CS42L50K
Abstract: AES17-1991 CDB42L50 CS42L50 CS42L50-KN
Text: CS42L50 Low Voltage, Stereo CODEC with Headphone Amp Features Description l 28-Pin CASON package l 1.8 to 3.3 Volt supply l 24-Bit conversion / 96 kHz sample rate l 96 dB ADC/DAC dynamic range at 3 V supply l -88/-85 dB ADC/DAC THD+N l 19 mW playback power consumption @ 1.8 V
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CS42L50
28-Pin
24-Bit
CS42L50
24-bit,
DS544PP1
CS42L50K
AES17-1991
CDB42L50
CS42L50-KN
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ATMEL reflow temp
Abstract: cason ATMEL JEDEC-STD-020 cason 8 pcb pattern SOIC-8s2 8S2 8-lead SOIC 8 pcb pattern IPC-SM-782 DVD laser pickup assembly 8s2 pcb
Text: CASON Package Pad Landing Recommendations DataFlash Introduction This application note provides PCB designers with a set of guidelines for successful board mounting of Atmel’s DataFlash® memories housed in the Chip Array Small Outline No Lead CASON package. The 8-contact CASON package fits the same PCB
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128-Mbit
3438B
ATMEL reflow temp
cason
ATMEL JEDEC-STD-020
cason 8 pcb pattern
SOIC-8s2
8S2 8-lead
SOIC 8 pcb pattern
IPC-SM-782
DVD laser pickup assembly
8s2 pcb
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UG628
Abstract: No abstract text available
Text: Spartan-6 FPGA Configuration User Guide UG380 v2.5 January 23, 2013 Notice of Disclaimer The information disclosed to you hereunder (the “Materials”) is provided solely for the selection and use of Xilinx products. To the maximum extent permitted by applicable law: (1) Materials are made available "AS IS" and with all faults, Xilinx hereby DISCLAIMS ALL
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UG380
UG628
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AT45DBxxx
Abstract: AT45DBXX AT45DB321C tsop 28-LEAD Footprints AT45DB321 TSOP 28 SPI memory Package flash AT45DB321B EMBEDDED C programming for atmel 128 TSOP 28 SPI memory Package ATMEL Packaging information JEDEC SOIC
Text: Getting the Most Out of the New AT45DBxxxC DataFlash Family Introduction The AT45DB321C is the first member of a new family of low-cost, high-speed serialinterface DataFlash memories targeting a wide range of applications in the embedded and wireless markets. The AT45DB321C offers enhanced hardware and software features as well as smaller form factor packages optimized for a variety of digital voice,
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AT45DBxxxC
AT45DB321C
3519B
AT45DBxxx
AT45DBXX
tsop 28-LEAD Footprints
AT45DB321
TSOP 28 SPI memory Package flash
AT45DB321B
EMBEDDED C programming for atmel 128
TSOP 28 SPI memory Package
ATMEL Packaging information JEDEC SOIC
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AT45DCB008D
Abstract: atmel 952 date code AT45DB642D BA10 PA12 3542C
Text: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • • • • • – RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 – Rapid8™ 8-bit Interface: 50 MHz Maximum Clock Frequency
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3542C
AT45DCB008D
atmel 952 date code
AT45DB642D
BA10
PA12
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AT45DB081B-RU
Abstract: AT45DB081 AT45DB081A AT45DB081B AT45DB081B-CC AT45DB081B-CNC PA10 PA11
Text: Features • • • • • • • • • • • • • Single 2.5V - 3.6V or 2.7V - 3.6V Supply Serial Peripheral Interface SPI Compatible 20 MHz Max Clock Frequency Page Program Operation – Single Cycle Reprogram (Erase and Program) – 4096 Pages (264 Bytes/Page) Main Memory
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264-byte
AT45DB081
AT45DB081A
2225I
AT45DB081B-RU
AT45DB081A
AT45DB081B
AT45DB081B-CC
AT45DB081B-CNC
PA10
PA11
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Untitled
Abstract: No abstract text available
Text: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • • • • • – RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 – Rapid8 8-bit Interface: 50 MHz Maximum Clock Frequency
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3542Kâ
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V53C318160A
Abstract: No abstract text available
Text: V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tPC) 35 ns 40 ns
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V53C318160A
16-bit
cycles/16
cycles/256
V53C318160A
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V53C316165A
Abstract: No abstract text available
Text: V53C316165A 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)
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V53C316165A
16-bit
cycles/64
42-pin
50/44-pin
V53C316165A
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cason
Abstract: i1005
Text: -► [Ä I- B [— 0 .7 ± 0 .0 5 FREESCALE SEMICONDUCTOR, INC. ALL RIGHTS RESERVED. TITLE: CASON 14, 7 X 7 X 1.01 MECHANICAL OUTLINE PRINT VERSION NOT TO SCALE DOCUMENT NO: 98ASA99348D REV: C CASE NUMBER: 1 3 8 3 -0 2 20 MAY 2005 STANDARD: NON-JEDEC BOTTOM VIEW
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98ASA99348D
05-BOTTOM
5M-994.
cason
i1005
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Untitled
Abstract: No abstract text available
Text: M O SEL V IT E L IC V53C8258L UL TRA-HIGH SPEED, 3.3 VOLT256K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PR&BMBBOtt HIGH PERFORMANCE 60 Max. RAS Access Time, tRAC 60 ns Max. Column Address Access Time, (t^M ) 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
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V53C8258L
VOLT256K
Interval--512
28-pin
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Untitled
Abstract: No abstract text available
Text: in te i’ 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 ¡¡A (max.)
