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Kyocera AVX Components 200B393KP50XC100 Silicon RF Capacitors / Thin Film MLC A/B/R
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Mouser Electronics	200B393KP50XC100					1 $6.91 10 $6 100 $4.61 1000 $3.91 10000 $3.84	Get Quote
Kyocera AVX Components 200B393KP50XT Silicon RF Capacitors / Thin Film 50V .039uF Tol 10% Las Mkg
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Kyocera AVX Components 200B393KP50XT1K Silicon RF Capacitors / Thin Film 50V 0.039uF Tol 10% Las Mkg
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Mouser Electronics	200B393KP50XT1K					1 - 10 - 100 - 1000 $2.35 10000 $2.35	Get Quote

200B393KP50X Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class	Original	MRFG35010MT1 MRFG35010NT1 MRFG35010MT1	PDF
13009 TRANSISTOR equivalent Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to	Original	MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent	PDF
6 017 03 61 Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07	PDF
transistor std 13007 Abstract: ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class	Original	MRFG35010N MRFG35010NT1 transistor std 13007 ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2	PDF
MRFG35010ANT1 Abstract: IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1 MRFG35010ANT1 IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT	PDF
transistor std 13007 Abstract: 0944 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class	Original	MRFG35010N MRFG35010NT1 MRFG35010N transistor std 13007 0944	PDF
transistor on 4959 Abstract: GT5040 Text: Document Number: MRFG35002N6 Rev. 0, 2/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35002N6 MRFG35002N6T1 MRFG35002N6 transistor on 4959 GT5040	PDF
100A100JP150X Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class	Original	MRFG35010MT1 MRFG35010NT1 MRFG35010MT1 100A100JP150X	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1	PDF
6 017 03 61 Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,	Original	MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1 6 017 03 61 A113 MRFG35010ANT1 Z16C20	PDF
GT1040 Abstract: 466 907 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1 Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1 GT1040 466 907 A113 AN1955 MRFG35002N6AT1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,	Original	MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1	PDF
P51ETR-ND Abstract: A113 A114 A115 AN1955 C101 JESD22 MRFG35010ANT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1 P51ETR-ND A113 A114 A115 AN1955 C101 JESD22 MRFG35010ANT1	PDF

GT1040 Abstract: 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1 Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT MRFG35002N6T1 RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35002N6 MRFG35002N6T1 GT1040 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1	PDF
13009 TRANSISTOR equivalent Abstract: transistor d 13009 Text: MOTOROLA Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in	Original	MRFG35030R5/D MRFG35030R5 MRFG35030R5 MRFG35030R5/D 13009 TRANSISTOR equivalent transistor d 13009	PDF
13009 TRANSISTOR equivalent Abstract: MRFG35030 transistor d 13009 MRFG35030R5 Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in	Original	MRFG35030R5 13009 TRANSISTOR equivalent MRFG35030 transistor d 13009	PDF
MC13892 Abstract: FET GAAS marking a transistor z4 30 transistor d 13009 H 9832 C696 MARKING Z7 RF TRANSISTOR 2.5 GHZ s parameter mc13892 schematic MRFG35030 Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in	Original	MRFG35030R5 MC13892 MC13892 FET GAAS marking a transistor z4 30 transistor d 13009 H 9832 C696 MARKING Z7 RF TRANSISTOR 2.5 GHZ s parameter mc13892 schematic MRFG35030	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRFG35010MT1 MRFG35010NT1.	PDF
2312 footprint dimension Abstract: A113 AN1955 MRFG35002N6T1 GT1040 Text: Document Number: MRFG35002N6 Rev. 1, 5/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35002N6 MRFG35002N6T1 2312 footprint dimension A113 AN1955 MRFG35002N6T1 GT1040	PDF
atc 17-33 Abstract: MRFG35010ANT1 5V piezo 9mm X 12mm IRL 724 N A113 A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1 atc 17-33 MRFG35010ANT1 5V piezo 9mm X 12mm IRL 724 N A113 A114 A115 AN1955 C101 JESD22	PDF
A113 Abstract: MRFG35010ANT1 MRFG35010NT1 100A100JP150X Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class	Original	MRFG35010N MRFG35010NT1 A113 MRFG35010ANT1 MRFG35010NT1 100A100JP150X	PDF

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Kyocera AVX Components 200B393KP50XC100

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200B393KP50X Datasheets Context Search

Untitled

13009 TRANSISTOR equivalent

6 017 03 61

transistor std 13007

MRFG35010ANT1

transistor std 13007

transistor on 4959

100A100JP150X

Untitled

Untitled

6 017 03 61

GT1040

Untitled

P51ETR-ND

GT1040

13009 TRANSISTOR equivalent

13009 TRANSISTOR equivalent

MC13892

Untitled

2312 footprint dimension

atc 17-33

A113