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    D27Z Search Results

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    D27Z Price and Stock

    onsemi BC63916-D27Z

    TRANS NPN 80V 1A TO92-3
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    DigiKey BC63916-D27Z Reel 6,000 2,000
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    BC63916-D27Z Cut Tape 3,455 1
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    Mouser Electronics BC63916-D27Z 5,332
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    Newark BC63916-D27Z Cut Tape 28 1
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    Onlinecomponents.com BC63916-D27Z 6,000
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    Rochester Electronics BC63916-D27Z 863 1
    • 1 $0.1135
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    • 1000 $0.0965
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    TME BC63916-D27Z 1,959 1
    • 1 $0.441
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    • 100 $0.203
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    Chip 1 Exchange BC63916-D27Z 5,103
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    Chip1Stop BC63916-D27Z 18,000
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    BC63916-D27Z Cut Tape 199
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    EBV Elektronik BC63916-D27Z 39 Weeks 2,000
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    Flip Electronics BC63916-D27Z 19,841
    • 1 $0.057
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    Master Electronics BC63916-D27Z 6,000
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    onsemi BS170-D27Z

    MOSFET N-CH 60V 500MA TO92-3
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    DigiKey BS170-D27Z Reel 4,000 2,000
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    BS170-D27Z Cut Tape 1,733 1
    • 1 $0.44
    • 10 $0.268
    • 100 $0.1692
    • 1000 $0.11269
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    Mouser Electronics BS170-D27Z 6,665
    • 1 $0.44
    • 10 $0.261
    • 100 $0.127
    • 1000 $0.113
    • 10000 $0.074
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    Newark BS170-D27Z Cut Tape 7,322 1
    • 1 $0.097
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    BS170-D27Z Reel 2,000 2,000
    • 1 $0.077
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    BS170-D27Z Reel 4,000
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    BS170-D27Z Cut Tape 1
    • 1 $0.437
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    • 100 $0.157
    • 1000 $0.139
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    Onlinecomponents.com BS170-D27Z 10,000
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    TME BS170-D27Z 4,760 5
    • 1 -
    • 10 $0.26
    • 100 $0.115
    • 1000 $0.103
    • 10000 $0.096
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    Richardson RFPD BS170-D27Z 10,000
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    Avnet Silica BS170-D27Z 13 Weeks 2,000
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    Chip1Stop BS170-D27Z 6,000
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    EBV Elektronik BS170-D27Z 6,000 14 Weeks 2,000
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    Master Electronics BS170-D27Z 10,000
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    New Advantage Corporation BS170-D27Z 4,000 1
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    Fischer Elektronik GmbH & Co KG BLM 3 SMD 27 Z

    expanded insulator - suitable fo
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLM 3 SMD 27 Z Bulk 1,000 10
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    • 10 $2.942
    • 100 $2.942
    • 1000 $2.942
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    Fischer Elektronik GmbH & Co KG BLM 1 SMD 27 Z

    wide isolation body - suitable f
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    DigiKey BLM 1 SMD 27 Z Bulk 1,000 10
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    • 10 $3.259
    • 100 $3.259
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    Fischer Elektronik GmbH & Co KG BL LP 7 SMD 27 Z

    FOR 0.635 MM AND UP TO 0.85 MM
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    DigiKey BL LP 7 SMD 27 Z Bulk 1,000 10
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    • 10 $3.33
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    Find more D27Z price and stock on Findchips.com

    D27Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor

    transistor 2N5461

    Abstract: No abstract text available
    Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		PDF 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 transistor 2N5461

    2N5306

    Abstract: F63TNR MPSA14 PN2222N CBVK741B019
    Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5306 MPSA14 2N5306 F63TNR PN2222N CBVK741B019

    rf transistor mark code H1

    Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
    Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH24 MMBTH24 MPSH24 OT-23 MPSH11 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH24 MPSH11 PN2222N

    FPN630

    Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE
    Text: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol


    Original     		PDF FPN630 FPN630A FPN630 O-226 FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE

    MPS A06 transistor

    Abstract: MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPSA06 MMBTA06 PZTA06 MPSA06 MMBTA06 OT-23 OT-223 MPSA06RA O-92-3 MPS A06 transistor MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps

