A18 sot
Abstract: sot-89 Marking GK rtb4 marking sot223 GY RT9161-33CX A9 sot223 AMP marking c7 sot-89 RT9161-18CX RT9161-26CV RT9161-33CV
Text: RT9161/A 300/500mA Low Dropout Linear Voltage Regulator General Description Features The RT9161/A is a 300/500mA fixed output voltage z Low Dropout Voltage of 200mV at Output low dropout linear regulator. Typical ground current Current 100mA, 450mV at Output Current
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RT9161/A
300/500mA
RT9161/A
200mV
100mA,
450mV
300mA,
750mV
500mA
A18 sot
sot-89 Marking GK
rtb4
marking sot223 GY
RT9161-33CX
A9 sot223
AMP marking c7 sot-89
RT9161-18CX
RT9161-26CV
RT9161-33CV
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A6W 76
Abstract: 99LSB
Text: JULY 3,1996 TEST REPORT #96032 QUALIFICATION TESTING PART NUMBER TSM-125-Ol-F-DV CLH-125-L-D-DV CERTIFICATION This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It was performed with the concurrence of Samtec Corporation
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TSM-125-Ol-F-DV
CLH-125-L-D-DV
10012-l
CLH-125-L-D-DV
A6W 76
99LSB
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MH4M32ANXJ
Abstract: 464W aatj CZL a6
Text: MITSUBISHI LS Is <DRAM MODULE FAST PAGE MODE DYNAMIC RAM 4M X 32 I £ O M: 128 BIT Max. Access T ype name Load m em ory tim e O u tw a rd d im e n sio n s Data sheet W X H X D m m ) page (ns) MH4M32AATJ-6 ★ 60 MH4M32AATJ-7 ★ 70 MH4M32AXJ-6 ★ M H4M32ANXJ-6
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MH4M32AATJ-6
MH4M32AATJ-7
MH4M32AXJ-6
H4M32ANXJ-6
MH4M32AXJ-7
MH4M32ANXJ-7
17400A
7400A
134217728-BIT
MH4M32ANXJ
464W
aatj
CZL a6
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A1719
Abstract: 1m x 8 sram
Text: "7 05*5 5 ^ . 1M x 8 SRAM DIL MODULE S Y iita q SYS81000FKX-55/70/85/10/12 limited 1,048,576 x 8 CMOS Static RAM Module Issue 2.0 : August 1994 Description j Features ] Access Times of 55/70/85/100/120 ns. 36 Pin JEDEC standard Dual-ln-Line package. The SYS81000FKX is a plastic 8M Static RAM
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SYS81000FKX-55/70/85/10/12
SYS81000FKX
120ns
YS81OOOFKX-55/7085/10/12
SYS81000FKX
LI-10
A1719
1m x 8 sram
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HY57V164010B
Abstract: HY57V164010BTC-10 HY57V164010
Text: - H Y U H O f l l - , H Y 57V 164010B 2 B anks x 2 M x 4 B it S ynchronou s DRAM DESCRIPTION The Hyundai HY57V164010B is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited tor the main memory applications which require large memory density and high bandwidth. HY57V164010B is organized as 2banks of
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164010B
HY57V164010B
216-bits
152x4.
HY57V164Q10B
400mil
44pin
1SD30-
0-DEC97
HY57V164010BTC-10
HY57V164010
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Untitled
Abstract: No abstract text available
Text: THI S DRAWING IS UNPUBLISHED. COP YR I G H T 2011 RELEASED FOR PUBLI CATI ON ALL RIGHTS REVISIONS RESERVED. LTR DESCRIPTION DATE DWN APVD [10 R e l e a s e d as per CCR-10-0 05249 10MAR2 0 10 DMK RRP E11 NEW P /N 9 - 1 9 55 5 0 6 -2 AND 0 - 1 9 55 5 0 7 -4 ADDED
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CCR-10-0
10MAR2
290CT2010
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Untitled
Abstract: No abstract text available
Text: Preliminary CAT28HT256 E x te n d e d T e m p e r a tu r e : 1 7 0 ° C 256K-Bit CMOS E2PR0M FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 10ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive: 30 mA Max.
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CAT28HT256
256K-Bit
CAT28HT256
28C257
28HT256
CAT28HT256HFNI-20TE7
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Untitled
Abstract: No abstract text available
Text: CAT28C65B 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: - 120/150/200ns ■ Commercial, Industrial and Automotive Tern perature Ranges ■ Low Power CMOS Dissipation: - Active: 25 mA Max. - Standby: 100 fiA Max. ■ Automatic Page Write Operation:
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CAT28C65B
64K-Bit
120/150/200ns
CAT28C65B
28C65B
CAT28C65BHFNI-20TE7
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SPR128
Abstract: narrator sp0256 SP0264 DSR 505 MC1316 sp0256b Microchip Speech 35D8 SP025
Text: SP0264 M icrochip NARRATOR SPEECH PROCESSOR FEATURES DESCRIPTION • Natural speech • On-chlp 64K bit ROM • Stand alone operation with Inexpensive support components • Wide operating voltage • Word, phrase or sentence library, ROM expandable • Directly expandable to a total of 480K ROM
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SP0264
SP0256B
DS50012C-12
SPR128
narrator
sp0256
SP0264
DSR 505
MC1316
Microchip Speech
35D8
SP025
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a10157
Abstract: CZL - A8 M28LV16 PDIP28 PLCC32 S028 ZDA10
Text: S G S -T H O M S O N ^ 7 /» M 28LV17 M [ M S E [ L I ç n ïïM 5 [ iïïD ( S § LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 150ns ■ SINGLE 3 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 8mA
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M28LV17
150ns
M28LV17
PLCC32
a10157
CZL - A8
M28LV16
PDIP28
PLCC32
S028
ZDA10
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CZL - A8
Abstract: No abstract text available
Text: M IT S U B IS H I LSlS MH25632XJ-7,-8/ MH25632SXJ-7.-8 FAST PAGE MODE 8388608-BIT 262144-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION M H 2 5 6 3 2 X J /S X J is 2 6 2 1 4 4 -word by 3 2 -b it dynamic RAM •nodule. This consists of two industry standard 256K x 16bit
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MH25632XJ-7
MH25632SXJ-7
8388608-BIT
262144-WORD
32-BIT
16bit
H25632XJ-7
CZL - A8
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Untitled
Abstract: No abstract text available
Text: X X28HC256 256K p r 32K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 70ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V p p Control
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X28HC256
00Q4h35
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V32AFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32 Mbit 4 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V32 device is a single volt 32 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.
