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    DBS21 Price and Stock

    Diodes Incorporated PI2DBS212ZHEX

    IC MUX/DEMUX 2X1 28TQFN
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    DigiKey PI2DBS212ZHEX Cut Tape 318 1
    • 1 $2.73
    • 10 $1.767
    • 100 $1.2287
    • 1000 $1.08996
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    PI2DBS212ZHEX Reel
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    Avnet Americas PI2DBS212ZHEX Reel 3,500
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    Diodes Incorporated PI2DBS212QE

    IC MUX/DEMUX 2X2 20QSOP
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    DigiKey PI2DBS212QE Tube 385
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    • 1000 $1.03535
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    Diodes Incorporated PI2DBS212ZHE

    IC MUX/DEMUX 2X2 28TQFN
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    DigiKey PI2DBS212ZHE Tray
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    Diodes Incorporated PI2DBS212QEX

    IC MUX/DEMUX 2X1 1.8V 20QSOP
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    DigiKey PI2DBS212QEX Reel
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    knitter-switch DBS2112

    - Rail/Tube (Alt: DBS2112)
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    Avnet Americas DBS2112 Tube 1,008
    • 1 $1.04
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    Chip1Stop DBS2112 Bulk 14
    • 1 $0.887
    • 10 $0.817
    • 100 $0.817
    • 1000 $0.817
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    Find more DBS21 price and stock on Findchips.com

    DBS21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CHA2066

    Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
    Text: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		PDF CHA2066 10-16GHz CHA2066 10-16GHz 20dBm DSCHA20660118 -27-Apr-00 MS11 MS12 MS21 MS22 PS11 PS12 PS22

    CHA2066

    Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f
    Text: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		PDF CHA2066 10-16GHz CHA2066 10-16GHz 20dBm DSCHA20661257 -14-Sept-01 MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f

    JCA Technology low noise amplifier

    Abstract: AD8354ACP-R2 02722 JCA Technology 812
    Text: 1 MHz to 2.7 GHz RF Gain Block AD8354 Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dBm Input/output internally matched to 50 Ω Temperature and power supply stable Noise figure: 4.2 dB Power supply: 3 V or 5 V APPLICATIONS


    Original     		PDF AD8354 AD8354 AD8354ACP-R2 AD8354ACP-REEL7 AD8354ACPZ-REEL7 AD8354-EVAL C02722 JCA Technology low noise amplifier 02722 JCA Technology 812

    Untitled

    Abstract: No abstract text available
    Text: 1 MHz to 2.7 GHz RF Gain Block AD8353 Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 9 dBm Input/output internally matched to 50 Ω Temperature and power supply stable Noise figure: 5.3 dB Power supply: 3 V or 5 V APPLICATIONS


    Original     		PDF AD8353 AD8353 AD8353ACP-R2 AD8353ACP-REEL7 AD8353ACPZ-REEL7 AD8353-EVAL C02721

    CHA2069-99F/00

    Abstract: CHA2069
    Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20679273 8-Sep-99 CHA2069-99F/00 CHA2069

    MAR105

    Abstract: CHA2066 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826
    Text: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA2066 10-16GHz CHA2066 10-16GHz 20dBm DSCHA20660069 MAR105 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826

    nf46

    Abstract: CHA3666 CHA3666-SNF
    Text: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-SNF 8-16GHz CHA3666-SNF 8-16GHz 24dBm 16dBm 12L-Glass/metal DSCHA3666-SNF7208 nf46 CHA3666

    CHT4690-99F

    Abstract: CHT4690 DSCHT46905334
    Text: CHT4690 RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.


