronics IXTH3N150 168
    • 1 $9.01
    • 10 $9.01
    • 100 $7.59
    • 1000 $7.59
    • 10000 $7.59
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    Future Electronics IXTH3N150 Tube 24 Weeks 30
    • 1 -
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    • 100 $8.9
    • 1000 $8.9
    • 10000 $8.9
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    TTI IXTH3N150 Tube 300
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    • 100 -
    • 1000 $7.69
    • 10000 $7.69
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    TME IXTH3N150 1
    • 1 $13.18
    • 10 $10.42
    • 100 $9.36
    • 1000 $9.36
    • 10000 $9.36
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    IXYS Integrated Circuits Division IXTH3N150

    MOSFET DIS.3A 1500V N-CH TO247-3 H.VOLTAGE THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTH3N150
    • 1 $14.06665
    • 10 $14.06665
    • 100 $13.1464
    • 1000 $13.1464
    • 10000 $13.1464
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    IXTH3N150 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH3N150 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 3A TO-247 Original PDF

    IXTH3N150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTH3N150

    Abstract: No abstract text available
    Text: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150

    IXTH3N150

    Abstract: No abstract text available
    Text: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on  1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150

    IXTH3N150

    Abstract: 3N150 T3N1 Vdss 1500V
    Text: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150 T3N1 Vdss 1500V

    IXTH3N150

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150