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    CY62147DV18 Price and Stock

    Rochester Electronics LLC CY62147DV18LL-70BVIT

    IC SRAM 4MBIT PARALLEL 48VFBGA
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    DigiKey CY62147DV18LL-70BVIT Bulk 1,068 151
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    Rochester Electronics LLC CY62147DV18LL-70BVI

    IC SRAM 4MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147DV18LL-70BVI Bulk 958 152
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    Rochester Electronics LLC CY62147DV18LL-55BVI

    IC SRAM 4MBIT PARALLEL 48VFBGA
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    DigiKey CY62147DV18LL-55BVI Bulk 470 132
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    Infineon Technologies AG CY62147DV18LL-70BVIT

    - Tape and Reel (Alt: CY62147DV18LL-70BV)
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    Avnet Americas CY62147DV18LL-70BVIT Reel 4 Weeks 182
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    Infineon Technologies AG CY62147DV18LL-70BVI

    4MB (256K X 16) 1.8V SUPER LOW POWER SLOW SRAM - Trays (Alt: CY62147DV18LL-70BV)
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    Avnet Americas CY62147DV18LL-70BVI Tray 4 Weeks 183
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    CY62147DV18 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62147DV18 Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV18L-55BVI Cypress Semiconductor Original PDF
    CY62147DV18L-55BVXI Cypress Semiconductor Original PDF
    CY62147DV18L-70BVI Cypress Semiconductor Original PDF
    CY62147DV18L-70BVXI Cypress Semiconductor Original PDF
    CY62147DV18LL-55BVI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV18LL-55BVXI Cypress Semiconductor Original PDF
    CY62147DV18LL-70BVI Cypress Semiconductor Original PDF
    CY62147DV18LL-70BVXI Cypress Semiconductor Original PDF

    CY62147DV18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY62147DV18 MoBL2 PRELIMINARY 4 Mb 256K x 16 Static RAM Features • • • • • • • • • mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable


    Original     		PDF CY62147DV18 CY62147CV18 48-ball I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns ■ Wide voltage range: 1.65 V to 2.25 V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A


    Original     		PDF CY62147EV18 CY62147DV18 48-ball

    CY62147CV18

    Abstract: CY62147DV18
    Text: CY62147DV18 MoBL2 4-Mb 256K x 16 Static RAM Features • • • • • • • • • mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable


    Original     		PDF CY62147DV18 I/O15) CY62147CV18 CY62147CV18 CY62147DV18

    AN1064

    Abstract: CY62147EV18 CY62147EV18LL CY62147DV18
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65V–2.25V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 7 µA


    Original     		PDF CY62147EV18 CY62147DV18 AN1064 CY62147EV18LL CY62147DV18

    AN1064

    Abstract: CY62147DV18 CY62147EV18 CY62147EV18LL
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65V–2.25V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 7 µA


    Original     		PDF CY62147EV18 CY62147DV18 AN1064 CY62147DV18 CY62147EV18LL

    CY62147CV18

    Abstract: CY62147DV18
    Text: CY62147DV18 MoBL2 4-Mb 256K x 16 Static RAM Features • • • • • • • • • mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable


    Original     		PDF CY62147DV18 I/O15) CY62147CV18 CY62147CV18 CY62147DV18

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62147EV18 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original     		PDF CY62147EV18 I/O15)

    AN1064

    Abstract: CY62147DV18 CY62147EV18 CY62147EV18LL
    Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original     		PDF CY62147EV18 I/O15) AN1064 CY62147DV18 CY62147EV18LL

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns


    Original     		PDF CY62147EV18 CY62147DV18 48-ball 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH


    Original     		PDF CY62147EV18 CY62147DV18 48-ball 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when:


    Original     		PDF CY62147EV18 CY62147DV18 48-ball 48-pin

    6T SRAM

    Abstract: SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram
    Text: TN-45-17: CellularRAM Replacing Single- and Dual-CE# SRAM Introduction Technical Note Using CellularRAM Memory to Replace Single- and Dual-Chip Select SRAM Introduction Micron CellularRAM™ devices are designed to be backward-compatible with 6T SRAM


    Original     		PDF TN-45-17: sheet--MT45W1MW16PD 09005aef8214f7dc/Source: 09005aef821149d2 TN4517 6T SRAM SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram

    transistor SMD wl3

    Abstract: making code WL3 Micron 32MB NOR FLASH making WL3 PSRAM A191 A192 CY62147DV18 K6F1616R6C SRAM 4T cell
    Text: TN-45-30: PSRAM 101 Introduction Technical Note PSRAM 101: An Introduction to Micron CellularRAM® and PSRAM Introduction The mobile phone market has become increasingly cost competitive, demanding interface innovations to support the low-cost requirements inherent in this market. Micron®


    Original     		PDF TN-45-30: 09005aef82de6ec2 09005aef82de6e2a tn4530 transistor SMD wl3 making code WL3 Micron 32MB NOR FLASH making WL3 PSRAM A191 A192 CY62147DV18 K6F1616R6C SRAM 4T cell

    CY62147DV18

    Abstract: CY62147EV18 CY62147EV18LL
    Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns The CY62147EV18 is a high performance CMOS static RAM organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62147EV18 I/O15) CY62147DV18 CY62147EV18LL