    Original     		PDF CHT4690 5-30GHz CHT4690 5-30GHz 25dBm DSCHT46905334 CHT4690-99F

    CHA2066

    Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
    Text: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via


    Original     		PDF CHA2066 10-16GHz CHA2066 10-16GHz 20dBm DSCHA20664281 MS11 MS12 MS21 MS22 PS11 PS12 PS22

    CHT4690

    Abstract: CHT4690-99F 99-F
    Text: CHT4690-99F RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps


    Original     		PDF CHT4690-99F 5-30GHz CHT4690 5-30GHz 25dBm DSCHT46900211 CHT4690-99F 99-F

    10ghz variable attenuator

    Abstract: Fixed Attenuators Surface Mount 30dB AN0017 CHT4690-QAG RO4003 10ghz attenuator
    Text: CHT4690-QAG RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4690-QAG is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a


    Original     		PDF CHT4690-QAG 5-30GHz CHT4690-QAG 5-30GHz 25dBm 16Leads CHT4690QAG0211 10ghz variable attenuator Fixed Attenuators Surface Mount 30dB AN0017 RO4003 10ghz attenuator

    Untitled

    Abstract: No abstract text available
    Text: CHA3666-FAA 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-FAA is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-FAA 6-16GHz V/80mA. A3666 6-16GHz DSCHA3666-FAA2356

    Untitled

    Abstract: No abstract text available
    Text: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666 6-17GHz CHA3666 6-17GHz 26dBm 17dBm DSCHA3666-8108

    Untitled

    Abstract: No abstract text available
    Text: CHA1014 RoHS COMPLIANT 7-14GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1014 is a monolithic two-stage wide band low noise amplifier designed for a wide range of applications. The circuit is manufactured with a standard pHEMT process 0.25µm gate length, via


    Original     		PDF CHA1014 7-14GHz CHA1014 14GHz 10dBm DSCHA10140112

    Untitled

    Abstract: No abstract text available
    Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb

    Untitled

    Abstract: No abstract text available
    Text: CHA2394 RoHS COMPLIANT 36-40GHz Very Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description Vds Vds The CHA2394 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


    Original     		PDF CHA2394 36-40GHz CHA2394 DSCHA23946354

    CHA2194

    Abstract: No abstract text available
    Text: CHA2194 36-44GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 38 GHz to 44 GHz point to point and point to multipoints communication . The circuit is manufactured with a standard


    Original     		PDF CHA2194 36-44GHz 36-44GHz 20dBm dBS21 dBS11 dBS22 CHA2194

    variable attenuator at 15GHz with input power 12dBm

    Abstract: CHT4690 7135 35v
    Text: CHT4690 RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC


    Original     		PDF CHT4690 5-30GHz CHT4690 5-30GHz 25dBm DSCHT46908268 variable attenuator at 15GHz with input power 12dBm 7135 35v

    CHA2194

    Abstract: VG-12
    Text: CHA2194 RoHS COMPLIANT 36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .


    Original     		PDF CHA2194 36-44GHz 36GHz 44GHz 36-44GHz 20dBm DSCHA21942035 -04-Feb CHA2194 VG-12

    CHA8100

    Abstract: x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105
    Text: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power


    Original     		PDF CHA8100 CHA8100 DSCHA81000069 x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105

    CHT4690-QAG

    Abstract: variable attenuator at 15GHz AN0017 RO4003 16L-QFN
    Text: CHT4690-QAG RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4690-QAG is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a MESFET


    Original     		PDF CHT4690-QAG 5-30GHz CHT4690-QAG 5-30GHz 25dBm 16Leads CHT4690QAG6332 variable attenuator at 15GHz AN0017 RO4003 16L-QFN

    4093 bd

    Abstract: AN0017 CHA2066-QAG MO-220 PS11 PS12 PS22 RO4003 PCB Rogers RO4003 7649 qfn
    Text: CHA2066-QAG RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multi-point, VSAT to


    Original     		PDF CHA2066-QAG 10-16GHz CHA2066-QAG 10-16GHz DSCHA2066QAG6332 4093 bd AN0017 MO-220 PS11 PS12 PS22 RO4003 PCB Rogers RO4003 7649 qfn

    CHA2391

    Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
    Text: CHA2391 RoHS COMPLIANT 36-40GHz Very Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2391 is a two-stage wide band monolithic low noise amplifier. 25 50 IN The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA2391 36-40GHz CHA2391 36-40GHz 20dBm DSCHA23912240 -28-Aug MS11 MS12 MS21 MS22 PS11 PS12 PS22

    CHA2395

    Abstract: No abstract text available
    Text: CHA2395 RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


    Original     		PDF CHA2395 36-40GHz CHA2395 DSCHA23952240 -28-Aug