G20N60
Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1S
IXGH24N60AU1
G20N60
IXGH24N60AU1S
IXGH24N60AU1
G24N60
IXYS IXGH24N60AU1 TO-247
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BB1871
Abstract: BB187 marking code 4 SC-79
Text: LESHAN RADIO COMPANY, LTD. VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.75 pF; ratio: 11 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners.
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BB187
OD523
SC-79)
OD523
SC-79
BB1871
marking code 4 SC-79
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Untitled
Abstract: No abstract text available
Text: VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.75 pF; ratio: 12 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners. · Voltage controlled oscillators VCO .
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BB187
OD523
SC-79)
OD523
SC-79
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mj 340
Abstract: MJ340 50n60 50N60AU1 IXSX50N60AU1 IXSX50N60AU1S
Text: Preliminary data VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 VCE sat = 2.7 V IGBT with Diode Combi Pack Short Circuit SOA Capability Symbol TO-247 Hole-less SMD (50N60AU1S) Test Conditions C (TAB) G Maximum Ratings E VCES TJ = 25°C to 150°C 600
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IXSX50N60AU1
IXSX50N60AU1S
O-247
50N60AU1S)
IXSX50N60AU1S
mj 340
MJ340
50n60
50N60AU1
IXSX50N60AU1
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Untitled
Abstract: No abstract text available
Text: VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.8 pF; ratio: 17 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners, band A up to 160 MHz
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BB182B
OD523
SC-79)
OD523
SC-79
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transistor 182B
Abstract: MARKING C SOD523 marking code 4 SC-79
Text: LESHAN RADIO COMPANY, LTD. VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.8 pF; ratio: 17 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners, band A up to 160 MHz
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BB182B
OD523
SC-79)
OD523
SC-79
transistor 182B
MARKING C SOD523
marking code 4 SC-79
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IXGH32N50B
Abstract: IXGH32N50BS
Text: Preliminary Data Sheet IXGH32N50B VCES IXGH32N50BS I C25 VCE sat tfi HiPerFASTTM IGBT = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 500 V
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IXGH32N50B
IXGH32N50BS
O-247
32N50BS)
IXGH32N50B
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32N60BU1
Abstract: 32N60B h32n60b e5200 32N60BU
Text: HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C
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IXGH39N60B
IXGH39N60BS
O-247
39N60BS)
32N60BU1
32N60B
h32n60b
e5200
32N60BU
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igbt to247
Abstract: s9011 IXGH24N60AU1S ixgh24N60
Text: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25
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IXGH24N60AU1
IXGH24N60AU1S
T0-247
24N60AU1S)
O-247
24N60AU1
B2-41
1XGH24N68AU1
W6H24WWMMl
24N80AU1
igbt to247
s9011
IXGH24N60AU1S
ixgh24N60
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40N30BD1
Abstract: No abstract text available
Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o
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IXGH40N30BD1
IXGH40N30BD1S
O-247SMD
40N30BD1S)
O-247
360VTj
40N30BD1
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32N60BU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C
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32N60BU1
32N60BU1S
O-247
B2-77
B2-78
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smd diode 819
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C
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IXGH32N60AU1
IXGH32N60AU1S
O-247
32N60AU1S)
IXGH32N60AU1
IXQH32N60AU1S
XGH32N60AU1
smd diode 819
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32N50
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C
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32N50BU1
32N50BU1S
O-247
32N50BU1S)
32N90BU1
32NS0BU1S
B2-22
32N50
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IXGH32N60AU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90
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32N60AU1
32N60AU1S
4b6b22b
IXGH32N60AU1
IXGH32N60AU1S
4bflb22b
0003bQb
IXGH32N60AU1
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3un6
Abstract: No abstract text available
Text: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat
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30N60BD1
30N60BD1
O-268
freq00
3un6
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diode SMD MARKING CODE JV
Abstract: NA MARKING SOT23 smd code marking sot23 marking code NA sot23 BBY40 Diode smd code cm marking 0K
Text: Product specification Philips Semiconductors VHF variable capacitance diode BBY40 FEATURES • Excellent linearity • Small plastic SMD package • C25: 4.6 pF; ratio: 5.5. APPLICATIONS ¿ • Electronic tuning in VHF television tuners, band A up to 160 MHz.
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BBY40
BBY40
25the
7110flBb
G10S3C
diode SMD MARKING CODE JV
NA MARKING SOT23
smd code marking sot23
marking code NA sot23
Diode smd code cm
marking 0K
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BBY40
Abstract: No abstract text available
Text: Product specification Philips Semiconductors VHF variable capacitance diode BBY40 FEATURES • Excellent linearity • Small plastic SMD package • C25: 4.6 pF; ratio: 5.5. APPLICATIONS • Electronic tuning in VHF television tuners, band A up to 160 MHz.
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BBY40
BBY40
25ther
7110flBb
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IXSX35N120AU1
Abstract: K 545 K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
Text: High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S PLUS 247 package V I CES C25 VCE SAT Short Circuit SOA Capability 1200 V 70 A 4V PLUS 247™ SMD (IXSX35N120AU1S) Preliminary data Symbol Test Conditions 'AB) Maximum Ratings VCES Tj = 25°C lo150°C
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247TM
IXSX35N120AU1
IXSX35N120AU1S
IXSX35N120AU1S)
lo150
O-247
35N120AU1
35N12QAU1S
K 545
K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
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50N60
Abstract: 50N6
Text: IGBT with Diode vCES IXSX50N60AU1 IXSX50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2
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247TM
IXSX50N60AU1
IXSX50N60AU1S
50N60AU1S)
O-247
247TM
50N60AU1)
50N60
50N6
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E25 SMD diode
Abstract: No abstract text available
Text: Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S CES C25 Combi Pack Short Circuit SOA Capability CE SAT 1200 V 70 A 4V PLUS TO-247 SMD (IXSX35N120AU1S) Symbol Test Conditions vCES vCGR v GES Tj = 25°C to 150°C; RGE = 1 Mi2
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IXSX35N120AU1
IXSX35N120AU1S
O-247TM
IXSX35N120AU1S)
O-247TM
IXSX35N12
IXSX35N12QAU1
E25 SMD diode
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 V IXSX35N120All 1S I Combi Pack Short Circuit SOA Capability CES 1200 V 70 A C25 V 4V CE SAT PLUS TO-247 SMD (IXSX35N120AU1S) Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C
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IXSX35N120AU1
IXSX35N120All
O-247â
IXSX35N120AU1S)
IXSX35N120AU1S
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ic tea 1090
Abstract: smd tea 521 27AD
Text: Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S v CES ^C25 v* CE sat % Combi Pack = = = = 600 V 75 A 2.7 V 275 ns T0-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MO
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IXGX50N60AU1
IXGX50N60AU1S
T0-247
50N60AU1S)
O-247
s1997
ic tea 1090
smd tea 521
27AD
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smd diode 819
Abstract: 30n60
Text: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO
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IXGH30N60BU1
IXGH30N60BU1S
O-247
30N60BU1S)
typ200
B2-58
smd diode 819
30n60
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Untitled
Abstract: No abstract text available
Text: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600
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IXGX50N60AU1
IXGX50N60AU1S
O-247
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