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Kyocera AVX Components 100B5R6CP500XT CAP CER 5.6PF 500V P90 1111
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DigiKey	100B5R6CP500XT	Reel			500	1 - 10 - 100 - 1000 $3.69642 10000 $3.69642	Buy Now
Avnet Americas	100B5R6CP500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B5R6CP500XT					1 $5.45 10 $4.69 100 $3.7 1000 $3.7 10000 $3.7	Get Quote
TTI	100B5R6CP500XT	Reel			500	1 - 10 - 100 - 1000 $3.59 10000 $3.32	Buy Now
Richardson RFPD	100B5R6CP500XT				500	1 - 10 - 100 - 1000 $2.64 10000 $2.36	Buy Now
Kyocera AVX Components 100B5R6CP500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B5R6CP500XT1K)
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Avnet Americas	100B5R6CP500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B5R6CP500XT1K					1 - 10 - 100 - 1000 $2.51 10000 $2.51	Get Quote
Kyocera AVX Components 100B5R6CP500XC100 Silicon RF Capacitors / Thin Film MLC A/B/R
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Mouser Electronics	100B5R6CP500XC100					1 $5.93 10 $5.1 100 $3.81 1000 $3.08 10000 $3.02	Get Quote
Richardson RFPD	100B5R6CP500XC100		5		200	1 - 10 - 100 - 1000 $2.64 10000 $2.36	Buy Now
Kyocera AVX Components 100B5R6CP500XTV1K Silicon RF Capacitors / Thin Film MLC A/B/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B5R6CP500XTV1K					1 - 10 - 100 - 1000 $2.51 10000 $2.51	Get Quote
American Technical Ceramics Corp ATC100B5R6CP500XB CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 4.4643% +TOL, 4.4643% -TOL, BG, 90+/-20PPM/CEL TC, 0.0000056UF, SURFACE MOUNT, 1111 (Also Known As: 100B5R6CP500XB)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC100B5R6CP500XB		10			1 $4.5 10 $2.25 100 $2.25 1000 $2.25 10000 $2.25	Buy Now

100B5R6CP500X Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B5R6CP500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 5.6PF 500V P90 1111		Original	PDF

100B5R6CP500X Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3	PDF
nippon capacitors Abstract: MRF6S23140H j727 Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to	Original	MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140H nippon capacitors j727	PDF
100B2R7CP500X Abstract: AN1955 MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line	Original	MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3 100B2R7CP500X AN1955 MRF5S21100HSR3 MRF5S21100L	PDF
AN1955 Abstract: CDR33BX104AKWS MRF5S21100HR3 MRF5S21100HSR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3	Original	MRF5S21100H/D MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 AN1955 CDR33BX104AKWS MRF5S21100HSR3	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110	Original	MRF5S21100H/D MRF5S21100HR3 MRF5S21100HR3 MRF5S21100HSR3	PDF
J673 Abstract: J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HR3 MRF6S23140HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to	Original	MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3 J673 J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HSR3	PDF
NIPPON CAPACITORS Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion	Original	MRF6P23190H MRF6P23190HR6 MRF6P23190H NIPPON CAPACITORS	PDF
nippon capacitors Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 0, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies	Original	MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140H nippon capacitors	PDF
Untitled Abstract: No abstract text available Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3	PDF
k 2645 MOSFET Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22	PDF
100B102JP50X Abstract: 3.40 pf variable capacitor A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 100B5R6CP500X Z25 transistor Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6P18190H MRF6P18190HR6 100B102JP50X 3.40 pf variable capacitor A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 100B5R6CP500X Z25 transistor	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. H suffix indicates lower thermal resistance package. MRF5S21100LR3 RF Power Field Effect Transistors MRF5S21100LSR3	Original	MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 456 mhz Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to	Original	MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S23100HR3 A114 A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HSR3 456 mhz Nippon capacitors	PDF
motorola 5118 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	84RF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 motorola 5118	PDF

100B2R7CP500X Abstract: MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HR3 MRF5S21100HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 100B2R7CP500X MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HSR3	PDF
ansi-y14.5m-1994 Abstract: 100B2R7CP500X CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 motorola 5118 Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100L N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	MRF5S21100L/D MRF5S21100L MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 ansi-y14.5m-1994 100B2R7CP500X CDR33BX104AKWS MRF5S21100LSR3 motorola 5118	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies	Original	MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S23100HR3 A114 A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HSR3 Nippon capacitors	PDF
NIPPON CAPACITORS Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.	Original	MRF6P23190H MRF6P23190HR6 MRF6P23190H NIPPON CAPACITORS	PDF
j686 Abstract: FERRITE BEAD 1000 OHM 0805 Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF6S231100H Rev. 0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies	Original	MRF6S231100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S231100H j686 FERRITE BEAD 1000 OHM 0805 Nippon capacitors	PDF
Untitled Abstract: No abstract text available Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3	PDF
k 2645 MOSFET Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.	Original	MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF5S21100L/D MRF5S21100LR3 MRF5S21100LR3 MRF5S21100LSR3	PDF
motorola 5118 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF5S21100H/D MRF5S21100HR3 MRF5S21100HR3 MRF5S21100HSR3 motorola 5118	PDF

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Kyocera AVX Components 100B5R6CP500XT

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American Technical Ceramics Corp ATC100B5R6CP500XB

100B5R6CP500X Datasheets (1)

100B5R6CP500X Datasheets Context Search

Untitled

nippon capacitors

100B2R7CP500X

AN1955

Untitled

J673

NIPPON CAPACITORS

nippon capacitors

Untitled

k 2645 MOSFET

100B102JP50X

Untitled

A114

motorola 5118

100B2R7CP500X

ansi-y14.5m-1994

A114

NIPPON CAPACITORS

j686

Untitled

k 2645 MOSFET

Untitled

motorola 5118