CMOS DRAM 8M X 16 Search Results

CMOS DRAM 8M X 16 Result Highlights (5)

Part	Manufacturer	Description
TC74HC14AF	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOP14
74VHCT541AFT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Octal Buffer, TSSOP20B
74HC14D	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOIC14
74VHC541FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Octal Buffer, TSSOP20B
74HC04D	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOIC14

CMOS DRAM 8M X 16 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K4S280432B Abstract: No abstract text available Text: K4S280432B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432B CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM	Original	K4S280432B 128Mbit K4S280432B A10/AP	PDF
K4S280432C Abstract: K4S280432D Text: K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280432D CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM	Original	K4S280432D 128Mbit K4S280432C 10/AP K4S280432D	PDF
K4S280432M Abstract: No abstract text available Text: K4S280432M CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432M CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM	Original	K4S280432M 128Mbit K4S280432M A10/AP	PDF
SL32 Abstract: SL32S6C8M4E-A60C Text: SL32 S/T 6C8M4E-A60C 8M X 32 Bits DRAM SIMM with Extended Data Out (EDO) FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SiliconTech SL32(S/T)6C8M4E-A60C is a 8M x 32 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of four CMOS 4M x 16 bit 3.3V DRAM	Original	6C8M4E-A60C 6C8M4E-A60C 50-pin 400-mil 104ns cycles/64ms A0-A11 A0-A11 BDQ24-31 SL32 SL32S6C8M4E-A60C	PDF
cmos dram 8m x 16 Abstract: SL36S6C8M4F-A60C SL36T6C8M4F-A60C Text: SL36 T/S 6C8M4F-A60C 8M X 36 Bits DRAM SIMM with EDO and Optimized for ECC FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SiliconTech SL36(T/S)6C8M4F-A60C is a 8M x 36 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of four CMOS 4M x 16 bit 3.3V DRAM	Original	6C8M4F-A60C 6C8M4F-A60C 50-pin 400-mil 24-pin 300-mil 104ns BDQ9-16 A0-A11 A0-A11 cmos dram 8m x 16 SL36S6C8M4F-A60C SL36T6C8M4F-A60C	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI HYM532814A M-Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 5328104Ais a 8M x 32-bit EDO mode CMOS DRAM m odule consisting of sixteen HY5117404Ain 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jj.F and 0.01	OCR Scan	HYM532814A 32-bit 5328104Ais HY5117404Ain HYM532814AM/ASLM/ATM/ASLTM HYM5328104AMG/ASLMG/ATMG/ASLTMG 1CF13-10-DEC94 HYM532814A	PDF
565 pin diagram Abstract: SL32 SL32S6C8M4A-A60C SL32T6C8M4A-A60C Text: SL32 S/T 6C8M4A-A60C 8M X 32 Bits DRAM 72-Pin SIMM with Fast Page Mode FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SL32(S/T)6C8M4A-A60C is a 8M x 32 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). The module consists of four CMOS 4M x 16 bit 3.3V DRAM components in	Original	6C8M4A-A60C 72-Pin 6C8M4A-A60C 50-pin 400-mil 110ns cycles/64ms A0-A11 A0-A11 BDQ24-31 565 pin diagram SL32 SL32S6C8M4A-A60C SL32T6C8M4A-A60C	PDF
HYM53 Abstract: No abstract text available Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each	OCR Scan	HYM536A810A 36-bit HYM536A81OA HY5117400A HYM536A81OAM/ASLM HYM536A810AMG/ASLMG HYM536A800A/ASL 1CF16-10-AUG95 HYM53	PDF
Untitled Abstract: No abstract text available Text: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted	OCR Scan	HYM536A814B 36-bit HY5117404B HYM536A814BM/BSLM HYM536A814BMG/BSLMG 012SQ171MN 1CF15-10-FEBM	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI 532810A HYM 8M X M-Series 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit R et page mods CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22\|iF decoupling capacitor is mounted	OCR Scan	32810A 32-bit HYM532810A HY5117400A HYM53281OAM/ALM/ATM/ALTM HYM53281OAMG/ALMG/ATMG/ALTMG HYM532810A/AL HYM532810AT/ALT 50flfl	PDF
hym536810 Abstract: HYM53 Text: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.	OCR Scan	HYM536810 36-blt 36-bit HY5117400 HY514100A 22fiF HYM53681OM/LM/TM/LTM HYM53681OMG/LMG/TMG/LTMG HYM53681OT/LT HYM53	PDF
HYM5328104B Abstract: HYM532814B HYM532810 HYM532814 Text: •HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT D ESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitors are	OCR Scan	HYM532814B 32-bit HYM5328104B HY5117404B HYM5328148M/BSLM/BTM/BSLTM HYM532814BMG/BSLMG/B7MG/BSLTMG 100B6 002f3 G0GS47S HYM532810 HYM532814	PDF
Untitled Abstract: No abstract text available Text: »HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.lyF and 0.01 nF decoupling capacitors are	OCR Scan	HYM532814B 32-bit HYM5328104B HY5117404B HYM532814BM/BSLM/BTM/BSLTM HYM532814BMG/BSLMG/BTMG/BSLTMG 100ffi 004i10* HYM532814B	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI HYM532814A M -Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104A is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.IjjF and 0.01 nF decoupling capacitors are	OCR Scan	HYM532814A 32-bit HYM5328104A HY5117404A HYM532814AM/ASLM/Ã HYM5328104AMG/ASLMG/ATWG/ASLTMG HYM532814A HYMS32814A	PDF

