TSOPII-44
Abstract: No abstract text available
Text: TSOPII44/40-P-400-0.80-K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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TSOPII44/40-P-400-0
TSOPII-44
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Untitled
Abstract: No abstract text available
Text: TSOPII44-P-400-0.80-K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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TSOPII44-P-400-0
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Untitled
Abstract: No abstract text available
Text: TSOPII44-P-400-0.80-1K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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TSOPII44-P-400-0
80-1K
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MSM5416258A
Abstract: msm5416258
Text: E2L0047-28-Z2 This version: Dec. 1998 MSM5416258A Previous version: Jan. 1998 ¡ Semiconductor MSM5416258A ¡ Semiconductor 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's CMOS silicon gate
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E2L0047-28-Z2
MSM5416258A
144-Word
16-Bit
MSM5416258A
msm5416258
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MSM534032E
Abstract: 44-PIN
Text: Semiconductor MSM534032E 262,144-Word x 16-Bit or 524,288-Word x 8-Bit MASKROM DESCRIPTION The OKI MSM534032E is a high-speed CMOS Mask ROM that can electrically switch between 262,144-word x 16-bit and 524,288-word x 8-bit configurations. The MSM534032E operates on a single 3.0V or 3.3V power supply but offers the same fast access times as
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MSM534032E
144-Word
16-Bit
288-Word
MSM534032E
44-PIN
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DIN11
Abstract: MSM548332
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM548332
TSOPII44-P-400-0
DIN11
MSM548332
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DIP42-P-600-2
Abstract: MR53V1602J MR53V1602J-XXMA MR53V1602J-XXRA MR53V1602J-XXTP
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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MR53V1602J
576-Word
16-Bit
152-Word
100ns
DIP42-P-600-2
MR53V1602J-XXRA
OP44-P-600-1
MR53V1602J-XXMA
MR53V1602J
MR53V1602J-XXMA
MR53V1602J-XXRA
MR53V1602J-XXTP
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General Electric C 524 k
Abstract: MR53V8052J-XXRA DIP42-P-600-2 MR53V8052J MR53V8052J-XXMA MR53V8052J-XXTP
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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D-41460
General Electric C 524 k
MR53V8052J-XXRA
DIP42-P-600-2
MR53V8052J
MR53V8052J-XXMA
MR53V8052J-XXTP
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TDS1012
Abstract: MSM521218
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2I0029-17-Y1
MSM521218
536-Word
18-Bit
MSM52121865
18CMOSRAM3
MSM521218CEI/O
230mAMax.
210mAMax.
TDS1012
MSM521218
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DIP42-P-600-2
Abstract: MR53V8002J MR53V8002J-XXMA MR53V8002J-XXRA MR53V8002J-XXTP
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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D-41460
DIP42-P-600-2
MR53V8002J
MR53V8002J-XXMA
MR53V8002J-XXRA
MR53V8002J-XXTP
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MSM548263
Abstract: SOJ40 TFSC
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2L0017-17-Y1
MSM548263
MSM548263
144-Word
MSM548263262
RAM256K
SAM512
5128ms
40400milSOJSOJ40-P-400-1
MSM548263-xxJS
SOJ40
TFSC
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MSM52V1016LP
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2I0019-17-Y1
MSM52V1016LP
MSM52V1016LP
536-Word
16-Bit
MSM52V1016LP65
16CMOSRAM-4085
CMOS100ns
50mAMax
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MR27V3202E
Abstract: 00FF MR27V3202EMA MR27V3202ETP
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FJDR27V3202E-01-01
MR27V3202E
152-Word
16-Bit
304-Word
MR27V3202E
OP44-P-600-1
TSOPII44-P-400-0
MR27V3202EMA)
00FF
MR27V3202EMA
MR27V3202ETP
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MSM548262
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM548262
TSOPII44/40-P-400-0
MSM548262
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UC62LS4096
Abstract: U-Chip Technology
Text: Low Power CMOS SRAM 256K X 16 UC62LS4096 -20/-25 Description Features: • Vcc operation voltage : 3.0 V~ 3.6V • Low power consumption : 20mA Max. operating current 2uA (Typ.) CMOS standby current • High Speed Access time : 25ns (Max.) at Vcc = 3.0V
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UC62LS4096
UC62LS4096
U-Chip Technology
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HYS64V4120GU-10
Abstract: HYS72V4120GU-10
Text: 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V4120GU-10 HYS72V4120GU-10 168 pin unbuffered DIMM Modules • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications • 2 bank 4M x 64, 4M x 72 organisation
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64-Bit
72-Bit
HYS64V4120GU-10
HYS72V4120GU-10
L-DIM-168-25
HYS64
V4120GU-10
DM168-25
HYS64V4120GU-10
HYS72V4120GU-10
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HYS64V2100G
Abstract: No abstract text available
Text: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2100G C U-10 HYS72V2100G(C)U-10 168 pin unbuffered DIMM Modules • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications • 1 bank 2M x 64, 2M x 72 organisation
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64-Bit
72-Bit
HYS64V2100G
HYS72V2100G
DM168-27
HYS64
V2100G
L-DIM-168-C1
DM168-C1
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MSM5416125A
Abstract: No abstract text available
Text: E2L0049-17-Y1 ¡ Semiconductor MSM5416125A ¡ Semiconductor This version: Jan. 1998 MSM5416125A Previous version: Dec. 1996 131,072-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The OKI MSM5416125A is a 128K-word ¥ 16-bit dynamic RAM fabricated in OKI's CMOS silicon
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E2L0049-17-Y1
MSM5416125A
072-Word
16-Bit
MSM5416125A
128K-word
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MSM521218
Abstract: No abstract text available
Text: J2I0029-17-Y1 ¡ 電子デバイス 作成：1998年 1月 MSM521218 ● 前回作成：1996年 8月 MSM521218 暫定 65,536-Wordx18-Bit CMOS STATIC RAM n 概要 単一電源で動
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J2I0029-17-Y1
MSM521218
536-Word
18-Bit
MSM52121865
18CMOSRAM3
MSM521218CEI/O
230mAMax.
210mAMax.
MSM521218
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Untitled
Abstract: No abstract text available
Text: TSOPII44-P-400-0.80H 44 Unit : mm 23
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TSOPII44-P-400-0
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s2mX
Abstract: No abstract text available
Text: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation • Optimized for byte-write non-parity or ECC applications
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64-Bit
72-Bit
HYS64V2000GU
HYS72V2000GU
HYS64
V2000GU
s2mX
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3tr5
Abstract: active suspension MSM56V16800D MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15 wf vqc 10 d a6 56V16800
Text: O K I Semiconductor M SM 56V16800D/DH E2G1047-17-94 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM D E SCRIPTIO N The M SM 56V16800D/DH is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The
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MSM56V16800D/DH
576-Word
E2G1047-17-94
56V16800D/DH
cycles/64
3tr5
active suspension
MSM56V16800D
MSM56V16800D-10
MSM56V16800D-12
MSM56V16800DH-15
wf vqc 10 d a6
56V16800
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55V8512J/FT-12,-15.-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-W O R D BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288
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TC55V8512J/FT-12
TC55V8512J/FT
304-bit
SOJ36-P-400-1
44-P-400-0
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SEM t11
Abstract: 39S16800 39S16800AT-8 Q1323 q1333
Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command
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HYB39S1640x/80x/16xAT-8/-10
16MBit
P-TSOPI-44
400mil
SEM t11
39S16800
39S16800AT-8
Q1323
q1333
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