CHA2069-99F/00
Abstract: CHA2069
Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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Original
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PDF
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CHA2069
18-31GHz
18-31GHz
20dBm
DSCHA20679273
8-Sep-99
CHA2069-99F/00
CHA2069
|
CHA2069-99F/00
Abstract: CHA2069
Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via
|
Original
|
PDF
|
CHA2069
18-31GHz
18-31GHz
20dBm
DSCHA20679273
8-Sep-99
CHA2069-99F/00
CHA2069
|
Untitled
Abstract: No abstract text available
Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
|
Original
|
PDF
|
CHA2069
18-31GHz
18-31GHz
20dBm
DSCHA20679273
8-Sep-99
|