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    K6F1616R6C Price and Stock

    Samsung Semiconductor K6F1616R6C-FF70

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    Bristol Electronics K6F1616R6C-FF70 3,615
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    Samsung Electronics Co. Ltd K6F1616R6C-FF70

    K6F1616R6C-FF70
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    South Electronics K6F1616R6C-FF70
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    K6F1616R6C Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K6F1616R6C Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616R6C-F Samsung Electronics 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F1616R6C-FF70 Samsung Electronics 1M x16-Bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF

    K6F1616R6C Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: K6F1616R6C Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft November 17, 2003 Preliminary 0.1 Revised - Changed ball name of E3 Vss & H6 (DNU) to NC.


    Original     		PDF K6F1616R6C

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    6T SRAM

    Abstract: SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram
    Text: TN-45-17: CellularRAM Replacing Single- and Dual-CE# SRAM Introduction Technical Note Using CellularRAM Memory to Replace Single- and Dual-Chip Select SRAM Introduction Micron CellularRAM™ devices are designed to be backward-compatible with 6T SRAM


    Original     		PDF TN-45-17: sheet--MT45W1MW16PD 09005aef8214f7dc/Source: 09005aef821149d2 TN4517 6T SRAM SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram

    transistor SMD wl3

    Abstract: making code WL3 Micron 32MB NOR FLASH making WL3 PSRAM A191 A192 CY62147DV18 K6F1616R6C SRAM 4T cell
    Text: TN-45-30: PSRAM 101 Introduction Technical Note PSRAM 101: An Introduction to Micron CellularRAM® and PSRAM Introduction The mobile phone market has become increasingly cost competitive, demanding interface innovations to support the low-cost requirements inherent in this market. Micron®


    Original     		PDF TN-45-30: 09005aef82de6ec2 09005aef82de6e2a tn4530 transistor SMD wl3 making code WL3 Micron 32MB NOR FLASH making WL3 PSRAM A191 A192 CY62147DV18 K6F1616R6C SRAM 4T cell