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    D 346 TRANSISTOR Search Results

    D 346 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    D 346 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    116A

    Abstract: C67078-S3120-A2 D 346 transistor
    Text: BUZ 346 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 346 50 V 58 A 0.018 Ω TO-218 AA C67078-S3120-A2 Maximum Ratings Parameter Symbol


    Original     		O-218 C67078-S3120-A2 116A C67078-S3120-A2 D 346 transistor PDF

    D 346 transistor

    Abstract: C67078-S3120-A4
    Text: BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 346 S2 60 V 58 A 0.018 Ω TO-218 AA C67078-S3120-A4 Maximum Ratings Parameter


    Original     		O-218 C67078-S3120-A4 D 346 transistor C67078-S3120-A4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 346 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode vvoyss ' fé i • Avalanche-rated Pin 1 Pin 2 G Type B U Z 346 Vbs 50 V b 58 A flDS on 0.018 n Pin 3 D S Package Ordering Code TO-218AA C67078-S3120-A2 Maximum Ratings


    OCR Scan     		O-218AA C67078-S3120-A2 flE35b05 PDF

    aqz107

    Abstract: AQX2144 AQY272 AQY272A AQY272AX AQY274A AQY274AX AQY275A AQY275AX AQY277A
    Text: AQY27❍ PhotoMOS RELAYS PD Type 1- channel Form A Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 8.8±0.2 .346±.008 9.3±0.2 .366±.008 3.9±0.2 .154±.008 8.8±0.2 .346±.008 3.7±0.2 .146±.008 9.3±0.2 .366±.008 mm inch 1. Flat-Packaged Type (W) 8.8x (D)


    Original     		AQY27r E43149 LR26550 154inch AQY272) AQZ105 AQZ205 AQZ107 AQZ207 aqz107 AQX2144 AQY272 AQY272A AQY272AX AQY274A AQY274AX AQY275A AQY275AX AQY277A PDF

    BUZ 140 L

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power MOS Transistors VDS /q ^D S o n • • • • BUZ 16 BUZ 346 BUZ 346 S2 = 50 . . . 60 V = 48 . . . 58 A = 0.018 Q T O -2 04 AE (BUZ 16) N channel E nhancem ent mode A valanche-proof Packages: TO -204A E (TO-3) T O -2 18 A A (T O P -3)1)


    OCR Scan     		-204A 7078-A 020-A 31-A2 BUZ 140 L PDF

    relay dc 24V matsushita

    Abstract: AQY27 DC to AC transformer smoke detector schematic diagrams Solar Charge Controller diagram Transistors Diodes smd e2 ultrasonic range meter IC schematic diagram dc to ac converter transformer dc to ac AQY272
    Text: AQY27❍ PhotoMOS RELAYS PD Type 1- channel Form A Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 8.8±0.2 .346±.008 9.3±0.2 .366±.008 3.9±0.2 .154±.008 8.8±0.2 .346±.008 3.7±0.2 .146±.008 9.3±0.2 .366±.008 mm inch 1. Flat-Packaged Type (W) 8.8x (D)


    Original     		AQY27r E43149 LR26550 154inch AQY272) AQZ105 AQZ205 AQZ107 AQZ207 relay dc 24V matsushita AQY27 DC to AC transformer smoke detector schematic diagrams Solar Charge Controller diagram Transistors Diodes smd e2 ultrasonic range meter IC schematic diagram dc to ac converter transformer dc to ac AQY272 PDF

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1233D5PM Microcontroller identical to LM4F120C4QR D ATA SHE E T D S -T M 4C 1233 D5 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 346 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright


    Original     		TM4C1233D5PM LM4F120C4QR) PDF

    smd transistor J3

    Abstract: No abstract text available
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1233D5PM Microcontroller identical to LM4F120C4QR D ATA SHE E T D S -T M 4C 1233 D5 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 346 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright


    Original     		TM4C1233D5PM LM4F120C4QR) smd transistor J3 PDF

    DIODE BUZ

    Abstract: sis 661
    Text: SIEMENS BUZ 346 SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Ordering Code Tc ^DS on Package 1> 58 A 73 °C 0.018 n TO -218 AA C67078-S3120-A2 58 A 73 ‘ C 0.018£2 TO -218 AA C67078-S3120-A 4 Type VDS ¡a BUZ 346 50 V


