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    SMV512K32-SP

    Abstract: No abstract text available
    Text: SMV512K32-SP SLVSA21C – JUNE 2011 – REVISED OCTOBER 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


    Original     		PDF SMV512K32-SP SLVSA21C 16-Mb 20-ns 5e-17 SMV512K32-SP

    CREME96

    Abstract: cots fpga radiation 115641 fpga radiation COTS radiation cots cmos RAM SEU proton XQVR300
    Text: Radiation Testing Update, SEU Mitigation, and Availability Analysis of the Virtex FPGA for Space Reconfigurable Computing † Earl Fuller2, Michael Caffrey1, Anthony Salazar1, Carl Carmichael3, Joe Fabula 3 1 Los Alamos National Laboratory 2 Novus Technologies, Inc.


    Original     		PDF CREME96: XAPP216, CREME96 cots fpga radiation 115641 fpga radiation COTS radiation cots cmos RAM SEU proton XQVR300

    fpga radiation

    Abstract: CREME96 AT17LV010-10DP
    Text: AT40KEL040 Reprogrammable SRAM based FPGA Total Dose TID and Single Event Effects (SEE) Abstract Taking into account the growing demand of the space industry for reprogrammable FPGAs as alternatives to low gate count ASICs, Atmel has redesigned its existing


    Original     		PDF AT40KEL040 AT40KEL040, AT40KEL040 fpga radiation CREME96 AT17LV010-10DP

    XAPP987

    Abstract: voter XAPP988 XAPP216 RAM SEU fpga radiation CREME96 Upsets XAPP779 XQR2V6000
    Text: Application Note: FPGAs Single-Event Upset Mitigation Selection Guide R Author: Brendan Bridgford, Carl Carmichael, and Chen Wei Tseng XAPP987 v1.0 March 18, 2008 Summary This application note discusses different aspects of single-event upsets and recommends


    Original     		PDF XAPP987 XAPP987 voter XAPP988 XAPP216 RAM SEU fpga radiation CREME96 Upsets XAPP779 XQR2V6000

    Untitled

    Abstract: No abstract text available
    Text: HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , 2M x 32 Radiation Hardened Static RAM is a high performance 2,097,152 word x 32-bit static random access memory MCM. The SRAM MCM consists of four 512k x 32 SRAM die fabricated with Honeywell’s 150nm silicon-on-insulator CMOS (S150) technology.


    Original     		PDF HXSR06432 32-bit 150nm ADS-14173

    HX6408

    Abstract: No abstract text available
    Text: HRT6408 512K x 8 STATIC RAM The monolithic 512k x 8 Radiation Tolerant Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low


    Original     		PDF HRT6408 150nm ADS-14194 HX6408

    Untitled

    Abstract: No abstract text available
    Text: HLX6228 128K x 8 STATIC RAM The monolithic 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation


    Original     		PDF HLX6228 360mW 40MHz ADS-14207

    Untitled

    Abstract: No abstract text available
    Text: HLX6256 32K x 8 STATIC RAM The monolithic 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation


    Original     		PDF HLX6256 400mW 40MHz ADS-14228

    Untitled

    Abstract: No abstract text available
    Text: HX6228 128K x 8 STATIC RAM The monolithic 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems


    Original     		PDF HX6228 1000mW 40MHz ADS-14206

    HLXSR01632

    Abstract: No abstract text available
    Text: HLXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


    Original     		PDF HLXSR01632 32-bit 150nm ADS-14217 HLXSR01632

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Made changes to Table IA, parameters: IDDDOP3, IDDDOP1, IDDDOPW1, IDDOPW40, IDDDOPW40, IDDOPR1, IDDDOPR1, IDDOPR40, IDDDOPR40, CINA, CINC. Made change to Figure 2; terminal 83, changed from NC to VDD. ksr APPROVED


    Original     		PDF IDDOPW40, IDDDOPW40, IDDOPR40, IDDDOPR40, HLXSR01632-DQH 5962H0820302VXC HLXSR01632-DVH

    TSC21020 256

    Abstract: ERC32 solar tree abstract DSP-21020 sparc v7 TSC21020F TSC695 TSC695F erc32 3-chip CREME96
    Text: TSC695F: A SEU immune SPARC 32bit computer for space applications Thierry CORBIERE ATMEL Nantes S.A. BP 70602, La Chantrerie 44306 NANTES cedex 3 France thierry.corbiere@nto.atmel.com Abstract After a three-chip set design, the TSC695F, a new monolithic ERC32 brings to space


    Original     		PDF TSC695F: 32bit TSC695F, ERC32 DSP-21020. ERC32, 32-bit TSC695F TSC21020 256 solar tree abstract DSP-21020 sparc v7 TSC21020F TSC695 erc32 3-chip CREME96

    Untitled

    Abstract: No abstract text available
    Text: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


