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    D2221 Search Results

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    D2221 Price and Stock

    ROHM Semiconductor BD2221G-TR

    IC PWR SWITCH N-CHAN 1:1 5SSOP
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    DigiKey BD2221G-TR Reel 3,000 3,000
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    Mouser Electronics BD2221G-TR 2,951
    • 1 $0.95
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    TME BD2221G-TR 1
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    Ameya Holding Limited BD2221G-TR 100 1
    • 1 $0.99
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    Chip1Stop BD2221G-TR Cut Tape 90
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    ROHM Semiconductor BD2221G-LBTR

    IC PWR SWITCH N-CHAN 1:1 5SSOP
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    DigiKey BD2221G-LBTR Cut Tape 2,440 1
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    Mouser Electronics BD2221G-LBTR 2,510
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    Rochester Electronics LLC CD22212E1

    SINGLE-CHIP 1200BPS MODEM
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    DigiKey CD22212E1 Bulk 770 36
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    JRH Electronics TW-10-03-L-D-222-115

    CONN BRD STACK 2.00 20POS
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    DigiKey TW-10-03-L-D-222-115 Bulk 195
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    JRH Electronics TW-18-03-L-D-222-120

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    DigiKey TW-18-03-L-D-222-120 Bulk 120
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    D2221 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    D2221UK Semelab Metal Gate RF Silicon FET Original PDF

    D2221 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2221UK

    Abstract: No abstract text available
    Text: TetraFET D2221UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 12.5V – 1GHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D2221UK D2221UK

    D2221UK

    Abstract: No abstract text available
    Text: TetraFET D2221UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 12.5V – 1GHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D2221UK D2221UK

    D2-470K

    Abstract: D2-331K D2270 D4-270K D4182 D2-100K D2-120K D2-330K D2390 D4-121K
    Text: HIGH CURRENT DRUM CORE INDUCTOR SERIES D 59 B ELECTRICAL CHARACTERISTICS - Inductance - Tolerance - Rated current - Testing procedures 1.0uH to 4700uH ± 20% for values under 10µH ± 10% for values above 10µH Obtained when Lo drops 10% typical Quadtech LCR 1750 Meter @ 1KHz


    Original     		PDF 4700uH D4-122K D4-152K D4-182K D4-222K D4-272K D4-332K D4-392K D4-472K D2-470K D2-331K D2270 D4-270K D4182 D2-100K D2-120K D2-330K D2390 D4-121K

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original     		PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    MO-150

    Abstract: W223
    Text: W223 SDRAM Buffer -2 DIMM Features Key Specification • Ten skew-controlled CMOS outputs SDRAM0:9 • Supports two SDRAM DIMMs • Ideal for high performance systems designed around Intel’s latest Mobile chip set • I2C Serial configuration interface


    Original     		PDF 28-pin, 209-inch MO-150 W223

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    W184

    Abstract: W185 W185-5 hjc 0.1uf
    Text: W185 Six Output Peak Reducing EMI Solution Features Table 1. Modulation Width Selection • Cypress PREMIS family offering • Generates an EMI optimized clocking signal at the output • Selectable output frequency range • Six 1.25%, 3.75%, or 0% down or center spread outputs


    Original     		PDF 24-pin W185-5 W184 W185 W185-5 hjc 0.1uf

    d1521

    Abstract: D1352 D1332 D1701
    Text: D1000 and D2000 OMEGABUS Digital Transmitters 250 $ Basic Unit MADE IN USA ߜ Complete Sensor To RS-232C or RS-485 Interface ߜ Input Modules for Thermocouples, RTDs, Voltages, Currents, Pulse and Frequency, and Bridge Inputs ߜ Isolated Inputs ߜ RS-485 Format Permits


    Original     		PDF D1000 D2000 RS-232C RS-485 RS-485 d1521 D1352 D1332 D1701

    W184

    Abstract: W185
    Text: W185 Six Output Peak Reducing EMI Solution Features Table 1. Modulation Width Selection • Cypress PREMIS family offering • Generates an EMI optimized clocking signal at the output • Selectable output frequency range • Six –1.25%, –3.75%, or 0% down spread outputs


    Original     		PDF 24-pin W184 W185

    Untitled

    Abstract: No abstract text available
    Text: W185 Six Output Peak Reducing EMI Solution Features Table 1. Modulation Width Selection • Cypress PREMIS family offering • Generates an EMI optimized clocking signal at the output • Selectable output frequency range • Six –1.25%, –3.75%, or 0% down spread outputs


    Original     		PDF 24-pin

    D2470

    Abstract: No abstract text available
    Text: A HIGH CURRENT DRUM CORE INDUCTOR SERIES D B C ELECTRICAL CHARACTERISTICS - Inductance - Tolerance 1.0µH to 3100µH ±20% for values under 10µH DIMENSIONS IN INCHES ±10% for values above 10µH SIZE Dia A Max Length B ( Max ) - Current rating Based on value obtained when initial L value has fallen


    Original     		PDF SPECIFICAT320 D2470

    GNS430

    Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
    Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon


    Original     		PDF GNS530 GNS430 750mW break400 1-200MHz 1-500MHz 1-400MHz D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK

    Untitled

    Abstract: No abstract text available
    Text: nil Vrr r = mi TetraFET D2221UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7 .5 W - 1 2 .5 V - 1GHz SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS


    OCR Scan     		PDF D2221UK S08PACKAGE

    D2030* equivalent

    Abstract: F0127 F-Q127 P0127
    Text: Sem eiab is pleased to announce a new range o f surface-m ount RF^SOSFEFs in the F-0127 package to com plem ent its existing range in the fa m ilia r SO8 package, The F-Q127 package o ffe rs several benefits to users com pared w ith the SOB package: • Easter attachm ent to a PCB


    OCR Scan     		PDF F-0127 F-Q127 D1011UK D1211UK D2019UK D2020UK D2219UK D2220UK D2221UK D1031UK D2030* equivalent F0127 P0127