    Untitled

    Abstract: No abstract text available
    Text: PN4355 MMBT4355 C E C BE TO-92 B SOT-23 Mark: 81 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings*


    Original     		PDF PN4355 MMBT4355 PN4355 OT-23 TN4033A

    transistor j210

    Abstract: 212 t sot-23
    Text: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from


    Original     		PDF MMBFJ210 MMBFJ211 MMBFJ212 OT-23 transistor j210 212 t sot-23

    25c reference top mark sot23

    Abstract: sot23 A63
    Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MPSA63 MMBTA63 PZTA63 MPSA63 MMBTA63 OT-23 OT-223 MPSA64 25c reference top mark sot23 sot23 A63

    2N5551B

    Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU

    MOSFET bs170

    Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
    Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


    Original     		PDF BS170 MMBF170 500mA MOSFET bs170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note

    BC212L

    Abstract: CBVK741B019 F63TNR PN2222N
    Text: BC212L BC212L B C E TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF BC212L 300mA. BC212L CBVK741B019 F63TNR PN2222N

    t1 BC547

    Abstract: specifications of BC547B transistor BC547B bc547c fairchild transistor bc547 specifications 547B 547C Bc547B TRANSISTOR BC547A CBVK741B019
    Text: BC547 / BC547A / BC547B / BC547C BC547 BC547A BC547B BC547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.


    Original     		PDF BC547 BC547A BC547B BC547C BC547 BC547A BC547B PN100A t1 BC547 specifications of BC547B transistor bc547c fairchild transistor bc547 specifications 547B 547C Bc547B TRANSISTOR CBVK741B019

    BC368

    Abstract: CBVK741B019 F63TNR PN2222N
    Text: BC368 BC368 B C TO-92 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BC368 BC368 CBVK741B019 F63TNR PN2222N

    Untitled

    Abstract: No abstract text available
    Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold


    Original     		PDF MMBFJ175 MMBFJ175 MMBFJ176 MMBFJ177 OT-23

    Untitled

    Abstract: No abstract text available
    Text: TN6714A / NZT6714 TN6714A NZT6714 C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings*


    Original     		PDF TN6714A NZT6714 TN6714A O-226 OT-223

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    CBVK741B019

    Abstract: F63TNR MMBTA42 MPSA42 PN2222N PZTA42
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


    Original     		PDF MMBTA42 PZTA42 OT-23 OT-223 CBVK741B019 F63TNR MMBTA42 MPSA42 PN2222N PZTA42

    MMBF4119

    Abstract: PN4117 transistor 61e F63TNR MMBF4117 MMBF4118 PN2222N PN4118 PN4119 CBVK741B019
    Text: MMBF4117 MMBF4118 MMBF4119 PN4117 PN4118 PN4119 G D G S TO-92 SOT-23 D S Mark: 61A / 61C / 61E N-Channel Switch This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal


    Original     		PDF MMBF4117 MMBF4118 MMBF4119 PN4117 PN4118 PN4119 OT-23 MMBF4119 PN4117 transistor 61e F63TNR MMBF4117 MMBF4118 PN2222N PN4118 PN4119 CBVK741B019

    Untitled

    Abstract: No abstract text available
    Text: PN4275 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF PN4275 PN2369A

    Transistor J310

    Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
    Text: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.


    Original     		PDF MMBFJ309 MMBFJ310 OT-23 Transistor J310 J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note

    2N5486

    Abstract: 2N5484 2N5485 CBVK741B019 MMBF5484 MMBF5485 MMBF5486
    Text: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching


    Original     		PDF 2N5484 MMBF5484 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 OT-23 2N5486 2N5485 CBVK741B019 MMBF5485 MMBF5486

    Untitled

    Abstract: No abstract text available
    Text: TIS73 / TIS74 TIS73 TIS74 G S TO-92 D NOTE: Source & Drain are interchangeable N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 54.


    Original     		PDF TIS73 TIS74 TIS73

    CBVK741B019

    Abstract: F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF PN5179 MMBT5179 OT-23 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223