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    2N643 Price and Stock

    Solid State Inc 2N6430

    TRANS NPN 200V 0.05A TO18
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    Solid State Inc 2N6431

    TRANS NPN 300V 0.05A TO18
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    Microchip Technology Inc 2N6436

    PNP TRANSISTOR
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    Microchip Technology Inc 2N6438

    PNP TRANSISTOR
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    Microchip Technology Inc 2N6438 1
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    Microchip Technology Inc 2N6437

    TRANS PNP 100V 25A TO3
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    2N643 Datasheets (150)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N643 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N643 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N643 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N643 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N643 Unknown GE Transistor Specifications Scan PDF
    2N643 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N643 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N643 Unknown Vintage Transistor Datasheets Scan PDF
    2N643 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N643 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N643 RCA RCA Transistor and Diode Data Scan PDF
    2N6430 Central Semiconductor Complementary Silicon Transistor Original PDF
    2N6430 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan PDF
    2N6430 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N6430 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6430 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6430 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6430 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6430 New England Semiconductor SMALL SIGNAL NPN TRANSISTOR TO-18 Scan PDF
    2N6430 PBFREE Central Semiconductor THROUGH-HOLE TRANSISTOR-SMALL SI Original PDF
    ...

    2N643 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6437

    Abstract: 2N6339 2N6341 2N6438
    Text: ON Semiconductort 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —


    Original
    PDF 2N6437 2N6438 2N6339 2N6341 204AA r14525 2N6437/D 2N6437 2N6341 2N6438

    2N6339

    Abstract: 2N6340 2N6338 2N6341 2N6436
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier


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    PDF 2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6339 2N6340 2N6341

    Untitled

    Abstract: No abstract text available
    Text: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON TRANSISTORS 2N6430, 6431 TO-18 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original
    PDF 2N6430, 2N6430 2N6431 C-120 31Rev300701

    2N6439

    Abstract: 2n6439 TRANSISTOR
    Text: 2N6439 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range. FEATURES INCLUDE: • Internal Input Matching Network • 30:1 Load VSWR Capability


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    PDF 2N6439 2N6439 2n6439 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2N6438+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


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    PDF 2N6438 Freq40M time300n

    TIP360

    Abstract: b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 A, BLX84 2SB1079 B07460 B07460 RCA91160 B0750A B0750A B0751A B0751A B0750C ~g;~~g 15 20 B0751C MJ15004 RCA9116C 2SC2820 SSP72 TIP36 B0250 SSP72A ~~~~~A 25 30 2N5883 SSP72B B0250B TIP36B 2N5884 2N6436


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    PDF 2N5683 2N5684 2N6377 2N6380 2N6061 2N6063 2N6378 2N6381 2N6379 2N6382 TIP360 b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904

    MRF648

    Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
    Text: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137


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    PDF 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MRF648 TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422

    Untitled

    Abstract: No abstract text available
    Text: 2N6430 2N6431 2N6432 2N6433 NPN PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6430 series devices are complementary small signal silicon transistors manufactured by the epitaxial planar


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    PDF 2N6430 2N6431 2N6432 2N6433 2N6430 2N6432 100MHz

    Untitled

    Abstract: No abstract text available
    Text: 2N6437+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


    Original
    PDF 2N6437 Freq40M time300n

    Untitled

    Abstract: No abstract text available
    Text: ^E.m.i-Condu.cko'i ^Pioaacti., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the


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    PDF 2N6439 1000pF

    ferroxcube 56-590-65

    Abstract: UT25 coaxial 2N6439 UT25 VK200
    Text: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


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    PDF 2N6439/D 2N6439 ferroxcube 56-590-65 UT25 coaxial 2N6439 UT25 VK200

    2n6436

    Abstract: 2N6438
    Text: 2N6436 2N6437 2N6438 MECHANICAL DATA Dimensions in mm inches HIGH POWER PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. DESCRIPTION 5.08 (0.200)


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    PDF 2N6436 2N6437 2N6438 2N6438

    2N6436

    Abstract: 2N6437 2N6438
    Text: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)


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    PDF 2N6436 2N6437 2N6438 O-204AA) 2N6436= 2N6436 2N6437 2N6438

    Untitled

    Abstract: No abstract text available
    Text: 2N643 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)29â V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)71õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)7.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.45Â


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    PDF 2N643 Freq20M

    2N6431

    Abstract: 2N6430
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON TRANSISTORS 2N6430, 6431 TO-18 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise SYMBOL DESCRIPTION VCEO


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    PDF ISO/TS16949 2N6430, 2N6430 2N6431 C-120 2N6430 31Rev300701 2N6431

    2N6436

    Abstract: 2N6437 2N6438 2N6338 2N6341
    Text: SavantIC Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6338~2N6341 APPLICATIONS


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    PDF 2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N6438 2N6341

    High voltage fast switching power transistor pnp

    Abstract: 2N6438 2n6437
    Text: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N6438* High-Pow er PNP Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining Voltage —


    OCR Scan
    PDF 2N6437/D 2N6437 2N6438 2N6339 2N6341 High voltage fast switching power transistor pnp 2N6438 2n6437

    2N6432

    Abstract: 2N6432 MOTOROLA 2N6433
    Text: MOTORGLA SC XSTRS/R F 1EE 0 I b3b725M üOñbMSa T | r ^ 7-j3 2N6432 2N6433 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Symbol 2N6432 2N6433 U nit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 200 300 Vdc Emitter-Base Voltage


    OCR Scan
    PDF b3b725M 2N6432 2N6433 O-206AA) 2N6433 2N3743 2N6432 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N 6438* High-Power PNP Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry power am plifier and sw itching circuit applications. • • • • • High C ollector-Em itter Sustaining Voltage —


    OCR Scan
    PDF 2N6437/D 2N6437 2N6438 2N6339 2N6341 2N6437 O-204AA

    n643

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2 N 6 4 36 2 N 6437 2N6438* H igh-Pow er PNP Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry pow er am plifier and sw itching circuit applications. • • • •


    OCR Scan
    PDF 2N6436/D 2N6436 2N6437 2N6438 2N6338 2N6341 2N6438* O-204AA n643

    BUT36

    Abstract: BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98 2N5883 2N5884 2N5885
    Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching h lcCont VcEO (sus) Amps Max Volts Min 24 1000 25 60 2N5885 2N5883 80 2N5886 2N5884 2N6436 100 2N6338 120 2N6339 125 BUV10 BUX10 28 30 50 @ lc MHZ Watts


    OCR Scan
    PDF BUT36 2N5885 2N5883 2N5886 2N5884 2N6436 2N6338 2N6437 2N6339 2N6438 BUT36 BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98

    2N6439

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


    OCR Scan
    PDF 2N6439/D 2N6439 2N6439

    2N6432

    Abstract: 2N5183 2N6430 2N6431 2N6433 BC110 BC393 BC394 BC477 BCX22
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION 2NS183 NPN AMPUSW ITCH 2N6430 NPN HIGH VOLTAGE 2N6431 NPN HIGH VOLTAGE BVCBO BVCEO bvebo ICBO (V) on (V) (HA) MIN MIN MIN MAX *ICES *ICEV 18 18 7.0 0.5 200 200 6.0 300 300 6.0 @ lc h FE


    OCR Scan
    PDF 2N5183 2N6430 2N6431 2N6432 2N6433 BC110 BSX49 bsx79 BSY18 bsy62 BC393 BC394 BC477 BCX22

    2N6439

    Abstract: UT25 coaxial VK200 ferrite choke
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


    OCR Scan
    PDF 2N6439 Collector-B400 2N6439 UT25 coaxial VK200 ferrite choke