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    DIRECTED Datasheets (122)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    101N09 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    101N30 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    102N02 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    102N05 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    102N10 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    102N20 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    201N09 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    201N25 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    301N35 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    501N04 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    501N16 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    501N21 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    501N40 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    DE-150 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    DE-150-101N09 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-150-101N09-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE150-101N09-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE150-101N09A Directed Energy RF Power MOSFET Original PDF
    DE150-102N02-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE150-102N02A Directed Energy RF Power MOSFET Original PDF
    ...

    DIRECTED Datasheets Context Search

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    nec 2401

    Abstract: 400P DE375-102N10A Directed Energy
    Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF DE375-102N10A nec 2401 400P DE375-102N10A Directed Energy

    QFN-20

    Abstract: SKY13264-340LF
    Text: PRELIMINARY DATA SHEET SKY13264-340LF: 4 x 2 Switch Matrix 250 MHz–2.15 GHz Features Four inputs, two outputs ● Any input can be directed to either output ● Only four control lines required ● High interport isolation: 40 dB typ. up to 0.95 GHz ● Miniature QFN-20 4 x 4 mm package


    Original     		PDF SKY13264-340LF: QFN-20 J-STD-020 SKY13264-340LF

    DE275X2-102N06A

    Abstract: 102N06 DE275X2 102N06A 400P DE-27
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in


    Original     		PDF DE275X2-102N06A DE275X2-102N06A 102N06 DE275X2 102N06A 400P DE-27

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SKY13272-340LF: 4 x 2 Switch Matrix 250 MHz–2.15 GHz Features Four inputs, two outputs Any input can be directed to either output ● Only four control lines required ● High interport isolation: 40 dB typ. up to 0.95 GHz ● Miniature QFN-20 4 x 4 mm package


    Original     		PDF SKY13272-340LF: QFN-20 J-STD-020 SKY13272-340LF

    charging ic

    Abstract: charging i.c BH3890FV
    Text: 99W063A Charging control driver IC for Portable telephone BH3890FV Dimension Description Units : mm The BH3890FV is a charging IC developed for a lithium ion battery (1 cell). Back-up charging circuit and charging current monitor circuit are included. This IC is directed by a micro computer controller.


    Original     		PDF 99W063A BH3890FV BH3890FV 20dBV, 100Hz, 30dBV, 100mA charging ic charging i.c

    MPC821

    Abstract: No abstract text available
    Text: SECTION 19 DEVELOPMENT SUPPORT Emulators require a level of control and observation that are in sharp contrast to the trend of modern microcomputers and microprocessors in which many bus cycles are directed to internal resources and are not externally visible. The same is true for bus analyzers. To


    Original     		PDF MPC821. MPC821 0x2002000. 32-bit

    MPC555

    Abstract: No abstract text available
    Text: SECTION 21 DEVELOPMENT SUPPORT 21.1 Overview The visibility and controllability requirements of emulators and bus analyzers are in opposition to the trend of modern microcomputers and microprocessors where many bus cycles are directed to internal resources and are not visible externally.


    Original     		PDF 32-bit MPC555 MPC555

    DE275X2-501N16A

    Abstract: No abstract text available
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in


    Original     		PDF DE275X2-501N16A DE275X2-501N16A

    102N12

    Abstract: Directed Energy Directed 400P DE375-102N12A
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE375-102N12A 50MHz 102N12 Directed Energy Directed 400P DE375-102N12A

    14KESD170CA

    Abstract: DO-204AL DO-213AB
    Text: 14KESD5.0 thru 14KESD170CA AXIAL-LEAD TVS SCOTTSDALE DIVISION APPEARANCE These small axial-leaded TVS devices feature the ability to clamp dangerous high voltage, short-term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive


    Original     		PDF 14KESD5 14KESD170CA DO-41 DO-204AL) 14KESD170CA DO-204AL DO-213AB

    Untitled

    Abstract: No abstract text available
    Text: ADNS-7100-001 Trim Lens Data Sheet Description The ADNS-7100-001 laser mouse trim lens is designed for use with Avago Technologies ADNS-7630 one chip Bluetooth LaserStreamTM sensors. Together with the VCSEL, the ADNS-7100-001 trim lens provides the directed illumination and optical imaging necessary for


    Original     		PDF ADNS-7100-001 ADNS-7100-001 ADNS-7630

    "Brushless DC Motor"

    Abstract: 60NF06 motor Speed Sensor circuit diagram 5V power supply using bridge circuit using 7805 speed control of dc motor using pwm circuit diagram three phase BLDC motor mosfet driver circuits 9v dc motor 36v brushless dc motor 5V power supply using bridge circuit using 7805 d 3 phase DC motor speed control circuit
    Text: Using the HT45RM03 and HT45B0C to Control a 3-phase Brushless DC Motor Using the HT45RM03 and HT45B0C to Control a 3-phase Brushless DC Motor D/N: HA0117E Introduction The important application for this example is directed towards 3-phase Brushless DC motors. These motors have internal positioning sensors. The operating voltage is 36V DC


    Original     		PDF HT45RM03 HT45B0C HA0117E "Brushless DC Motor" 60NF06 motor Speed Sensor circuit diagram 5V power supply using bridge circuit using 7805 speed control of dc motor using pwm circuit diagram three phase BLDC motor mosfet driver circuits 9v dc motor 36v brushless dc motor 5V power supply using bridge circuit using 7805 d 3 phase DC motor speed control circuit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SKY13272-340LF: 4 x 2 Switch Matrix 250 MHz–2.15 GHz Features Four inputs, two outputs Any input can be directed to either output ● Only four control lines required ● High interport isolation: 40 dB typ. up to 0.95 GHz ● Miniature QFN-20 4 x 4 mm package