Untitled Abstract: No abstract text available Text: STI648104G1-70VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI648104G1-70VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple Technology STI648104G1-70VG consist of eight CMOS 8M x	OCR Scan	STI648104G1-70VG 144-PIN 124ns cycles/64ms STI648104G1-70VG 32-pin 400-mil	PDF
T4312816B Abstract: No abstract text available Text: tm TE CH T4312816B SDRAM 2M x 16bit x 4Banks Synchronous DRAM 8M x 16 SDRAM FEATURES GRNERAL DESCRIPTION • The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a	Original	T4312816B 16bit T4312816B	PDF
STI408004-60T Abstract: simm 72 pinout DQ28-31 Text: STI408004-60T 8M X 40 Bits DRAM SIMM with ECC and EDO FEATURES • GENERAL DESCRIPTION Performance range: tRC tRAC tCAC This product is a 8M x 40 bits Dynamic RAM DRAM Single Inline Memory Module (SIMM). This module consists of twenty CMOS 4M x 4 bits DRAMs in 24-pin SOJ packages mounted	Original	STI408004-60T 24-pin 72-pin 104ns cycles/32ms A0-A10 DQ24-27 DQ28-31 STI408004-60T simm 72 pinout DQ28-31	PDF
VG36648041DT Abstract: VS1664648041D VS864648041D Text: VS864648041D,VS1664648041D 8M,16MX64-Bit SDRAM Module VIS Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4	Original	VS864648041D VS1664648041D 16MX64-Bit VS1664648041D VG36648041DT) VS864648041D, PC100/JEDEC PC133 VG36648041DT	PDF
Untitled Abstract: No abstract text available Text: “H Y U N D A I HYM 532814A M-Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104A is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ¡aF decoupling capacitors are	OCR Scan	32814A 32-bit HYM5328104A HY5117404A HYM532814AM/ASLM/ATM/ASLTM HYM5328104AMG/ASLMG/ATMG/ASLTMG 541MIN. HYM532814A 1CF13-10-DEC94	PDF
HYM532814B Abstract: No abstract text available Text: “H Y U N D A I HYM532814B M-Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 j F and 0.01 (iF decoupling capacitors are	OCR Scan	HYM532814B 32-bit HYM5328104B HY5117404B HYM532814BM/BSLM/BTM/BSLTM HYM532814BMG/BSLMG/BTMG/BSLTMG HYM532814B	PDF
Untitled Abstract: No abstract text available Text: HY57V121620 L T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16.	Original	HY57V121620 16Bit 512-Mbit 608x16. 400mil 54pin	PDF
Untitled Abstract: No abstract text available Text: HY57V121620 L T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16.	Original	HY57V121620 16Bit 512-Mbit 608x16. 400mil 54pin	PDF
Untitled Abstract: No abstract text available Text: HY57V28420A 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hyundai HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of	Original	HY57V28420A HY57V28420A 728bit 608x4. 400mil 54pin	PDF
jeida dram 88 pin Abstract: STI368000C2 Text: STI368000C2 88-PIN CARDS 8M X 36 DRAM Cards FEATURES GENERAL DESCRIPTION • The Simple Technology STI368000C2 is a 8M bit x 36 Dynamic RAM high density memory card. The Simple^ Technology STI368000C2 consist of sixteen CMOS 4M x 4 tits DRAMs in 24-pin SOJ package and eight CMOS 4M x 1 bi: DRAMs in a	OCR Scan	STI368000C2 STI368000C2-60 STI368000C2-70 STI368000C2-80 110ns 130ns 150ns 88-PIN STI368000C2 jeida dram 88 pin	PDF

CMOS DRAM 8M X 16 Search Results

CMOS DRAM 8M X 16 Result Highlights (5)

CMOS DRAM 8M X 16 Datasheets Context Search

K4S280432B

K4S280432C

K4S280432M

SL32

cmos dram 8m x 16

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565 pin diagram

HYM53

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hym536810

HYM5328104B

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T4312816B

STI408004-60T

VG36648041DT

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HYM532814B

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jeida dram 88 pin