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    CY62147EV18 Price and Stock

    Infineon Technologies AG CY62147EV18LL-55BVXI

    IC SRAM 4MBIT PARALLEL 48VFBGA
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    DigiKey CY62147EV18LL-55BVXI Tray 2,129 1
    • 1 $7.01
    • 10 $6.397
    • 100 $5.58913
    • 1000 $4.99844
    • 10000 $4.99844
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    Avnet Americas CY62147EV18LL-55BVXI Tray 4 Weeks 75
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    Mouser Electronics CY62147EV18LL-55BVXI 2,130
    • 1 $6.8
    • 10 $5.43
    • 100 $5.4
    • 1000 $4.88
    • 10000 $4.88
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    Rochester Electronics CY62147EV18LL-55BVXI 4,279 1
    • 1 $4.9
    • 10 $4.9
    • 100 $4.61
    • 1000 $4.17
    • 10000 $4.17
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    EBV Elektronik CY62147EV18LL-55BVXI 15 Weeks 2,400
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    Rochester Electronics LLC CY62147EV18LL-55XIKB

    ASYNC RAM
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    DigiKey CY62147EV18LL-55XIKB Bulk 1,893 69
    • 1 -
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    • 100 $4.41
    • 1000 $4.41
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    Infineon Technologies AG CY62147EV18LL-45BVXI

    IC SRAM 4MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147EV18LL-45BVXI Tray 480
    • 1 -
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    • 1000 $4.52379
    • 10000 $4.52379
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    Avnet Americas CY62147EV18LL-45BVXI Tray 4 Weeks 133
    • 1 -
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    Rochester Electronics LLC CY62147EV18LL-45BVXI

    IC SRAM 4MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147EV18LL-45BVXI Tray 111
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.71
    • 10000 $2.71
    		Buy Now

    Rochester Electronics LLC CY62147EV18LL-55BVXI

    IC SRAM 4MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147EV18LL-55BVXI Bulk 62
    • 1 -
    • 10 -
    • 100 $4.86
    • 1000 $4.86
    • 10000 $4.86
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    Find more CY62147EV18 price and stock on Findchips.com

    CY62147EV18 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62147EV18 Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147EV18LL-45BVXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 45NS 48VFBGA Original PDF
    CY62147EV18LL-45BVXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 45NS 48VFBGA Original PDF
    CY62147EV18LL-55BVXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 48VFBGA Original PDF
    CY62147EV18LL-55BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147EV18LL-55BVXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 48VFBGA Original PDF
    CY62147EV18LL-55BVXIT Cypress Semiconductor 4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 1.65 to 2.25 V; Original PDF

    CY62147EV18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns ■ Wide voltage range: 1.65 V to 2.25 V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A


    Original     		PDF CY62147EV18 CY62147DV18 48-ball

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62147EV18 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original     		PDF CY62147EV18 I/O15)

    AN1064

    Abstract: CY62147DV18 CY62147EV18 CY62147EV18LL
    Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original     		PDF CY62147EV18 I/O15) AN1064 CY62147DV18 CY62147EV18LL

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns


    Original     		PDF CY62147EV18 CY62147DV18 48-ball 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH


    Original     		PDF CY62147EV18 CY62147DV18 48-ball 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when:


    Original     		PDF CY62147EV18 CY62147DV18 48-ball 48-pin

    AN1064

    Abstract: CY62147EV18 CY62147EV18LL CY62147DV18
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65V–2.25V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 7 µA


    Original     		PDF CY62147EV18 CY62147DV18 AN1064 CY62147EV18LL CY62147DV18

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • • • • also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH


    Original     		PDF CY62147EV18 CY62147DV18 48-ball

    CY62147DV18

    Abstract: CY62147EV18 CY62147EV18LL
    Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns The CY62147EV18 is a high performance CMOS static RAM organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62147EV18 I/O15) CY62147DV18 CY62147EV18LL

    AN1064

    Abstract: CY62147DV18 CY62147EV18 CY62147EV18LL
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65V–2.25V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 7 µA


    Original     		PDF CY62147EV18 CY62147DV18 AN1064 CY62147DV18 CY62147EV18LL

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL2 PRELIMINARY 2-Mbit 128K x 16 Static RAM Features reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0


    Original     		PDF CY62137FV18 48-ball I/O15)

    CY62126EV30

    Abstract: CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30 CY62146E CY62146EV30 CY62147EV30 CY62157EV30
    Text: Recommended Usage of Byte Enables in Standby Mode for 90 nm x16 MoBL SRAMs AN13842 Author: Anuj Chakrapani Associated Project: No Associated Part Family: 90 nm x16 MoBL® SRAMs Software Version: None Associated Application Notes: None Application Note Abstract


    Original     		PDF AN13842 AN13842. CY62126EV30) CY62136EV30, CY62137EV30, CY62136FV30, CY62137FV30, CY62137FV18) CY62146E, CY62146EV30, CY62126EV30 CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30 CY62146E CY62146EV30 CY62147EV30 CY62157EV30

    AN66311

    Abstract: 0x0003 CY62148E CY62177EV30 CY62128E CY62128EV30 CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV30
    Text: Timing Recommendation for Byte Enables and Chip Enables in MoBL SRAMs AN66311 Author: Anuj Chakrapani Associated Project: No Associated Part Family: CY62126EV30, CY62126ESL, CY62128E, CY62128EV30, CY62136ESL, CY62136EV30, CY62136FV30, CY62137EV30, CY62137FV18, CY62137FV30, CY62138EV30,


    Original     		PDF AN66311 CY62126EV30, CY62126ESL, CY62128E, CY62128EV30, CY62136ESL, CY62136EV30, CY62136FV30, CY62137EV30, CY62137FV18, AN66311 0x0003 CY62148E CY62177EV30 CY62128E CY62128EV30 CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV30