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    DIODE 2N5401 Search Results

    DIODE 2N5401 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 2N5401 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 2SB618

    Abstract: 3A/fllnm 80
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


    Original     		2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80 PDF

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P PDF

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor PDF

    Diode Motorola 711 2N2905A

    Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


    Original     		MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MV2103 Diode Motorola 711 2N2905A pin configuration transistor BC547 2N2222 BC237 2N555 PDF

    MAD130P

    Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


    Original     		MMAD1108 De218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MAD130P 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72 PDF

    diode in 5401

    Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
    Text: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages


    OCR Scan     		TIED87, TIED88, X10-3 poss75042 SJ4IIL230) JL3110209) 0L19O) diode in 5401 for APD bias high-voltage 104 Ceramic Disc Capacitors 100v PDF

    Untitled

    Abstract: No abstract text available
    Text: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEA TU R ES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages


    OCR Scan     		TIED87, TIED88, 000D524 PDF

    adpv

    Abstract: Texas Optoelectronics kt 714 TIED87 diode as1 led and photodiode pair 2N5401 TIED88 TIED89 X10-3
    Text: TEXAS OPTOELECTRONICS INC IDE 1 | 8 ^ 3 1 3 4 0000121 1 | iroi T "/ / -£ -3 TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. FEATURES DESCRIPTION These diode pairs consist of an avalanche photodiode APD) and a small reference diode


    OCR Scan     		TIED87, TIED88, 2N5401 2N5401 O-VW-41 TIED89 adpv Texas Optoelectronics kt 714 TIED87 diode as1 led and photodiode pair TIED88 TIED89 X10-3 PDF

    bc 7-25 pnp

    Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
    Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K


    OCR Scan     		1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor PDF

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA PDF

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 PDF

    marking dp sot363

    Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 marking dp sot363 BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 bf245 equivalent marking code a5 sot363 PDF

    2N301

    Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N301 BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent PDF

    BC237

    Abstract: sot23 transistor marking JY
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel


    Original     		BAV199LT1 BAV199LT3 inch/10 BAV199LT1 236AB) S218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 sot23 transistor marking JY PDF

    BC237

    Abstract: TRANSISTOR bc177b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel


    Original     		BAW156LT1 BAW156LT3 inch/10 BAW156LT1 236AB) Junc218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 TRANSISTOR bc177b PDF

    BC237

    Abstract: marking code N9 8-pin
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode DAN222 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90


    Original     		416/SC DAN222 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 marking code N9 8-pin PDF

    BC237

    Abstract: 2n2222a SOT223 5161 common anode
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for


    Original     		OT-223 MV7005T1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2n2222a SOT223 5161 common anode PDF

    BC237

    Abstract: DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package


    Original     		M1MA141/2WKT1 inch/3000 M1MA141/2WKT3 inch/10 M1MA141WKT1 M1MA142WKT1 70/SOT M1218A MSC1621T1 BC237 DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt PDF

    MV104 "direct replacement"

    Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.


    Original     		MV104) MV104 226AA) Curren218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV104 "direct replacement" 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION PDF

    bc 7-25 pnp

    Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
    Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30


    OCR Scan     		1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola Preferred Device ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge)


    Original     		BAV70LT1 236AB) Uni218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 PDF

    BC237

    Abstract: application notes BF245A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Anode ANODE 3 BAW56LT1 Motorola Preferred Device CATHODE 1 2 CATHODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge)


    Original     		BAW56LT1 236AB) Un218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 application notes BF245A PDF

    diode l 0607

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


    Original     		M1MA141/2KT1 inch/3000 M1MA141/2KT3 inch/10 M1MA141KT1 M1MA142KT1 70/SOT M1MA142KT1 MSC1621T1 diode l 0607 BC237 PDF

    BC237

    Abstract: 16 pin dip with heat sink
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which


    Original     		M1MA141/2WAT1 inch/3000 M1MA141/2WAT3 inch/10 M1MA141WAT1 M1MA142WAT1 70/SOT M1MA142WAT218A MSC1621T1 BC237 16 pin dip with heat sink PDF