Untitled
Abstract: No abstract text available
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2735075F
CMPA2735075F
CMPA27
35075F
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CMPA2735075F
Abstract: CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1
Text: ADVANCED INFORMATION CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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Original
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PDF
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CMPA2735075F
CMPA2735075F
CMPA27
35075F
CMPA2735075F-TB
RF-35-0100-CH
cree
military mobility
CGH2735075
tRANSISTOR 2.7 3.1 3.5 GHZ cw
AMP1052901-1
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CMPA2735075F
Abstract: IDQ Freq Products RF-35-0100-CH
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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Original
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PDF
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CMPA2735075F
CMPA2735075F
CMPA27
35075F
78001SA
IDQ Freq Products
RF-35-0100-CH
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CMPA2735075F
Abstract: No abstract text available
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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Original
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PDF
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CMPA2735075F
CMPA2735075F
CMPA27
35075F
78001e
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