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    ZDA10 Search Results

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    ZDA10 Price and Stock

    Central Semiconductor Corp CMSZDA10V-TR-PBFREE

    DIODE ZENER 10V 275MW SOT323
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    DigiKey CMSZDA10V-TR-PBFREE Cut Tape 2,622 1
    • 1 $0.56
    • 10 $0.398
    • 100 $0.56
    • 1000 $0.19
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    CMSZDA10V-TR-PBFREE Digi-Reel 2,622 1
    • 1 $0.56
    • 10 $0.398
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    CMSZDA10V-TR-PBFREE Reel 3,000
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    • 10000 $0.1849
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    Central Semiconductor Corp CMPZDA10V TR

    Diode Zener 10V 5% 350mW 3-Pin SOT-23 T/R - Tape and Reel (Alt: CMPZDA10V TR)
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    Avnet Americas CMPZDA10V TR Reel 3,000
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    Central Semiconductor Corp CMPZDA10V TR TIN/LEAD

    Diode Zener Array Dual Common Anode 10V 350mW 3-Pin SOT-23 T/R - Tape and Reel (Alt: CMPZDA10V TR TIN/LEAD)
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    Avnet Americas CMPZDA10V TR TIN/LEAD Reel 15,000
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    Mouser Electronics CMPZDA10V TR TIN/LEAD
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    Central Semiconductor Corp CMSZDA10V TR

    - Tape and Reel (Alt: CMSZDA10V TR)
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    Avnet Americas CMSZDA10V TR Reel 3,000
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    Central Semiconductor Corp CMPZDA10V TR PBFREE

    Diode Zener Array Dual Common Anode 10V 350mW 3-Pin SOT-23 T/R - Tape and Reel (Alt: CMPZDA10V TR PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CMPZDA10V TR PBFREE Reel 9,000
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    • 10000 $0.08586
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    Mouser Electronics CMPZDA10V TR PBFREE
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    • 10000 $0.098
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    ZDA10 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZDA10 Semitronics Medium Power Zener and Avalanche Diodes Scan PDF
    ZDA100 Semitron 100V, 1.5Wt General purpose voltage reference/regulator diode Scan PDF

    ZDA10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    N341256

    Abstract: N341256P15 N341256SJ N341256SJ-15 41256 n341256p20 n341256s N341256SJ12 41256 ram N341256SJ15
    Text: CMOS SRAM Jw NKK N341256 256K-BIT 32KX8 • Features • CMOS SRAM organized as 32,768 x Sbits • Single +5.0V(+10% ) Power Supply • High Speed A ccess time : 12/15/20/25ns • Low power operation Active : 180mA(max.) 28pin Plastic DIP(300m il) Standby : 60m A(m ax.)


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    256K-BIT 32KX8) N341256 12/15/20/25ns 180mA -28pin 300mil) N341256 N341256P15 N341256SJ N341256SJ-15 41256 n341256p20 n341256s N341256SJ12 41256 ram N341256SJ15 PDF

    T1A13

    Abstract: T1A1 "t1A13"
    Text: r j m 23000 CMOS ROMs Series •Low Power »High Performance Features Late mask programmable for quick turn limes • Six JEDEC standard versions +3 volt power supply option available IMP23L128 28 pin 128K 16,384 word x 8 bit IMP23L256 28 pin 256K 32,768 word x 8 bit


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    IMP23L128 IMP23L256 IMP23L512 IMP23L100 IMP23L101 IMP23L102 T1A13 T1A1 "t1A13" PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58V1001 Series Preliminary 131,072-word x 8-bit Electrically Erasable and Programmable CMOS ROM The Hitachi HN58V1001 is a electically erasable and p rogram m able EEPROM organized as 131072-word x 8-bit. It realizes high speed, low power consumption, and a high level of reliability,


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    HN58V1001 072-word 131072-word 128-byte HN58V1001P-25 32-pin DP-32) HN58V1001FP-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN624316 Series 1,048,576-word x 16-bit / 2,097,152 x 8-bit CMOS Programmable Mask ROM HITACHI T he H N 6 2 4 3 16 is a 16 -M b it CM O S Program m able M ask ROM organized either as 1,048,576 words by 16 bits or as 2,097,152 words by 8 bits. Realizing low power consumption, this


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    HN624316 576-word 16-bit HN624316P-12 HN624316P-15 HN624316FB-12 42-pin DP-42) 44-pin FP-44D) PDF

    HM-65262C-5

    Abstract: c9285
    Text: 4RE » • SôtôMSb DDG1307 SSI ■ H M H S _ _ Ììllll I r T H I MATRA M H S September 1990 "T = - 4 { û - 2 J ï r - C Ô HM 65262 DATASHEET 16 k X 1 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max COMMERCIAL : 55/70 ns (max)


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    DDG1307 HM65262_ 16kx1 HM-65262C-5 c9285 PDF

    rockwell eprom

    Abstract: 1519Q
    Text: R2764 Memory Products 003798 R2764 64K 8K X 8 UV EPROM * Rockwell Preliminary FEATURES DESCRIPTION • 8192 x 8 organization The Rockwell R2764 is a 5V only, 8K x 8 (65,536 bits) ultraviolet (UV) light erasable programmable read-only-memory (EPROM). It is manufactured using n-channel floating gate EPROM tech­


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    R2764 28-pin R2764 rockwell eprom 1519Q PDF

    0a0c1

    Abstract: No abstract text available
    Text: Features * Single Voltage Operation - 5V Read - 5V Reprogramming * Fast Read Access Tim e - 90 ns * Internal Program Control and Tim er * 8K Bytes Boot Block With Lockout * Fast Erase Cycle Tim e - 1 0 seconds * Byte-By-Byte Programming - 50 ps/Byte * Hardware Data Protection


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    AT49F020 0567C-- 10/98/xM 0a0c1 PDF