    OCR Scan     		C67078-S3120-A2 C67078-S3120-A DIODE BUZ sis 661 PDF

    C67078-S3120-A2

    Abstract: No abstract text available
    Text: SIPMOS Power Transistors BUZ 346 BUZ 346 S2 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID TC RDS on Package 1) Ordering Code BUZ 346 50 V 58 A 73 ˚C 0.018 Ω TO-218 AA C67078-S3120-A2 BUZ 346 S2 60 V 58 A 73 ˚C 0.018 Ω TO-218 AA


    Original     		O-218 C67078-S3120-A2 C67078-S3120-A3 C67078-S3120-A2 PDF

    D 346 transistor

    Abstract: No abstract text available
    Text: SIEMENS BUZ 346 S2 Not far new design SJPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b 58 A flbaon 0.018 n Package Ordering Code TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		O-218AA C67078-S3120-A4 O-218 D 346 transistor PDF

    TRANSISTOR sd 346

    Abstract: No abstract text available
    Text: SIEMENS BUZ 346 N oi fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 Vds 50 V b 58 A ^DS on Package Ordering Code 0.018 Q TO-218 AA C67078-S3120-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		O-218 C67078-S3120-A2 TRANSISTOR sd 346 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b ^DS on Package Ordering Code 58 A 0.018 n TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		O-218AA C67078-S3120-A4 fi53SbD5 PDF

    2n4401 331

    Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
    Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598


    OCR Scan     		2N3904 2N3906 2N4401 2N4403 2SA821S. 2SA830S. 2SA854S. 2SB822 2n4401 331 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B PDF

    transistor D600k

    Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor transistor B631K k b631k PDF

    2sb631 transistor

    Abstract: transistor b631 transistor D600k 2sb631 2sd600
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 2sb631 transistor transistor b631 transistor D600k 2sd600 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE DEVELOPMENT D A T A ObE D bbS3T31 D0152D1 fl • RX3034B70W This data sheet contains advance information and specifications are subject to change without notice. PULSED MICROWAVE POWER TRANSISTORS NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C


    OCR Scan     		bbS3T31 D0152D1 RX3034B70W 0D152D5 33-iS. PDF

    SILICON COMPLEMENTARY transistors darlington

    Abstract: NTE2554 NTE2555
    Text: NTE2554 NPN & NTE2555 (PNP) Silicon Complementary Transistors Darlington Driver Applications: D Industrial Equipment D Printers D Typewriters D Sewing Machines D Recorders D Computers D Igniters D D D D D D D Car Coolers Projectors Players Stereos Home Appliances


    Original     		NTE2554 NTE2555 SILICON COMPLEMENTARY transistors darlington NTE2554 NTE2555 PDF

    sd 347

    Abstract: VEB mikroelektronik Transistoren DDR sd 346 Funkamateur FUNKAMATEUR-Bauelementeinformation SD349 telefunken transistoren MIKROELEKTRONIK ERFURT aktive elektronische bauelemente ddr
    Text: FUNKAMATEUR-Bauelementeinformation Silizium-npn- und -pnp-Leistungstransistoren in Epitaxie-Planar-Technologie A pplikationsschaltungen T G L 39125 H ersteller: V E B M ik ro e le k tro n ik „ A n n a S e g h e r s " N e u h a u s Kurzcharakteristik Grenzwerte im Betriebstemperaturbereich


    OCR Scan     		Anzugsmomentvon50. 80Ncm sd 347 VEB mikroelektronik Transistoren DDR sd 346 Funkamateur FUNKAMATEUR-Bauelementeinformation SD349 telefunken transistoren MIKROELEKTRONIK ERFURT aktive elektronische bauelemente ddr PDF

    NTE2591

    Abstract: NPN transistor 900v
    Text: NTE2591 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage, High Reliability D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V


    Original     		NTE2591 NTE2591 NPN transistor 900v PDF

    NPN 800V

    Abstract: NPN VCEO 800V transistor 800v NTE2585
    Text: NTE2585 Silicon NPN Transistor High Voltage Amplifier Features: D High Breakdown Voltage D Low Output Capacitance D High Reliability D Intended for High–Density Mounting Suitable for Sets Whose Height is Restricted Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		NTE2585 NPN 800V NPN VCEO 800V transistor 800v NTE2585 PDF

    NTE2591

    Abstract: NTE259
    Text: NTE2591 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage, High Reliability D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V


    Original     		NTE2591 NTE2591 NTE259 PDF

    NTE2590

    Abstract: No abstract text available
    Text: NTE2590 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage, High Reliability D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V


    Original     		NTE2590 NTE2590 PDF