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51C256L
51C256L-15
51C256L-20
51C256L
S1C256L
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Untitled
Abstract: No abstract text available
Text: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation
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51C256HL
51C256HL-15
51C256HL-20
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Untitled
Abstract: No abstract text available
Text: irrte1* M51C256H HIGH PERFORMANCE RIPPLEMODETm 256K x 1 CHMOS DYNAMIC RAM M ilita ry M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 High Reliability Ceramic— 16 Pin DIP Ripplem ode Operation — Continuous Data Rate over 12 MHz
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M51C256H
M51C256H-15
M51C256H-20
M51C256H
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km416c1200j
Abstract: km416c1200 MAS 10 RCD 71FC
Text: SAMSUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its
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KM416C1200
KM416C1200-7
130ns
KM416C1200-8
150ns
KM416C1200-10
100ns
180ns
cycles/16ms
km416c1200j
MAS 10 RCD
71FC
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HM4716
Abstract: HM4864P2
Text: H M 4 8 6 4 - 2 , H M 4 8 6 4 - 3 - HM4864P-2, HM4864P-3 6 5 5 3 6 -word x 1-bit Dynamic Random A cce ss Memory The HM4864 is a 65,536-words by 1-bit, MOS random access memory circuit fabricated with H IT A C H I'S double-poly N-channel H M 4 86 4 -2 , H M 4864-3
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HM4864P-2,
HM4864P-3
HM4864
536-words
HM4716
HM4864P2
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Untitled
Abstract: No abstract text available
Text: 51C65H HIGH PERFORMANCE STATIC COLUMN 64K X 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) • Static Column Mode Operation 51C65H-10 51C65H-12 100 120 55 65 ■ Fast “ Usable Speed’’ — C ontinuou s data rate ov e r 15 M H z
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51C65H
51C65H-10
51C65H-12
5lC65H
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difference between intel 8086 and intel 80186 pro
Abstract: 82C08 intel 82c08 difference between intel 80186 and intel 80286 pro 82C08-8 80188 programming 82C08-10 intel 80186 pin out IC 8208 intel 8208
Text: in te i. 82C08 CHMOS DYNAMIC RAM CONTROLLER • ■ 0 Walt State with INTEL ^Processors iAPX 286 1 10, 8 MHz J iAPX 186/88 1 86/88 J 82C08-20 20 MHz 82C08-16 16 MHz 82C08-10 10 MHz 82C08-8 8 MHz ■ Supports 64K and 256K DRAMs (256K x 1 and 256K x 4 Organizations)
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82C08
82C08-20
82C08-16
82C08-10
82C08-8
82C08
difference between intel 8086 and intel 80186 pro
intel 82c08
difference between intel 80186 and intel 80286 pro
80188 programming
intel 80186 pin out
IC 8208
intel 8208
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k22s
Abstract: HP 1003 WA
Text: iw VITELIC V53C258A FAMILY HIGH PERFORMANCE, LOW POWER 2 5 6 K X 1 B IT STATIC COLUMN CMOS DYNAMIC RAM ‘ 60/60L HIGH PERFORMANCE V53C25SA 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 30 ns
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V53C258A
256KX
V53C25SA
60/60L
70/70L
80/80L
10/10L
115ns
V53C258AL
V53C258A-10
k22s
HP 1003 WA
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Untitled
Abstract: No abstract text available
Text: intei M2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM M IL IT A R Y M2118-4 120 270 320 Maximum Access Time ns Read, Write Cycle (ns) Read-Modify Cycle (ns) • Single +5V Supply, ±10% Tolerance M2118-7 150 320 410 ■ RAS Only Refresh ■ HMOS Technology ■ Low Power: 150 mW Max. Operating
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M2118
M2118-4
M2118-7
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2164 dynamic ram
Abstract: 2118 intel 2164 RAM Intel 2164 2164 intel 2164 tea 2164 g hidden refresh Intel 2118
Text: intei' 2164-25 65,536 x 1 BIT DYNAMIC RAM 2164-25 Maximum Access Time ns 250 Read, Write Cycle (ns) 465 Read-Modify-Write Cycle (ns) 530 • Industry Standard 16-pin DIP 128 Refresh Cycles/2 ms RAS-only Refresh ■ HMOS Technology Non-Latched Output is Three-State
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16-pin
2164 dynamic ram
2118 intel
2164 RAM
Intel 2164
2164 intel
2164
tea 2164 g
hidden refresh
Intel 2118
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Untitled
Abstract: No abstract text available
Text: M OSEL VI TEL IC P R E L IM IN A R Y V 5 3C 1 6256H 2 5 6 K x 16 F A S T P A G E M O D E C M O S D Y N A M IC R A M HIGH PERFORMANCE 30 35 40 45 50 60 Max. RAS Access Tim e, tRAC 30 ns 35 ns 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA)
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6256H
16-bit
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Untitled
Abstract: No abstract text available
Text: M O SEL VI TELI C V 53C819HK H IG H P ER FO R M A NC E 512 K X 16 ED O P A G E MODE, DUAL RAS CM O S DYNAM IC R A M HIGH PERFORMANCE P R ELIM INA R Y 25 27 30 Max. RAS Access Tim e, tRAC 25 ns 27 ns 30 ns Max. Column Address Access Time, (tCAA) 13 ns 15 ns
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53C819HK
-25ns)
40-Pin
V53C819HK
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Untitled
Abstract: No abstract text available
Text: M O SEL VITELIC V53C311616500 3.3 VOLT 1 M X 16 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, Irac 50 ns 60 ns 70 ns Max. Column Address Access Time, (^ aa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, fcc)
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V53C311616500
16-bit
cycles/64
42-pin
50/44-pin
V53C311616500
G0G4151
00QM1S2
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