    Original     		PDF SKY13272-340LF: QFN-20 J-STD-020 SKY13272-340LF

    DE375-102N10A

    Abstract: No abstract text available
    Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original     		PDF DE375-102N10A DE375-102N10A

    HT81003

    Abstract: HT81006 HT81009 HT81012 HT81018 HT81R03 HT81R36 HT81XXX IC 74150 pin diagram
    Text: HT81XXX EasyVoiceTM Speech Features • Operating voltage: 2.4V~5V · FLAG2 options · Directly drives an external transistor - 3Hz flash 6Hz flash Busy output OFF · 6 keys Directed · PWM function directly driver speaker · Low standby current (1mA typ. for VDD=3V)


    Original     		PDF HT81XXX 100kW, 200kW HT81003 HT81006 HT81009 HT81012 HT81018 HT81R03 HT81R36 HT81XXX IC 74150 pin diagram

    TI16L8-15

    Abstract: ti16l8 CMD27 TI16L815 1301P SBD21 TI16L8-1 SBD15 ti16l8- D1143
    Text: Revision A TEXAS INSTRUMENTS Semiconductor Group TNETA1560/TNETA1500 Sbus Reference Schematic Notebook Physical Interface SONET 155 Mbps, Mutimode fiber Connector Revision A July 12, 1995 Questions may be directed to: TNETA TECHNICAL SUPPORT LINE *4ATM@ti.com


    Original     		PDF TNETA1560/TNETA1500 TNETA1560 TNETA1500 44MHz ZATM155 74LS123 TI16L8-15 ti16l8 CMD27 TI16L815 1301P SBD21 TI16L8-1 SBD15 ti16l8- D1143

    Untitled

    Abstract: No abstract text available
    Text: PROFESSIONAL QUALITY, HIGH DENSITY SUBMINIATURE-D CONNECTORS WIN-DD Series FOR INDOOR/OUTDOOR NONHAZARDOUS ENVIRONMENTAL APPLICATIONS WHERE PROTECTION FROM DUST, RAIN, HOSE DIRECTED WATER AND LIMITED WATER IMMERSION IS REQUIRED C O N T A C T V A R IA N T S


    OCR Scan     		PDF T005336

    2111N

    Abstract: ULN-2113A "product detector" 2113A ULN-2111 9845A ULN-2110A ULN2110 radar detector detector SPRAGUE SEMICONDUCTOR
    Text: SP RAGUE Sprague Electric's Semiconductor Division has taken the advan­ tages of Sprague-pioneered ion-implantation and directed them toward the design and manufacture of consumer entertainment products. With 'state-of-the-art' design and process capability,


    OCR Scan     		PDF 14-pin) -9HI43 2111N ULN-2113A "product detector" 2113A ULN-2111 9845A ULN-2110A ULN2110 radar detector detector SPRAGUE SEMICONDUCTOR

    sfc2741c

    Abstract: SFC2741 sn72741 SF.C2741C SN72741L SN55471 SFC2741DC ULN-2113A SG3821N LM1307N
    Text: SPRAGUE Sprague Electric's Semiconductor Division has taken the advan­ tages of Sprague-pioneered ion-implantation and directed them toward the design and manufacture of consumer entertainment products. With 'state-of-the-art' design and process capability,


    OCR Scan     		PDF ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M T2741WV ULN2151D sn72741 SF.C2741C SN72741L SN55471 SFC2741DC ULN-2113A SG3821N LM1307N

    HE1302

    Abstract: No abstract text available
    Text: 1ÛE HE1302ML D • MMU205 0010=102 3 InGaAsP IRED HITACHI/ OPTOELECTRONICS Description r-v-iá HE1302M L is a high-power 1.3 ftm InGaAsP infrared emitting diode with double heterojunction structure, which provides high speed response. Optical output from the chip is directed to the


    OCR Scan     		PDF HE1302ML HE1302M MMU205 HE1302

    Untitled

    Abstract: No abstract text available
    Text: Standard ICs 6-channel high current driver BA664 The BA664 is an 1C with a built-in clamp diode, developed for the purpose of minimizing attachments, and contains a Darlington transistor array of six circuits with input resistance. Input and output are directed in the same direction


    OCR Scan     		PDF BA664 BA664 100mA

    k 2645 MOSFET

    Abstract: CD 4511 data sheet Directed Energy DE-150 "free energy" circuit k 2645
    Text: ?F i4 9 9 9 S D IR E C T E D EN ERGY IN C ~ 97D DIRECTED ENERGY INC 0 0 0 14 T? D EÖ4cm s 0Q0DD14 S f DE-150 SERIES □ DATA SHEET DIRECTED ENERGY. INC. ^ DE-150 45IP02 SPECIFICATIONS % PULSID POWER COMPONtNTS AND SVSTfMS The Centre or Advanced Technology


    OCR Scan     		PDF 00DDD14 DE-150 45IP02 -450V, 00A/p> k 2645 MOSFET CD 4511 data sheet Directed Energy "free energy" circuit k 2645

    vdgr test circuit

    Abstract: MOSFET 2301 oss 200-20 vdr 275 DE-275
    Text: - ^ ' • » n ^ c - r ' T n r n r r n c m c p T î v i m p / . . . Q 7 n f i n n O T r , ÎTliTafl^ ^ s D IR EC TE! ENERGY INC t - i ~ _ » Q0ÜDÜ27 =■ DE-275 SERIES □ DATA ante i DIRECTED ENERGY, IN C -, > ■ ^ DE-275 20IP11


    OCR Scan     		PDF DE-275 20IP11 vdgr test circuit MOSFET 2301 oss 200-20 vdr 275

    mospower applications handbook

    Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
    Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101


    OCR Scan     		PDF 00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics