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IXYS Corporation IXTH3N150 MOSFETs High Voltage Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTH3N150		168			1 $9.06 10 $9.06 100 $7.59 1000 $7.59 10000 $7.59	Buy Now
Future Electronics	IXTH3N150	Tube		24 Weeks	30	1 - 10 - 100 $8.9 1000 $8.9 10000 $8.9	Buy Now
TTI	IXTH3N150	Tube			300	1 - 10 - 100 - 1000 $7.69 10000 $7.69	Buy Now
TME	IXTH3N150				1	1 $13.82 10 $10.92 100 $9.82 1000 $9.82 10000 $9.82	Get Quote
Littelfuse Inc IXTH3N150 Discmosfet N-Ch Std-Hivoltage To-247Ad/ Tube \|Littelfuse IXTH3N150
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTH3N150	Bulk			300	1 - 10 - 100 - 1000 $7.96 10000 $7.96	Buy Now

IXTH3N150 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTH3N150		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 3A TO-247		Original	PDF

IXTH3N150 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXTH3N150 Abstract: No abstract text available Text: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150
IXTH3N150 Abstract: No abstract text available Text: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on  1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M	Original	PDF	IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150
IXTH3N150 Abstract: 3N150 T3N1 Vdss 1500V Text: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150 T3N1 Vdss 1500V
IXTH3N150 Abstract: No abstract text available Text: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150