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    CMOS AOI Search Results

    CMOS AOI Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    EVKVC66901LCMOS Renesas Electronics Corporation Evaluation Board for 5P49V6901 VersaClock® 6 Visit Renesas Electronics Corporation
    EVKVC55901LCMOS Renesas Electronics Corporation Evaluation Board for 5P49V5901 VersaClock® 5 Visit Renesas Electronics Corporation

    CMOS AOI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3 input or gates TTL

    Abstract: cmos XOR Gates Nand gate Crystal Oscillator 4-input nand gates ttl XOR GATES "resistor set oscillator" dip TTL XOR Gates 5D208 cmos XOR schmitt trigger toggle nand
    Text: HT3A CMOS Low Cost Gate Array General Features • • • • • • • • 5µm LOVAG CMOS technology Operating voltage: 2.0V~4.8V Input/Output CMOS compatible High noise immunity Six array bases cover the range from 212~890 gates Enhanced reliability


    Original     		PDF HTA3000 HT3A000 HT3A100 HT3A200 HT3A300 HT3A400 3 input or gates TTL cmos XOR Gates Nand gate Crystal Oscillator 4-input nand gates ttl XOR GATES "resistor set oscillator" dip TTL XOR Gates 5D208 cmos XOR schmitt trigger toggle nand

    80C24

    Abstract: 10MHZ 80C03 80C04 EPE6047S PT4152
    Text: 80C24 80C24 Technology Incorporated AutoDUPLEXTM CMOS Ethernet Interface Adapter PRELIMINARY DATA SHEET December 10, 1996 Functional Features Note: Check for latest Data Sheet revision before starting any designs. • Low Power CMOS Technology Ethernet Serial


    Original     		PDF 80C24 10Base-T x3051. 10Base-5, 10Base-2, 80C24 004inches. MD400119/J 10MHZ 80C03 80C04 EPE6047S PT4152

    PT4152

    Abstract: EPE6047S 23Z435 80C25 80C26 A553-1084-01 T55 transformer
    Text: Full Duplex 80C26 80C26 CMOS Ethernet Interface Adapter in 28L Package 96346 Functional Features Note: Check for latest Data Sheet revision before starting any designs. • Low Power CMOS Technology Ethernet Serial Interface Adapter with Integrated Manchester


    Original     		PDF 80C26 10Base-T 10Base-5, 10Base-2, 80C25 MD400143/D PT4152 EPE6047S 23Z435 80C26 A553-1084-01 T55 transformer

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    sun hold RAS 0610

    Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000

    5Bp smd transistor data

    Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7
    Text: Order this data sheet by HDCM IL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military HDC Series HDC Series CMOS Arrays High Performance Triple Layer Metal 1.0 Micron CMOS Arrays Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a


    OCR Scan     		PDF

    KM684000ALG-7L

    Abstract: KM684000ALT-5L km684000alg KM684000ALP-5L 32SOP KM684000ALP-5 KM684000ALP-7 KM684000ALP-7L
    Text: KM684000A Family CMOS SRAM 512K x8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm CMOS • Organization: 512Kx8 • Power Supply Voltage: Single 5V±10% • Low Data Retention Voltage: 2V Min » Three state output and TTL Compatible


    OCR Scan     		PDF KM684000A 512Kx8 32-DIP-600 32-SOP-525, 32-TSQP2-400F/R KM684Q00A KM684000ALG-7L KM684000ALT-5L km684000alg KM684000ALP-5L 32SOP KM684000ALP-5 KM684000ALP-7 KM684000ALP-7L

    MCR 22-8 transistor power

    Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049
    Text: Order this data sheet by HDC/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH PERFORMANCE TRIPLE LAYER METAL HDC SERIES CMOS ARRAYS 1.0 MICRON CMOS ARRAYS Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a significant advancement in microchip technology.


    OCR Scan     		PDF

    CAT28LV65

    Abstract: No abstract text available
    Text: Preliminary CAT28LV65 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation: - Active: 8 mA Max.


    OCR Scan     		PDF CAT28LV65 64K-Bit 250/300/350ns CAT28LV65 28LV65 28LV65I

    Untitled

    Abstract: No abstract text available
    Text: Military CMOS Programmable Gate Array Logic Cell Array M 2 0 6 4 /M 2 0 1 8 Conforms to MIL-STD-883, Class B* Ordering Information Benefits Features CMOS • Low power • TTL or CMOS Input threshold levels PROGRAMABLE • Programmable Logic unctions • Programmable I/O blocks


    OCR Scan     		PDF MIL-STD-883, M2018 M2064 M2018 A0-A15

    HV6264A

    Abstract: hy6264a A12CE I0530
    Text: HY6264A Series ••H Y U N D A I 8K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY6264A HV6264A 70/85/100/120ns 1DB01-11-MAY95 330mil 048W2 1DB01 A12CE I0530

