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    7C162A Search Results

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    7C162A Price and Stock

    Altera Corporation CY7C162A35DMB

    16K X 4 STANDARD SRAM Standard SRAM, 16KX4, 35ns, CMOS, CDIP28
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    ComSIT USA CY7C162A35DMB 20
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    7C162A Datasheets Context Search

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    cmos SRAM 35ns 8k X 8 dip

    Abstract: 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164
    Text: Qualification Report January 1992 QTP 91094 64K SRAM FAMILY MARKETIN G DEVICE PART NBR DESCRIPTION CY7C161 16K x 4 SIO CY7C162 16K x 4 (SIO) CY7C164 16K x 4 CY7C166 (OE) CY7C185 8K x 8 CY7C186 8K x 8 (.6 DIP) CY7C187 64K x 1 Version 1.2 PRODUCT DESCRIPTION (for qualification)


    Original     		CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 Cypr507/1 200mA cmos SRAM 35ns 8k X 8 dip 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164 PDF

    CY7C161A

    Abstract: CY7C162A A5624 cy7c161a-35dmb
    Text: CY7C161A 7C162A 16KĂxĂ4 Static RAM with Separate I/O into the memory location specified on the Features Functional Description D The CY7C161A and 7C162A are highĆ performance CMOS static RAMs orgaĆ nizes as 16,384 by 4 bits with separate I/O. Easy memory expansion is provided by acĆ


    Original     		CY7C161A CY7C162A 16Kx4 7C162A CY7C161A CY7C162A A5624 cy7c161a-35dmb PDF

    81c78

    Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
    Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M


    Original     		2147-35C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35M 2148-45C 81c78 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference PDF

    MSM 6290

    Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+


    Original     		2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 27S07AC 7C190-25C MSM 6290 msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150 PDF

    CY7C161A

    Abstract: CY7C162A
    Text: CY7C161A 7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.


    Original     		CY7C161A CY7C162A 7C161A) 38-00116-C 28-Lead 300-Mil) 28-Pin MIL-STD-1835 CY7C161A CY7C162A PDF

    27HC642

    Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+


    Original     		2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 27S07AC 7C190-25C 27HC642 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S PDF

    CY7C161A

    Abstract: CY7C162A CY7C161A-25DMB
    Text: 1CY 7C16 2A CY7C161A 7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.


    Original     		CY7C161A CY7C162A 7C161A) CY7C161A CY7C162A CY7C161A-25DMB PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A 7C162A CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • High speed The C Y 7C161A and C Y 7C162A are highperform ance C M O S static R A M s orga­ nizes as 16,384 by 4 bits w ith sep a ra te I/O . Easy m em ory expansion is provided by ac­


    OCR Scan     		CY7C161A CY7C162A 7C161A 7C162A PDF

    7cl6

    Abstract: D-2501 CY7C161A CY7C162 CY7C162A
    Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A 7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power


    OCR Scan     		CY7C161A CY7C162A 7C161A) CY7C162 au62A-35DMB CY7C162Aâ 35KMB CY7C162A-35LMB CY7C162A-45DMB 7cl6 D-2501 CY7C162A PDF

    Untitled

    Abstract: No abstract text available
    Text: mw CYPRESS Features • High speed — 20 ns tAA • CMOS Tor optim um speed/power • T ran sp aren t write 7C161A • Low active power — 550 mW • Low standby power — 220 mW • TTL-com patible inputs and outputs • Automatic power-down when dese­


    OCR Scan     		7C161A) CY7C161A CY7C162A 7C162A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A 7C162A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese­ lected • T ransparent write 7C161A • CMOS for optim um speed/power • High speed - 15 ns t* • Low active power - 550 mW • Low standby power - 220 mW • TTL-compatible inputs and outputs


    OCR Scan     		CY7C161A CY7C162A 7C161A) 7C162A chiY7C161A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A 7C162A CYPRESS SEMICONDUCTOR Features Functional Description • High speed The CY7C161A and 7C162A are highperformance CMOS static RAMs orga­ nizes as 16,384 by 4 bits with separate I/O. Easy memory expansion is provided by ac­ tive LOW chip enables C E i, CE2 and


    OCR Scan     		CY7C161A CY7C162A 7C162A CY7C162A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A 7C162A SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A 16,384 x 4 Static R/W RAM Separate I/O • Capable o f withstanding greater than 2001V electrostatic discharge. is written into the memory location speci­


    OCR Scan     		CY7C161A CY7C162A 7C161A) 7C162A --20D --25DM --25KMB --35D PDF

    CY7C161A-15DMB

    Abstract: No abstract text available
    Text: CY7C161A 7C162A 16K x 4 Static RAM with Separate I/O Functional D escription Features • High speed — 20 nstAA • CMOS for optimum speed/power • Transparent write 7C161A • Low active power — 550 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs


    OCR Scan     		CY7C161A CY7C162A 7C161A) CY7C161A-15DMB PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A 7C162A " ’V P P T T C C SEMICONDUCTOR Features • Automatic power-down when dese­ lected • T ransparent write (7C161A • CMOS for optimum speed/power • High speed - 15 ns Ua • Low active power - 550 mW • Low standby power - 220 mW


    OCR Scan     		CY7C161A CY7C162A 7C162A 7C161A) CY7C162A PDF

    tm l54

    Abstract: CY7C161A CY7C162A 0CE12
    Text: CY7C161A 7C162A 16K x 4 Static RAM with Separate I/O CYPRESS Functional Description Features • High speed — 20 ns t^ A • CMOS for optimum speed/power • Transparent write 7C161A • Low active power — 55« mW • Low standby power — 22« mW


    OCR Scan     		CY7C161A CY7C162A 7C161A) CY7C162Aare 38-00116-C 7C161A GD147flb tm l54 CY7C162A 0CE12 PDF

    la25p

    Abstract: CY7C161A CY7C162A range-26
    Text: MOE D CY PR ESS S E M I C O N D U C T O R EH 250^2 DOOMfibH 0 B B C V P 7= tf-2> /0 CY7C161A 7C162A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese­ lected • TVansparent write 7C161A • CMOS for optimum speed/power • High speed


    OCR Scan     		-7Z-10 CY7C161A CY7C162A 7C161A) CY7C162A 7C161A la25p range-26 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A 7C162A 16Kx 4 Static RAM with Separate I/O Features • High speed • • • • • • into the memory location specified on the address pins Ao through A 1 3 . Reading the device is accomplished by tak­ ing the chip enables ( ^ Ei, ( ^ 2 ) LOW


    OCR Scan     		CY7C161A CY7C162A 7C161A) CY7C161Aand CY7C162Aarehighperfonnance PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A 7C162A CYPRESS SEMICONDUCTOR 16,384 x 4 Static R/W RAM Separate I/O is written into the memory location speci­ fied on the address pins Ao through A 1 3 . Capable o f w ithstanding greater than 2001V electrostatic discharge. Features • Automatic power-down when dese­


    OCR Scan     		CY7C161A CY7C162A CY7C161A CY7C162A CY7C162Aâ 35DMB 35KMB 35LMB PDF