MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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ATV5030
ATV5090B
ATV6031
ATV6060H
ATV7050
BAL99LT1
BAS16LT1
BAS21LT1
BAV70LT1
BAV74LT1
MLED96
BRX49 SCR
MRF549
ATV5030
MRF660
MRF548
mmbr2857lt1
CR2428
MPF3822
MRF548 MOTOROLA
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2N5641
Abstract: No abstract text available
Text: JBe-tnl-donduoioi Lpioducti, Una. fc/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5641 The RF Line 7.0 W - 175MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . designed primarily for wideband large-signal amplifier stages in
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2N5641
175MHz
-30Vdc,
2N5641
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VTB5050J
Abstract: VTB5051J 5051j
Text: 5bE D 3 D 3 D b O cl 0 0 0 1 0 M 2 VTB Process Photodiodes E G 8> 6 521 VCT VTB5050J, 5051J VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a “flat" win dow, three lead TO-5 package. Chip is isolated from the case. The third lead
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3D30b0^
00010M2
VTB5050J,
5051J
CASE14A
VTB5050J
VTB5051J
VTB5050J
VTB5051J
5051j
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Untitled
Abstract: No abstract text available
Text: 303Db 0T 0 0 0 1 0 4 4 3T4 • VCT SbE D VTB5050UVJ, 1UVJ VTB Process Photodiodes 4 1 -S I E G & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a three lead TO-5 package with a UV transmitting "flat" window. Chip is isolated from
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303Db
VTB5050UVJ,
CASE14A
VTB5050UVJ
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VTB5050J
Abstract: VTB5051J VTB505U 5051J PIR 320 Vactec 25 PIR 148
Text: BQBQbO'î 0001042 521 « V C T 5bE » VTB Process Photodiodes V T B 5 0 5 0 J , 5 0 51 J E 6 & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a “fla f win dow, three lead TO-5 package. Chip is isolated from the case. The third lead
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VTB5050J,
5051J
CASE14A
VTB505U
VTB5051J
9x1012
8x1013
VTB5050J
VTB5051J
VTB505U
5051J
PIR 320
Vactec 25
PIR 148
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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IVA14208ST
Abstract: No abstract text available
Text: • 4447504 D01D332 T23 H H P A HEWLETT-PACKARD/ CMPNTS blE D W A ffi H E W LETT 1 "H A P A CK A R D Silicon Bipolar MMIC 2.5 GHz Variable Gain Amplifier Technical Data IVA-14208 IVA-14228 Features • Differential Input and Output Capability • DC to 2.5 GHz Bandwidth;
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D01D332
IVA-14208
IVA-14228
IVA-14208:
IVA-14228:
IVA-14228
IVA-14
IVA-14208-STR
IVA-14208-TR1
IVA-14208-TR2
IVA14208ST
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Untitled
Abstract: No abstract text available
Text: f J B l HEW LETT WSEM P A C K A R D Silicon Bipolar MMIC 2.5 GHz Variable Gain Amplifier Technical Data IVA-14208 IVA-14228 Features Description • Differential Input and Output Capability • DC to 2.5 GHz Bandwidth; 3.4 Gbits/s Data Sates • High Gain: 24 dB Typical
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IVA-14208
IVA-14228
IVA-14208:
IVA-14228:
IVA-14
IVA-14228
IVA-14208-STR
IVA-14208-TRi
IVA-14228-STR
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