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    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit x16Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		PDF V54C3256 256Mbit x16Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2


    Original     		PDF V54C3256 256Mbit 16Mbit

    V54C3256

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/C) 256Mbit SDRAM 3.3 VOLT, TSOP II / TRUECSP PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit x16Mbit

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420T 4Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420 is organized as 4 banks of


    Original     		PDF HY57V56420T HY57V56420 456bit 216x4. 400mil 54pin

    V54C3256

    Abstract: V54C3256164VAB V54C3256164VAT V54C3256164VBT V54C3256404VAB V54C3256404VAT V54C3256404VBT V54C3256804VAB V54C3256804VAT V54C3256804VBT
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit 16Mbit V54C3256164VAB V54C3256164VAT V54C3256164VBT V54C3256404VAB V54C3256404VAT V54C3256404VBT V54C3256804VAB V54C3256804VAT V54C3256804VBT

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2


    Original     		PDF V54C3256 256Mbit 16Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VG 256Mbit SDRAM (3.0~3.3) VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


    Original     		PDF V54C3256 256Mbit x16Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VB 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		PDF V54C3256 256Mbit x16Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2


    Original     		PDF V54C3256 256Mbit x16Mbit

    V54C3256804V

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit x16Mbit V54C3256804V

    V54C3256164

    Abstract: V54C3256804
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit x16Mbit V54C3256164 V54C3256804

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420 L T 4Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420 is organized as 4 banks of 16,777,216x4.


    Original     		PDF HY57V56420 456bit 216x4. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2


    Original     		PDF V54C3256 256Mbit 16Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		PDF V54C3256 256Mbit x16Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		PDF V54C3256 256Mbit x16Mbit

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420T 4Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420 is organized as 4 banks of


    Original     		PDF HY57V56420T HY57V56420 456bit 216x4. 400mil 54pin

    HY57V56420T-H

    Abstract: No abstract text available
    Text: HY57V56420 4Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420 is organized as 4 banks of


    Original     		PDF HY57V56420 HY57V56420 456bit 216x4. 400mil 54pin HY57V56420T-H

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420T 4Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420 is organized as 4 banks of


    Original     		PDF HY57V56420T HY57V56420 456bit 216x4. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 1.3, Jan. 2006 HYS64D32020[H/G]DL–5–C HYS64D[32/16]0x0[H/G]DL–6–C 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Memory Products Edition 2006-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany


    Original     		PDF HYS64D32020 HYS64D 200-Pin L-DIM-200-6) 03182004-74RL-CGSF L-DIM-200-11)

    V54C3128

    Abstract: No abstract text available
    Text: V54C3128 16/80/40 4VC 128Mbit SDRAM 3.3 VOLT, TSOP II / BGA PACKAGE 8M X 16, 16M X 8, 32M X 4 5 6 7PC 7 System Frequency (fCK) 200 MHz 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 4.5 ns 5.4 ns


    Original     		PDF V54C3128 128Mbit x16Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VC 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		PDF V54C3256 256Mbit x16Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2


    Original     		PDF V54C3256 256Mbit x16Mbit