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    CY62147EV18LL Search Results

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    CY62147EV18LL Price and Stock

    Rochester Electronics LLC CY62147EV18LL-45BVXI

    IC SRAM 4MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147EV18LL-45BVXI Tray 2,850 111
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    Infineon Technologies AG CY62147EV18LL-55BVXI

    IC SRAM 4MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147EV18LL-55BVXI Tray 2,129 1
    • 1 $7.01
    • 10 $6.397
    • 100 $5.58913
    • 1000 $4.99844
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    Avnet Americas CY62147EV18LL-55BVXI Tray 4 Weeks 75
    • 1 $4.9
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    • 100 $4.39
    • 1000 $3.97
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    Mouser Electronics CY62147EV18LL-55BVXI 2,130
    • 1 $6.8
    • 10 $5.43
    • 100 $5.4
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    Rochester Electronics CY62147EV18LL-55BVXI 1,259 1
    • 1 $4.9
    • 10 $4.9
    • 100 $4.61
    • 1000 $4.17
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    EBV Elektronik CY62147EV18LL-55BVXI 15 Weeks 2,400
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    Rochester Electronics LLC CY62147EV18LL-55XIKB

    ASYNC RAM
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    DigiKey CY62147EV18LL-55XIKB Bulk 1,893 69
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    • 100 $4.41
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    Infineon Technologies AG CY62147EV18LL-45BVXI

    IC SRAM 4MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147EV18LL-45BVXI Tray 480
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.52379
    • 10000 $4.52379
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    Avnet Americas CY62147EV18LL-45BVXI Tray 4 Weeks 133
    • 1 $2.74
    • 10 $2.74
    • 100 $2.45
    • 1000 $2.22
    • 10000 $2.22
    Buy Now

    Rochester Electronics LLC CY62147EV18LL-55BVXI

    IC SRAM 4MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147EV18LL-55BVXI Bulk 62
    • 1 -
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    • 100 $4.86
    • 1000 $4.86
    • 10000 $4.86
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    CY62147EV18LL Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62147EV18LL-45BVXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 45NS 48VFBGA Original PDF
    CY62147EV18LL-45BVXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 45NS 48VFBGA Original PDF
    CY62147EV18LL-55BVXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 48VFBGA Original PDF
    CY62147EV18LL-55BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147EV18LL-55BVXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 48VFBGA Original PDF
    CY62147EV18LL-55BVXIT Cypress Semiconductor 4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 1.65 to 2.25 V; Original PDF

    CY62147EV18LL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns ■ Wide voltage range: 1.65 V to 2.25 V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A


    Original
    PDF CY62147EV18 CY62147DV18 48-ball

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an


    Original
    PDF CY62147EV18 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original
    PDF CY62147EV18 I/O15)

    AN1064

    Abstract: CY62147DV18 CY62147EV18 CY62147EV18LL
    Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original
    PDF CY62147EV18 I/O15) AN1064 CY62147DV18 CY62147EV18LL

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns


    Original
    PDF CY62147EV18 CY62147DV18 48-ball 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH


    Original
    PDF CY62147EV18 CY62147DV18 48-ball 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when:


    Original
    PDF CY62147EV18 CY62147DV18 48-ball 48-pin

    AN1064

    Abstract: CY62147EV18 CY62147EV18LL CY62147DV18
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65V–2.25V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 7 µA


    Original
    PDF CY62147EV18 CY62147DV18 AN1064 CY62147EV18LL CY62147DV18

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • • • • also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH


    Original
    PDF CY62147EV18 CY62147DV18 48-ball

    CY62147DV18

    Abstract: CY62147EV18 CY62147EV18LL
    Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns The CY62147EV18 is a high performance CMOS static RAM organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original
    PDF CY62147EV18 I/O15) CY62147DV18 CY62147EV18LL

    AN1064

    Abstract: CY62147DV18 CY62147EV18 CY62147EV18LL
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65V–2.25V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 7 µA


    Original
    PDF CY62147EV18 CY62147DV18 AN1064 CY62147DV18 CY62147EV18LL