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    DBX3 Search Results

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    DBX3 Price and Stock

    Schneider Electric 199DBX3

    OPEN PWR RY, SPST-NO-DM, 40A, 24
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    DigiKey 199DBX3 Box 10
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    APEM Inc 5246WCDBX386

    TOGGLE SWITCH 5000 MINIATURE
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    DigiKey 5246WCDBX386 Bulk 25
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    Mouser Electronics 5246WCDBX386
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    Newark 5246WCDBX386 Bulk 25
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    Master Electronics 5246WCDBX386
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    APEM Inc 5236WADBX386

    TOGGLE SWITCH 5000 MINIATURE
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    Master Electronics 5236WADBX386
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    APEM Inc 5236WWCDBX386

    SWITCH TOGGLE SPDT 0.4VA 20V
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    DigiKey 5236WWCDBX386 Bulk 50
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    Mouser Electronics 5236WWCDBX386 49
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    Onlinecomponents.com 5236WWCDBX386
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    Master Electronics 5236WWCDBX386
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    APEM Inc 5449WWADBX386

    SWITCH TOGGLE DPDT 6A 125V
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    DigiKey 5449WWADBX386 Bulk 25
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    Mouser Electronics 5449WWADBX386
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    Newark 5449WWADBX386 Bulk 25
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    Master Electronics 5449WWADBX386
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    DBX3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DBX3

    Abstract: No abstract text available
    Text: ACTIVE FREQUENCY DOUBLERS CONT. MODEL: SYS2J060120 ELECTRICAL SPECIFICATIONS 3 – 6 GHz minimum Output frequency range 6 – 12 GHz minimum OUTPUT POWER (dBm) Input frequency range 10power range Input 0 level X1 Output -10 5 dBm X2 +12 dBX3 minimum Input harmonic rejection


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    SYS2J060120 DBX3 PDF

    DBX33B

    Abstract: BDX34C BDX33A BDX33B BDX33C BDX34A BDX34B
    Text: BDX33A/33B/33C BDX34A/34B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n DBX33B, BDX33C, BDX34B AND BDX34C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are


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    BDX33A/33B/33C BDX34A/34B/34C DBX33B, BDX33C, BDX34B BDX34C BDX33B, BDX33B BDX33C O-220 DBX33B BDX34C BDX33A BDX34A PDF

    NT5SV8M16FS

    Abstract: Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K
    Text: NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb Synchronous DRAM • • • • • • • • • • • • Features • High Performance: Maximum Operating Speed CAS Latency PC166 6KI PC133 (75BI) 2 7.5 10 ns 3 6 7.5 ns •


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    NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb PC166 PC133 NT5SV8M16FS Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K PDF

    dax6

    Abstract: Mobile SDRAM
    Text: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array


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    V55C1256164MG 256Mbit 100MHz dax6 Mobile SDRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time


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    0316409C 0316169C 0316809C 1Mx16 16Mbit -12ns 545-DRAM; PDF

    Untitled

    Abstract: No abstract text available
    Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page


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    0316409C 0316169C 0316809C 1Mx16 16Mbit SM2402T-6 SM2403T-6 SM2404T-6 SM2402T-7 SM2403T-7 PDF

    EM63A165TS-5G

    Abstract: EM63A165TS-6G EM63A165TS-7G EM63A165TS cke 2009 EM63A165
    Text: EtronTech EM63A165TS 16M x 16 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • • Fast access time from clock: 4.5/5.4/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation Internal pipelined architecture


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    EM63A165TS 16-bit cycles/64ms 54-pin EM63A165 EM63A165TS-5G EM63A165TS-6G EM63A165TS-7G EM63A165TS cke 2009 PDF

    V54C3128164VAT

    Abstract: No abstract text available
    Text: V54C3128164VAT HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 7PC 7 8PC System Frequency fCK 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


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    V54C3128164VAT 143/133/125MHz V54C3128164VAT PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


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    V54C365 64Mbit PDF

    V54C3128

    Abstract: No abstract text available
    Text: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


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    V54C3128 128Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


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    V54C365 64Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


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    V54C3256 256Mbit x16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


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    V54C3256 256Mbit x16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2


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    V54C3256 256Mbit 16Mbit PDF

    V54C3128

    Abstract: No abstract text available
    Text: V54C3128 16/80/40 4VC 128Mbit SDRAM 3.3 VOLT, TSOP II / BGA PACKAGE 8M X 16, 16M X 8, 32M X 4 5 6 7PC 7 10 System Frequency (fCK) 200 MHz 166 MHz 143 MHz 143 MHz 100 MHz Clock Cycle Time (tCK3) 5 ns 6 ns 7 ns 7 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3


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    V54C3128 128Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


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    V54C365 64Mbit PDF

    P-TSOPII-54

    Abstract: caz smd PC133 registered reference design
    Text: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10


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    39S64400/800/160ET 64-MBit P-TSOPII-54 caz smd PC133 registered reference design PDF

    54BALL

    Abstract: V54C3128
    Text: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


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    V54C3128 128Mbit 54BALL PDF

    SMD MARKING T20

    Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
    Text: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge


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    39S64400/800CT 64-MBit SPT03933 SMD MARKING T20 smd marking T22 MARKING A3 SMD MARKING CODE a09 PDF

    NT56V6610C0T-8A

    Abstract: nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A
    Text: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 June, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


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    NT56V6610C0T NT56V6620C0T PC133 PC100 4Mx16) NT56V6610C0T-8A nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A PDF

    P-TSOPII-54

    Abstract: PC133 registered reference design
    Text: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • High Performance: • Multiple Burst Read with Single Write Operation -7 -7.5 -8 Units fCK 143 133 125 MHz • Automatic and Controlled Precharge Command tCK3 7 7.5 8 ns • Data Mask for Read/Write Control (x4, x8)


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    39S128400/800/160CT 128-MBit P-TSOPII-54 PC133 registered reference design PDF

    marking code EY SMD

    Abstract: PC100-222-620 P-TSOPII-54
    Text: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN


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    HYB39L256160AC/T 256MBit 16Mbit P-TFBGA-54, PC133 SPT03919-3 marking code EY SMD PC100-222-620 P-TSOPII-54 PDF

    Untitled

    Abstract: No abstract text available
    Text: SG S-TH O M SO N lü3D SI^@lliyiiSin^@lDCl BDX33A/33B/33C B DX34A/34 B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . DBX33B, BDX33C, BDX34B AND BDX34C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in


    OCR Scan
    BDX33A/33B/33C DX34A/34 B/34C DBX33B, BDX33C, BDX34B BDX34C BDX33B, BDX33B BDX33C PDF

    DBX33B

    Abstract: dbx33
    Text: SGS-THOMSON MGMlLIOTIlMCt BDX33A/33B/33C BDX34A/34B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . DBX33B, BDX33C, BDX34B AND BDX34C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in


    OCR Scan
    BDX33A/33B/33C BDX34A/34B/34C DBX33B, BDX33C, BDX34B BDX34C BDX33B, BDX33B BDX33C T0-220 DBX33B dbx33 PDF