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    CY7C162 Price and Stock

    Cypress Semiconductor CY7C1620KV18-250BZXC

    NO WARRANTY
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    DigiKey CY7C1620KV18-250BZXC Tray 400 1
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    Rochester Electronics CY7C1620KV18-250BZXC 1 1
    • 1 $244.19
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    Flip Electronics CY7C1620KV18-250BZXC 620
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    Cypress Semiconductor CY7C1625KV18-250BZXC

    NO WARRANTY
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    DigiKey CY7C1625KV18-250BZXC Tray 61 1
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    Rochester Electronics CY7C1625KV18-250BZXC 4 1
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    Flip Electronics CY7C1625KV18-250BZXC 4,300
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    Cypress Semiconductor CY7C1625KV18-250BZXI

    NO WARRANTY
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    DigiKey CY7C1625KV18-250BZXI Tray 40 1
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    Rochester Electronics CY7C1625KV18-250BZXI 10 1
    • 1 $244.19
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    Rochester Electronics LLC CY7C1623KV18-250BZXC

    IC SRAM 144MBIT PAR 165FBGA
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    DigiKey CY7C1623KV18-250BZXC Bulk 2
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    Infineon Technologies AG CY7C1623KV18-250BZXC

    IC SRAM 144MBIT PAR 165FBGA
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    DigiKey CY7C1623KV18-250BZXC Tray
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    CY7C162 Datasheets (124)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C162 Cypress Semiconductor 16K x 4 Static RAM with Separate I/O Original PDF
    CY7C1620KV18-250BZXC Cypress Semiconductor Integrated Circuits (ICs) - Memory - IC SRAM 144M PARALLEL 165FBGA Original PDF
    CY7C1620KV18-333BZXI Cypress Semiconductor Integrated Circuits (ICs) - Memory - IC SRAM 144M PARALLEL 165FBGA Original PDF
    CY7C162-10DC Cypress Semiconductor 16,384 x 4 Static R/W RAM Separate I/O Scan PDF
    CY7C162-10LC Cypress Semiconductor 16,384 x 4 Static R/W RAM Separate I/O Scan PDF
    CY7C162-10PC Cypress Semiconductor 16,384 x 4 Static R/W RAM Separate I/O Scan PDF
    CY7C162-10VC Cypress Semiconductor 16,384 x 4 Static R/W RAM Separate I/O Scan PDF
    CY7C162-12DC Cypress Semiconductor 16,384 x 4 Static R/W RAM Separate I/O Scan PDF
    CY7C162-12LC Cypress Semiconductor 16,384 x 4 Static R/W RAM Separate I/O Scan PDF
    CY7C162-12PC Cypress Semiconductor 16K x 4 Static RAM with Separate I/O Original PDF
    CY7C162-12PC Cypress Semiconductor 16K x 4 Static RAM with Separate I/O Scan PDF
    CY7C162-12PC Cypress Semiconductor 16,384 x 4 Static R/W RAM Separate I/O Scan PDF
    CY7C162-12VC Cypress Semiconductor 16K x 4 Static RAM with Separate I/O Original PDF
    CY7C162-12VC Cypress Semiconductor 16,384 x 4 Static R/W RAM Separate I/O Scan PDF
    CY7C162-12VC Cypress Semiconductor 16K x 4 Static RAM with Separate I/O Scan PDF
    CY7C162-15DC Cypress Semiconductor 16,384 x 4 Static R/W RAM Separate I/O Scan PDF
    CY7C162-15LC Cypress Semiconductor 16,384 x 4 Static R/W RAM Separate I/O Scan PDF
    CY7C162-15PC Cypress Semiconductor 16K x 4 Static RAM with Separate I/O Original PDF
    CY7C162-15PC Cypress Semiconductor 16,384 x 4 Static R/W RAM Separate I/O Scan PDF
    CY7C162-15PC Cypress Semiconductor 16K x 4 Static RAM with Separate I/O Scan PDF
    ...

    CY7C162 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CY7C161

    Abstract: CY7C162 C1624
    Text: CY7C161 CY7C162 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 65% when deselected.


    Original
    CY7C161 CY7C162 15-ns 7C161) CY7C161 CY7C162 C1624 PDF

    CY7C1620KV18-250BZXC

    Abstract: No abstract text available
    Text: CY7C1618KV18, CY7C1620KV18 144-Mbit DDR II SRAM Two-Word Burst Architecture 144-Mbit DDR II SRAM Two-Word Burst Architecture Features Configuration • 144-Mbit density 8 M x 18, 8 M × 36 CY7C1618KV18 – 8 M × 18 ■ 333 MHz clock for high bandwidth


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    CY7C1618KV18, CY7C1620KV18 144-Mbit CY7C1618KV18 CY7C1620KV18-250BZXC PDF

    C1623

    Abstract: C1624 c162 c1627 C1622 CY7C161 CY7C162 C1628 C1625
    Text: 1CY 7C16 2 CY7C161 CY7C162 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 65% when deselected.


