DC SERVO MOTOR closed loop pwm speed control
Abstract: low power pulse width modulator boost controller "Brushless DC Motor" Motor driven potentiometers Three-Phase Brushless DC Motor Controller IC MLX90401 500R IRF530 1N4007 1N4148
Text: MLX90401 Datasheet Brushless DC Motor Controller Features and Benefits • • • • • • • • 12V to 40V Operating Range On-Chip “Boost” Voltage Allows Use of All N-Channel Drivers Undervoltage Lockout On-Chip PWM Oscillator PWM Speed Control via Bottom Drivers
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PDF
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MLX90401
24-pin
QS9000,
ISO14001
MLX90401
21-Mar-02
DC SERVO MOTOR closed loop pwm speed control
low power pulse width modulator boost controller
"Brushless DC Motor"
Motor driven potentiometers
Three-Phase Brushless DC Motor Controller IC
500R
IRF530
1N4007
1N4148
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Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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PDF
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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PDF
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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PDF
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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PDF
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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PDF
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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PDF
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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cds photo diode
Abstract: IRF530 marking
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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PDF
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
cds photo diode
IRF530 marking
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91019-04
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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PDF
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
91019-04
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IRF530N
Abstract: IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description
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IRF530N
O-220
commercial-industrRF1010
IRF530N
IRF1010
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IRF5305S
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1386 IRF5305S HEXFET Power MOSFET Advanced Process Technology l Dynamic dv/dt Rating l Surface Mount l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
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IRF5305S
IRF5305S
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Untitled
Abstract: No abstract text available
Text: IRF530A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.11 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area TO-220 Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
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PDF
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IRF530A
O-220
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irf530a
Abstract: No abstract text available
Text: IRF530A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.11 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area TO-220 Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
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Original
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PDF
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IRF530A
O-220
irf530a
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IRF5305
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1385 IRF5305 HEXFET Power MOSFET l l l l l l D Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated VDSS = -55V RDS on = 0.06Ω
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PDF
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IRF5305
O-220
IRF5305
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RF1S540
Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power
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IRF530,
RF1S530SM
IRF53
O220AB
O263AB
RF1S540
RF1S540SM9A
RF1S530SM
OF IRF530
530uH
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00e-6
Abstract: IRF530N AN7254 AN7260 AN9321 AN9322 TB334
Text: IRF530N Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE IRF530N • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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PDF
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IRF530N
O-220AB
00e-6
IRF530N
AN7254
AN7260
AN9321
AN9322
TB334
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IRF530N
Abstract: MOSFET IRF530n
Text: IRF530N Data Sheet July 2001 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET FO pdfPackaging mark Features JEDEC TO-220AB [ /PageMode /UseOutlines /DOCVIEW pdfmark SOURCE DRAIN GATE DRAIN FLANGE IRF530N • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V
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IRF530N
O-220AB
IRF530N
MOSFET IRF530n
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4026 datasheet
Abstract: AN609 IRF530 SiHF530 IRF530R
Text: IRF530_RC, SiHF530_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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PDF
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IRF530
SiHF530
AN609,
01-Mar-10
4026 datasheet
AN609
IRF530R
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4026 datasheet
Abstract: AN609 IRF530S SiHF530S
Text: IRF530S_RC, SiHF530S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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PDF
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IRF530S
SiHF530S
AN609,
01-Mar-10
4026 datasheet
AN609
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IRF530
Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
Text: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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Original
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PDF
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IRF530
O-220AB
IRF530
IRF530T
IRF530 fairchild
929e1
980E3
IRF530 mosfet
ON semiconductor N51
IRF530 application
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IRF530
Abstract: tr irf530
Text: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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Original
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IRF530
O-220
IRF530
tr irf530
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IRF 260 N
Abstract: transistor IRF 531 IRF 850 transistor 531 IRF 530
Text: ¿ = 7 IRF 530/FI-531/FI IRF 532/FI-533/FI S G S -T H O M S O N ^ 7 # „ HlOiaiSiiBliaïUCTMMIKcül; N • CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIM INARY DATA TYPE V DSS ^DS on 'd ' IRF530 IRF530FI 100 V 100 V 0.16 n 0.16 n 14 A 9 A IRF531 IRF531FI
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OCR Scan
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PDF
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530/FI-531/FI
532/FI-533/FI
IRF530
IRF530FI
IRF531
IRF531FI
IRF532
IRF532FI
IRF533
IRF533FI
IRF 260 N
transistor IRF 531
IRF 850
transistor 531
IRF 530
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IRF 260 N
Abstract: transistor IRF 531 transistor 531 IRF 530 ISOWATT-220 IRF530FI ISOWATT220 IRF530 530FI IRF532
Text: 1 SGS-THOMSON 3QE D 7^237 0 02 ^77 3 S -TH O M S O N • • • • • "'P '3 > °ì~ \1 [RF 530/FI-531/FI IRF 532/FI-533/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V qss f*DS on IRF530 IRF530FI 100 V 100 V 0.16 ß 0.16 ß Id ' 14 A 9 A
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OCR Scan
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PDF
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530/FI-531/FI
532/FI-533/FI
IRF530
IRF530FI
IRF531
IRF531FI
IRF532
IRF532FI
IRF533
IRF533FI
IRF 260 N
transistor IRF 531
transistor 531
IRF 530
ISOWATT-220
ISOWATT220
530FI
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TT220
Abstract: transistor IRF 531 IRF 530 transistor 531
Text: rZ 7 SGS-THOMSON A T Æ . IRF 530/FI-531/FI IRF 532/FI-533/FI IH D Ê IM ÎIlL U tô M K O D È S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA • • • • TYPE V DSS R DS on IRF530 IRF530FI 100 V 100 V 0.16 0.16 IRF531 IRF531FI
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OCR Scan
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PDF
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530/FI-531/FI
532/FI-533/FI
IRF530
IRF530FI
IRF531
IRF531FI
IRF532
IRF532FI
IRF533
IRF533FI
TT220
transistor IRF 531
IRF 530
transistor 531
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