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    CHA3666 Price and Stock

    United Monolithic Semiconductors CHA3666-QAG

    RF Amp Module Single GP Amp 17GHz 4.5V 16-Pin QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical CHA3666-QAG 176 3
    • 1 -
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    United Monolithic Semiconductors CHA3666-QAG/20

    RF & MW LNA
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    Richardson RFPD CHA3666-QAG/20 120
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    United Monolithic Semiconductors CHA3666-FAB

    RF & MW LNA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD CHA3666-FAB 25
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    • 100 $541.12
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    United Monolithic Semiconductors M_CHA3666_EDG

    RF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD M_CHA3666_EDG 1
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    United Monolithic Semiconductors CHA3666-QAG/21

    RF & MW LNA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD CHA3666-QAG/21 3,000
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    Find more CHA3666 price and stock on Findchips.com

    CHA3666 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CHA3666 United Monolithic Semiconductors 6-17GHz Low Noise Amplifier Original PDF
    CHA3666-QAG United Monolithic Semiconductors 5.8-17GHz Low Noise Amplifier Original PDF
    CHA3666-SNF United Monolithic Semiconductors 5.8-16GHz Low Noise Amplifier Original PDF

    CHA3666 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nf46

    Abstract: CHA3666 CHA3666-SNF
    Text: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-SNF 8-16GHz CHA3666-SNF 8-16GHz 24dBm 16dBm 12L-Glass/metal DSCHA3666-SNF7208 nf46 CHA3666

    Untitled

    Abstract: No abstract text available
    Text: CHA3666-FAA 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-FAA is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-FAA 6-16GHz V/80mA. A3666 6-16GHz DSCHA3666-FAA2356

    Untitled

    Abstract: No abstract text available
    Text: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666 6-17GHz CHA3666 6-17GHz 26dBm 17dBm DSCHA3666-8108

    Untitled

    Abstract: No abstract text available
    Text: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-SNF is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-SNF 8-16GHz CHA3666-SNF 8-16GHz 24dBm 16dBm 12L-Glass/metal DSCHA3666-SNF2353

    CHA3666-QAG

    Abstract: AN0017
    Text: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-QAG 8-17GHz CHA3666-QAG 6-17GHz 26dBm 16dBm 16L-QFN3X3 DSCHA3666-QAG8108 AN0017

    CHA3666-QAG

    Abstract: AN0017
    Text: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-QAG 8-17GHz CHA3666-QAG 6-17GHz 26dBm 16dBm 16L-QFN3X3 DSCHA3666-QAG8108 AN0017

    IC 6693

    Abstract: CHA3666-SNF c 2026 amplifier CHA3666 4468 8 pin Assembly ic
    Text: CHA3666-SNF RoHS COMPLIANT 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-SNF 8-16GHz CHA3666-SNF 8-16GHz 24dBm 16dBm 12L-Glass/metal DSCHA3666-SNF7208 IC 6693 c 2026 amplifier CHA3666 4468 8 pin Assembly ic

    CHA3666-99F

    Abstract: CHA3666 CHA3666-99F/00
    Text: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666 6-17GHz CHA3666 6-17GHz 26dBm 17dBm DSCHA3666-8108 CHA3666-99F CHA3666-99F/00

    CHA3666

    Abstract: CHA3666-SNF
    Text: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-SNF 8-16GHz CHA3666-SNF 8-16GHz 24dBm 16dBm 12L-Glass/metal DSCHA3666-SNF0197 CHA3666

    CHA3666-99F

    Abstract: CHA3666-99F/00 CHA3666 8108
    Text: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666 6-17GHz CHA3666 6-17GHz 26dBm 17dBm DSCHA3666-8108 CHA3666-99F CHA3666-99F/00 8108

    Untitled

    Abstract: No abstract text available
    Text: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-QAG 8-17GHz CHA3666-QAG 6-17GHz 26dBm 16dBm 16L-QFN3X3 DSCHA3666-QAG8108

    CHA2066-99S

    Abstract: No abstract text available
    Text: UMS UNIQUE SPACE SOLUTION A complete selection of catalogue Class S products For many years, UMS has served the needs of the international space community by offering an extensive selection of space evaluated processes: • Low Noise PHEMT PH25, PH15 • Power MESFET (HP07)


    Original     		PDF PPH25X, PPH15, HB20S, HB20P) HB20M) MIL-PRF-38534. CND2047 CHS5100 CHP6013 CHX2089 CHA2066-99S

    PPH25X

    Abstract: No abstract text available
    Text: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14


    Original     		PDF