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    CY7C161 CY7C162 15-ns 7C161) C1623 C1624 c162 c1627 C1622 CY7C161 CY7C162 C1628 C1625 PDF

    cmos SRAM 35ns 8k X 8 dip

    Abstract: 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164
    Text: Qualification Report January 1992 QTP 91094 64K SRAM FAMILY MARKETIN G DEVICE PART NBR DESCRIPTION CY7C161 16K x 4 SIO CY7C162 16K x 4 (SIO) CY7C164 16K x 4 CY7C166 (OE) CY7C185 8K x 8 CY7C186 8K x 8 (.6 DIP) CY7C187 64K x 1 Version 1.2 PRODUCT DESCRIPTION (for qualification)


    Original
    CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 Cypr507/1 200mA cmos SRAM 35ns 8k X 8 dip 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164 PDF

    CY7C161A

    Abstract: CY7C162A A5624 cy7c161a-35dmb
    Text: CY7C161A CY7C162A 16KĂxĂ4 Static RAM with Separate I/O into the memory location specified on the Features Functional Description D The CY7C161A and CY7C162A are highĆ performance CMOS static RAMs orgaĆ nizes as 16,384 by 4 bits with separate I/O. Easy memory expansion is provided by acĆ


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    CY7C161A CY7C162A 16Kx4 7C162A CY7C161A CY7C162A A5624 cy7c161a-35dmb PDF

    C1623

    Abstract: C1624 C1627 C1622 c1628 C162 CY7C161 CY7C162 7C162 C1625
    Text: CY7C161 CY7C162 16KĂxĂ4 Static RAM with Separate I/O Features Functional Description D The CY7C161 and CY7C162 are highĆperĆ formance CMOS static RAMs organized as 16,384 by 4 bits with separate I/O. Easy memory expansion is provided by active LOW chip enables CE1, CE2 and threeĆ


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    CY7C161 CY7C162 16Kx4 7C162 CY7C161 CY7C162 C1623 C1624 C1627 C1622 c1628 C162 C1625 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1618KV18, CY7C1620KV18 144-Mbit DDR II SRAM Two-Word Burst Architecture 144-Mbit DDR II SRAM Two-Word Burst Architecture Features Configuration • 144-Mbit density 8 M x 18, 8 M × 36 CY7C1618KV18 – 8 M × 18 ■ 333 MHz clock for high bandwidth


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    CY7C1618KV18, CY7C1620KV18 144-Mbit CY7C1618KV18 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1625KV18 CY7C1612KV18, CY7C1614KV18 144-Mbit QDR II SRAM 2-Word Burst Architecture 144-Mbit QDR ® II SRAM 2-Word Burst Architecture Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions CY7C1625KV18 – 16 M x 9


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    144-Mbit CY7C1625KV18 CY7C1612KV18, CY7C1614KV18 CY7C1625KV18 CY7C1612KV18 333-MHz PDF

    3M Touch Systems

    Abstract: No abstract text available
    Text: CY7C1623KV18 144-Mbit DDR-II SIO SRAM Two-Word Burst Architecture 144-Mbit DDR-II SIO SRAM Two-Word Burst Architecture Features Configuration • 144-Mbit density 8 M x 18 CY7C1623KV18 – 8 M × 18 ■ 333 MHz clock for high bandwidth Functional Description


    Original
    CY7C1623KV18 144-Mbit 3M Touch Systems PDF

    CY7C161A

    Abstract: CY7C162A
    Text: CY7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.


    Original
    CY7C161A CY7C162A 7C161A) 38-00116-C 28-Lead 300-Mil) 28-Pin MIL-STD-1835 CY7C161A CY7C162A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1625KV18 CY7C1612KV18 CY7C1614KV18 144-Mbit QDR II SRAM Two-Word Burst Architecture 144-Mbit QDR ® II SRAM Two-Word Burst Architecture Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions CY7C1625KV18 – 16 M x 9


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    CY7C1625KV18 CY7C1612KV18 CY7C1614KV18 144-Mbit 360-MHz PDF

    CY7C1614KV18

    Abstract: CY7C1612KV18-300BZXI CY7C1614KV18-250BZXC CY7C1612KV18
    Text: CY7C1610KV18, CY7C1625KV18 CY7C1612KV18, CY7C1614KV18 ADVANCE INFORMATION 144-Mbit QDR -II SRAM 2-Word Burst Architecture Features Configurations • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 333 MHz clock for high bandwidth


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    CY7C1610KV18, CY7C1625KV18 CY7C1612KV18, CY7C1614KV18 144-Mbit CY7C1610KV18 CY7C1625KV18 CY7C1612KV18 CY7C1614KV18 CY7C1612KV18-300BZXI CY7C1614KV18-250BZXC CY7C1612KV18 PDF