    KM41C4000C

    Abstract: No abstract text available
    Text: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM41C4000C, KM41V4000C 1024cycles KM41C4000C

    KM44C4100A

    Abstract: KM44C4000a KM44V4100A
    Text: KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A KM44C4000a KM44V4100A

    74LS382

    Abstract: C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381
    Text: ix u jD U Lu ra n ctiu F U JIT S U _ mmm CWiOS Gate Array GENERAL INFORMATION The Fujitsu CMOS gate array family consists of twentyeight devlcs types which are fabricated with advanced silicon gate CMOS technology. And more than 14devlc«s are coming. Fujitsu CMOS gate array are configured In a


    OCR Scan     		PDF veF178 74LS181 74LS190 F191H 74LS191 74LS192 74LS193 74LS194A 74LS195A 74S260 74LS382 C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381

    IDT7M135

    Abstract: IDT7M134S IDT7M145
    Text: Integrated Device Technology, Inc. 8K x 8 16K x 8 CMOS CMOS DUAL-PORT STATIC RAM MODULE MASTER FEATURES: • • • • • • • • • ■ • High-density 64K/128K CMOS Dual-Port RAM modules 16K x 8 (IDT7M135) or 8K x 8 (IDT7M134)option Fully asynchronous read/write operation from either port


    OCR Scan     		PDF IDT7M134S IDT7M135S 64K/128K IDT7M135) IDT7M134 134/ID RL10L LW10R IDT7M135 IDT7M145

    v1000ct

    Abstract: KM44V1000C
    Text: KM44C1OOOC, KM44V1000C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44C1OOOC, KM44V1000C 1024cycles v1000ct KM44V1000C

    Untitled

    Abstract: No abstract text available
    Text: -P R E L IM IN A R Y October 1995 Edition 1.1 = FUJITSU PRODUCT PROFILE SHEET MB 8 116165 A- 60/-70 CMOS 1M X 16BIT HYPER PAGE M O D E DYNAMIC RAM CMOS 1,048,576 x 16BIT Hyper Page Mode Dynamic RAM The Fujitsu MB8116165A is a fully decoded CMOS Dynamic RAM DRAM that contains


    OCR Scan     		PDF 16BIT MB8116165A 16-bit 256-bits MB8116165A-60 MB8116165A-70 50-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM44C1005C CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power


    OCR Scan     		PDF KM44C1005C

    rb414

    Abstract: KM44C1003
    Text: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


    OCR Scan     		PDF KM44C HHHHHHI-INMHHM01 KM44C1003DT rb414 KM44C1003

    Untitled

    Abstract: No abstract text available
    Text: -.¿ J D S 0 5 -1 0 1 4 4 -5 E MEMORY CMOS 1 M x 4 BIT FAST PAGE MODE DRAM MB814400A-60/-70/-80 CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB814400A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 4,194,304


    OCR Scan     		PDF MB814400A-60/-70/-80 MB814400A 024-bits MB814400A MB814400A-60/M B814400A-70/MB814400A-80 FPT-26P-M02) F26002S-3C-3

    Untitled

    Abstract: No abstract text available
    Text: Whaì H E W L E T T mLHM PA C K A R D High Speed CMOS Optocoupler Technical Data HCPL-7100 HCPL-7101 F eatures • CMOS IC Technology • C om patibility w ith All +5 V CMOS and TTL Logic Fam ilies • No E xternal Com ponents Required for Logic Interface


    OCR Scan     		PDF HCPL-7100 HCPL-7101 HCPL-7100) HCPL-7101) HCPL-7100/7101 L-7100 PL-7101)

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8116400B-50/-60 CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8116400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8116400B features a “fast page” mode of operation whereby high­


    OCR Scan     		PDF MB8116400B-50/-60 MB8116400B MB8116400B C26059S-3C-1 26-pin FPT-26P-M05) F26005S-2C-1

    Untitled

    Abstract: No abstract text available
    Text: 80C24 AutoDUPLEXrM CMOS Ethernet Interface Adapter Technology, Incorporated March 1994 ADVANCED DATA SHEET Functional Features General Description • Low Power CMOS Technology Ethernet Serial Interface Adapter with Integrated Manchester Code Converter MCC , AUland 10Baae-T


    OCR Scan     		PDF 80C24 10Baae-T 10Base-5, 10Base-2, 10Base-T 80C24 MD400119/E

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. Preliminary Data March 1989 TM Features Advanced CMOS EEPROM Technology High Performance, Low Power Consumption — tPD = 20ns, fmax= 37MHz — Icc = 55mA + 0.5mA/MHz EE Reprogrammability — Low risk reprogrammable inventory


    OCR Scan     		PDF 37MHz 12-configuration