cmos SRAM 35ns 8k X 8 dip
Abstract: 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164
Text: Qualification Report January 1992 QTP 91094 64K SRAM FAMILY MARKETIN G DEVICE PART NBR DESCRIPTION CY7C161 16K x 4 SIO CY7C162 16K x 4 (SIO) CY7C164 16K x 4 CY7C166 (OE) CY7C185 8K x 8 CY7C186 8K x 8 (.6 DIP) CY7C187 64K x 1 Version 1.2 PRODUCT DESCRIPTION (for qualification)
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CY7C161
CY7C162
CY7C164
CY7C166
CY7C185
CY7C186
CY7C187
Cypr507/1
200mA
cmos SRAM 35ns 8k X 8 dip
7C166
CY7C161
CY7C162
CY7C164
CY7C166
CY7C185
CY7C186
CY7C187
7C164
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CY7C161A
Abstract: CY7C162A A5624 cy7c161a-35dmb
Text: 7C161A CY7C162A 16KĂxĂ4 Static RAM with Separate I/O into the memory location specified on the Features Functional Description D The 7C161A and CY7C162A are highĆ performance CMOS static RAMs orgaĆ nizes as 16,384 by 4 bits with separate I/O. Easy memory expansion is provided by acĆ
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CY7C161A
CY7C162A
16Kx4
7C162A
CY7C161A
CY7C162A
A5624
cy7c161a-35dmb
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81c78
Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M
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2147-35C
2147-45C
2147-45M+
2147-55C
2147-55M
2148-35C
2148-35M
2148-45C
81c78
7C291
5962-8515505RX
27PC256-12
PAL164A
8464C
5C6408
72018
39C10B
MACH110 cross reference
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MSM 6290
Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
MSM 6290
msm 5562
27c256 intel
62c512
AP 2068
27C512 microchip
62256
57C256
27C512 SGS-THOMSON
27C512-150
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CY7C161A
Abstract: CY7C162A
Text: 7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.
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CY7C161A
CY7C162A
7C161A)
38-00116-C
28-Lead
300-Mil)
28-Pin
MIL-STD-1835
CY7C161A
CY7C162A
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27HC642
Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
27HC642
39C10B
PAL22V10APC
CY2254SC-1
7132SA70
93L422AM
7024S15
7130SA25
7C198-45C
7006S
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CY7C161A
Abstract: CY7C162A CY7C161A-25DMB
Text: 1CY 7C16 2A 7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.
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CY7C161A
CY7C162A
7C161A)
CY7C161A
CY7C162A
CY7C161A-25DMB
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7cl6
Abstract: D-2501 CY7C161A CY7C162 CY7C162A
Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p 7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese lected • Transparent write 7C161A • CMOS for optimum speed/power
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CY7C161A
CY7C162A
7C161A)
CY7C162
au62A-35DMB
CY7C162Aâ
35KMB
CY7C162A-35LMB
CY7C162A-45DMB
7cl6
D-2501
CY7C162A
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Untitled
Abstract: No abstract text available
Text: mw CYPRESS Features • High speed — 20 ns tAA • CMOS Tor optim um speed/power • T ran sp aren t write 7C161A • Low active power — 550 mW • Low standby power — 220 mW • TTL-com patible inputs and outputs • Automatic power-down when dese
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7C161A)
CY7C161A
CY7C162A
7C162A
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Untitled
Abstract: No abstract text available
Text: 7C161A CY7C162A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese lected • T ransparent write 7C161A • CMOS for optim um speed/power • High speed - 15 ns t* • Low active power - 550 mW • Low standby power - 220 mW • TTL-compatible inputs and outputs
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CY7C161A
CY7C162A
7C161A)
7C162A
chiY7C161A
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Untitled
Abstract: No abstract text available
Text: 7C161A CY7C162A CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • High speed The C Y 7C161A and C Y 7C162A are highperform ance C M O S static R A M s orga nizes as 16,384 by 4 bits w ith sep a ra te I/O . Easy m em ory expansion is provided by ac
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CY7C161A
CY7C162A
7C161A
7C162A
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Untitled
Abstract: No abstract text available
Text: 7C161A CY7C162A SEMICONDUCTOR Features • Automatic power-down when dese lected • Transparent write 7C161A 16,384 x 4 Static R/W RAM Separate I/O • Capable o f withstanding greater than 2001V electrostatic discharge. is written into the memory location speci
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CY7C161A
CY7C162A
7C161A)
7C162A
--20D
--25DM
--25KMB
--35D
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CY7C161A-15DMB
Abstract: No abstract text available
Text: 7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Functional D escription Features • High speed — 20 nstAA • CMOS for optimum speed/power • Transparent write 7C161A • Low active power — 550 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs
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CY7C161A
CY7C162A
7C161A)
CY7C161A-15DMB
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CY7C161A
Abstract: CY7C162A
Text: CYPRESS SEM IC ONDUCTOR bSE D • ESflTbbS 000^034 40^ « C Y P 7C161A CY7C162A P Y p p trc c ; SEMICONDUCTOR Features Functional Description • High speed — 20 ns tAA • CMOS for optimum speed/power • Transparent write 7C161A • Low active power
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CY7C161A
CY7C162A
7C161A)
IDWEI16!
7C161A
38-00116-B
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tm l54
Abstract: CY7C161A CY7C162A 0CE12
Text: 7C161A CY7C162A 16K x 4 Static RAM with Separate I/O CYPRESS Functional Description Features • High speed — 20 ns t^ A • CMOS for optimum speed/power • Transparent write 7C161A • Low active power — 55« mW • Low standby power — 22« mW
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CY7C161A
CY7C162A
7C161A)
CY7C162Aare
38-00116-C
7C161A
GD147flb
tm l54
CY7C162A
0CE12
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la25p
Abstract: CY7C161A CY7C162A range-26
Text: MOE D CY PR ESS S E M I C O N D U C T O R EH 250^2 DOOMfibH 0 B B C V P 7= tf-2> /0 7C161A CY7C162A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese lected • TVansparent write 7C161A • CMOS for optimum speed/power • High speed
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-7Z-10
CY7C161A
CY7C162A
7C161A)
CY7C162A
7C161A
la25p
range-26
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Untitled
Abstract: No abstract text available
Text: 7C161A CY7C162A CYPRESS SEMICONDUCTOR Features Functional Description • High speed The 7C161A and CY7C162A are highperformance CMOS static RAMs orga nizes as 16,384 by 4 bits with separate I/O. Easy memory expansion is provided by ac tive LOW chip enables C E i, CE2 and
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CY7C161A
CY7C162A
7C162A
CY7C162A
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Untitled
Abstract: No abstract text available
Text: 7C161A CY7C162A 16Kx 4 Static RAM with Separate I/O Features • High speed • • • • • • into the memory location specified on the address pins Ao through A 1 3 . Reading the device is accomplished by tak ing the chip enables ( ^ Ei, ( ^ 2 ) LOW
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CY7C161A
CY7C162A
7C161A)
CY7C161Aand
CY7C162Aarehighperfonnance
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Untitled
Abstract: No abstract text available
Text: 7C161A CY7C162A CYPRESS SEMICONDUCTOR 16,384 x 4 Static R/W RAM Separate I/O is written into the memory location speci fied on the address pins Ao through A 1 3 . Capable o f w ithstanding greater than 2001V electrostatic discharge. Features • Automatic power-down when dese
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CY7C161A
CY7C162A
CY7C161A
CY7C162A
CY7C162Aâ
35DMB
35KMB
35LMB
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