    CY7C1614KV18

    Abstract: CY7C1612KV18-300BZXI
    Text: CY7C1610KV18, CY7C1625KV18 CY7C1612KV18, CY7C1614KV18 144-Mbit QDR II SRAM 2-Word Burst Architecture 144-Mbit QDR ® II SRAM 2-Word Burst Architecture Features Configuration Separate independent read and write data ports ❐ Supports concurrent transactions


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    144-Mbit CY7C1610KV18, CY7C1625KV18 CY7C1612KV18, CY7C1614KV18 CY7C1610KV18 CY7C1625KV18 CY7C1612KV18 CY7C1614KV18 CY7C1612KV18-300BZXI PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1611KV18, CY7C1626KV18 CY7C1613KV18, CY7C1615KV18 144-Mbit QDR II SRAM 4-Word Burst Architecture 144-Mbit QDR ® II SRAM 4-Word Burst Architecture Features Configuration Separate independent read and write data ports ❐ Supports concurrent transactions


    Original
    144-Mbit CY7C1611KV18, CY7C1626KV18 CY7C1613KV18, CY7C1615KV18 CY7C1611KV18 CY7C1626KV18 CY7C1613KV18 PDF

    7cl6

    Abstract: D-2501 CY7C161A CY7C162 CY7C162A
    Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power


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    CY7C161A CY7C162A 7C161A) CY7C162 au62A-35DMB CY7C162Aâ 35KMB CY7C162A-35LMB CY7C162A-45DMB 7cl6 D-2501 CY7C162A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161 CY7C162 16Kx 4 Static RAM with Separate I/O Features into the memory location specified on the address pins Ao through A13 . Reading the device is accomplished by tak­ ing the chip enables (CEi, CE2) LOW while write enable (WE) remains HIGH. Under these conditions the contents of the


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    CY7C161 CY7C162 15-ns 7C161) CY7C162arehigh-performance PDF

    ID14771

    Abstract: C1626 A10C A12C CY7C161 CY7C162 V21 PACKAGE DIAGRAM
    Text: CY7C161 CY7C162 16K x 4 Static RAM with Separate I/O CYPRESS Features • High speed — 15-ns • Transparent write 7C161 • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 220 mW • TTL compatible inputs and outputs


    OCR Scan
    CY7C161 CY7C162 15-ns 7C161) 300-Mil) CY7C161â 28-Lead CY7C162-12PC ID14771 C1626 A10C A12C V21 PACKAGE DIAGRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A CY7C162A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese­ lected • T ransparent write 7C161A • CMOS for optim um speed/power • High speed - 15 ns t* • Low active power - 550 mW • Low standby power - 220 mW • TTL-compatible inputs and outputs


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    CY7C161A CY7C162A 7C161A) 7C162A chiY7C161A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A CY7C162A CYPRESS SEMICONDUCTOR Features Functional Description • High speed The CY7C161A and CY7C162A are highperformance CMOS static RAMs orga­ nizes as 16,384 by 4 bits with separate I/O. Easy memory expansion is provided by ac­ tive LOW chip enables C E i, CE2 and


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    CY7C161A CY7C162A 7C162A CY7C162A PDF

    CY7C161

    Abstract: CY7C162 CY7C162-25VC
    Text: CY7C161 CY7C162 16K x 4 Static RAM with Separate I/O CYPRESS Features • High speed — 15-ns • Transparent write 7C161 • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 220 mW • TTL compatible inputs and outputs


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    CY7C161 CY7C162 15-ns 7C161) CY7C162 CY7C162-12PC 28-Lead 300-Mil) CY7C162- CY7C162-25VC PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161 CY7C162 CYPRESS SEMICONDUCTOR F e a tu re s • A u tom atic pow er-dow n w hen d eselected • T ran sparen t w rite 7C 161 • C M O S for op tim u m sp eed /p ow er • H igh speed • Low active pow er • Low stan d b y power • TT L c o m p a tib le in p u ts and ou tp u ts


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    CY7C161 CY7C162 62-20L 2-25V 2-35V PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A CY7C162A CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • High speed The C Y 7C161A and C Y 7C162A are highperform ance C M O S static R A M s orga­ nizes as 16,384 by 4 bits w ith sep a ra te I/O . Easy m em ory expansion is provided by ac­


    OCR Scan
    CY7C161A CY7C162A 7C161A 7C162A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161 CY7C162 CYPRESS SEMICONDUCTOR Features Functional Description • High speed — 15-ns T he CY7C161 an d CY 7C162 are high-per­ form ance C M O S static R A M s organized as 16,384 by 4 bits w ith sep a ra te I/O . Easy m em ory expansion is provided by active


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    CY7C161 CY7C162 15-ns CY7C161 7C162 28-Lead 300-M 28-Lead 7C162â PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161 CY7C162 CYPRESS Features • High speed — 15-ns • Transparent write 7C16I • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 220 mW • TTL compatible inputs and outputs • Automatic power-down when deselected


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    15-ns CY7C161 CY7C162 --15PC --15V --20V --25P --35P --35V PDF