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TC58V32AFT
TC58V32
44/40-P-400-0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V32ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 Mbit 4 M x 8 bit CMOS NAND E2PROM (4M BYTE Sm artM edia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32ADC
TC58V32ADC
32MByte
FDC-22A
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upa64
Abstract: UPA128 STP221
Text: S un M icroelectronics July 1997 u se Uniprocessor System Controller DATA SHEET D e s c r ip t io n The Uniprocessor System Controller USC has a DRAM memory controller and functions to regulate the flow of requests and data on the UPA bus. It also controls the resets going to all UPA clients.
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SS-10/SS-20-type
128-MB
225-pin
STP2200ABGA-83
STP2200ABGA-100
upa64
UPA128
STP221
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SmartMedia Logical Format
Abstract: TH58V128DC
Text: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and
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TH58V128DC
TH58V128DC
32MByte
FDC-22C
SmartMedia Logical Format
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TH58V128FT
Abstract: TH58
Text: TOSHIBA TH58V128FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128 Mbit 16 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TH58V128 device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPR O M ) organized as 528 bytes X 32 pages X 1024 blocks.
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TH58V128FT
TH58V128
TSOPII44
40-P-400-0
TH58V128FT
TH58
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TC58V64DC
Abstract: SmartMedia Logical Format SmartMedia Logical Format ID maker code
Text: TOSHIBA TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M x 8 bit CMOS NAND E2PROM (8M BYTE Sm artM edia ) DESCRIPTION The TC58V64DC device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and
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TC58V64DC
32MByte
FDC-22A
SmartMedia Logical Format
SmartMedia Logical Format ID maker code
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Untitled
Abstract: No abstract text available
Text: Lattice is ;Semiconductor I Corporation L S I3 1 6 0 High Density Programmable Logic Features • HIGH-DENSITY PROGRAMMABLE LOGIC — 160 I/O Pins — 7000 PLD Gates — 320 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State
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MR 4710 IC
Abstract: KL SN 102 lcd MR 4710 ks 4290 317 jrc SAA 1350 LM 1405 1470 LM jrc 317 IC JRC 2910
Text: NJU6679 128 = J ^ E > x If V •m b "? 1 3 2 - iz ^ 'y 3? L C D æ > h /< ■ n NJU6679 i t . 128^> x 132-ttf* m ? h7?7’ LCDT 7 ^ * t t 0 COLCDh* 7ÏA* lis 25, 344tf îih 7 Â^f* -$RAM. CPU<i>*-7i<iJl[I&, i'A - V i i t f f P T ? 1 8 j £ £ f r W ifrj/W
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NJU6679
132-fe
J283t
-ToNJU6679
NJU6679
SEL68Vdd
MR 4710 IC
KL SN 102 lcd
MR 4710
ks 4290
317 jrc
SAA 1350
LM 1405
1470 LM
jrc 317
IC JRC 2910
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10 HP CAPACITOR START SINGLE PHASE motor WIRING DIAGRAM
Abstract: 50387-001 1 HP SINGLE PHASE induction motor wiring diagram klixon start relay motor transistor 431A Allen-Bradley 1388 KLIXON Thermal Overload Relay B7 3 hp 1500 rpm a.c. induction motor winding data TRANSISTOR 1FU ac induction motor direct torque control using fu
Text: ALLEN-BRADLEY A R D C K W E L L IN T E R N A T IO N A L C O M P A N Y Instruction Manual Bulletin 1334 15 thru 50 HP 575V Adjustable Frequency A C Motor Drives P rice: $2 Important User Information Because of the variety of uses for this equipm ent and because of the
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20i407-040
10 HP CAPACITOR START SINGLE PHASE motor WIRING DIAGRAM
50387-001
1 HP SINGLE PHASE induction motor wiring diagram
klixon start relay motor
transistor 431A
Allen-Bradley 1388
KLIXON Thermal Overload Relay B7
3 hp 1500 rpm a.c. induction motor winding data
TRANSISTOR 1FU
ac induction motor direct torque control using fu
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buzzer obo
Abstract: HD4074719H PKW-3100 R90-R93 441L204
Text: H D 4 0 4 7 1 0 S e rie s Description The HD404710 Series 4-bit single-chip microcom puters incorporate five timers, two serial interfaces, an A/D converter, an input capture timer, and an output compare timer. They also include a 32.768kH z oscillator and low-power dissipation modes.
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HD404710
768kHz
HD4074710
HD404719
HD4074719,
384-word
buzzer obo
HD4074719H
PKW-3100
R90-R93
441L204
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet July 1997 m icroelectronics group Lucent Technologies Bell Labs Innovations LUC3M08 Eight Ethernet MACs for 10/100 Mbits/s Frame Switching Features • Eight 10/100 Mbits/s Ethernet MACs integrated together with separate transmit and receive port
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LUC3M08
10Base-T,
100Base-T4,
64-bit,
DS96-124LAN
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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