    Original     		PDF SMV512K32-SP SLVSA21H 16-Mb 20-ns 5e-17

    XQR4VSX55

    Abstract: XAPP1088 Virtex-4 radiation XAPP988 fpga radiation SRL16 UG071 XQR4VLX200 XQR4VFX140 CREME96
    Text: Application Note: Virtex-4 Family Correcting Single-Event Upsets in Virtex-4 FPGA Configuration Memory XAPP1088 v1.0 October 5, 2009 Summary Author: Carl Carmichael and Chen Wei Tseng Designers of high-reliability applications must be concerned with the effect of single-event


    Original     		PDF XAPP1088 XQR4VSX55 XAPP1088 Virtex-4 radiation XAPP988 fpga radiation SRL16 UG071 XQR4VLX200 XQR4VFX140 CREME96

    Untitled

    Abstract: No abstract text available
    Text: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


    Original     		PDF SMV512K32-SP SLVSA21H 16-Mb 20-ns 5e-17

    251A137

    Abstract: 512KX40 251A137-517 4927N w26m 251a137-527 251A137-101-PS001 EOA20156 BAE 0002 BAE Systems 251A137
    Text: REVISIONS R E L or E C O D E S C R I P T I O N REV ECO EOA20156 G D A T E Refer to Document Change History herein 01-19-04 A P P R O V E D K. Mason NOTES: 1. This is a TOP LEVEL DRAWING TLD . 2. BAE SYSTEMS - Manassas, VA reference only. 3. All sheets are the same revision status.


    Original     		PDF EOA20156 512Kx40, 1RU44 251A137 512Kx40 A0-A18 DQ0-DQ39 251A137-517 4927N w26m 251a137-527 251A137-101-PS001 EOA20156 BAE 0002 BAE Systems 251A137

    Untitled

    Abstract: No abstract text available
    Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology n 150 nm Process n Total Dose Hardness 1x106 rad (Si) n Dose Rate Upset Hardness 1x109 rad(Si)/s


    Original     		PDF HXNV0100 HXNV0100 1x106 1x109 1x1012 1x10-10 1x1014 1x1015 ADS-14191

    Untitled

    Abstract: No abstract text available
    Text: HLXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


    Original     		PDF HLXSR01608 150nm ADS-14218

    XAPP779

    Abstract: UG156 SRL16 voter UG002 XQR2V6000 XQR2V1000 2V1000
    Text: Application Note: Virtex-II FPGAs R XAPP779 v1.1 February 19, 2007 Summary Correcting Single-Event Upsets in Virtex-II Platform FPGA Configuration Memory Authors: Brendan Bridgford, Carl Carmichael, Chen Wei Tseng Designers of space-based application must be concerned with the effect of single-event upsets


    Original     		PDF XAPP779 XAPP779 UG156 SRL16 voter UG002 XQR2V6000 XQR2V1000 2V1000

    Resolver-to-Digital Converter

    Abstract: MRC 100-6 mrc 501 transistor MRC 100-6 MRC 106 resolver sensor CREME96 FLUKE 52 1078e-05 source code for Resolver RDC
    Text: Application Note ACT 5028 Resolver-To-Digital Converter Heavy-Ion Irradiation Test Results for the ACT5028 Resolver-to-Digital Converter by Nathan Nowlin, Steve McEndree, Joseph Benedetto Mission Research Corporation, Microelectronics Division Daryl Butcher


    Original     		PDF ACT5028 AN5028-5 Resolver-to-Digital Converter MRC 100-6 mrc 501 transistor MRC 100-6 MRC 106 resolver sensor CREME96 FLUKE 52 1078e-05 source code for Resolver RDC

    Untitled

    Abstract: No abstract text available
    Text: HXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


    Original     		PDF HXSR01632 32-bit 150nm ADS-14154

    Untitled

    Abstract: No abstract text available
    Text: HX6356 32K x 8 STATIC RAM The monolithic 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems


    Original     		PDF HX6356 800mW 40MHz ADS-14272

    Untitled

    Abstract: No abstract text available
    Text: SMV512K32-SP SLVSA21B – JUNE 2011 – REVISED JULY 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


    Original     		PDF SMV512K32-SP SLVSA21B 16-Mb 20-ns 5e-17

    cots fpga radiation

    Abstract: Upset CREME96 fpga radiation COTS XQVR300 RAM SEU
    Text: Radiation Characterization, and SEU Mitigation, of the Virtex FPGA for SpaceBased Reconfigurable Computing † Earl Fuller2, Michael Caffrey1, Anthony Salazar1, Carl Carmichael3, Joe Fabula 3 1 Los Alamos National Laboratory 2 Novus Technologies, Inc. 3 Xilinx, Inc.


    Original     		PDF NS-39, CREME96: cots fpga radiation Upset CREME96 fpga radiation COTS XQVR300 RAM SEU