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    IXGH32N50B Search Results

    IXGH32N50B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH32N50B IXYS Hiperfast IGBT Original PDF
    IXGH32N50BS IXYS HiPerFAST IGBT Original PDF
    IXGH32N50BU1 IXYS Hiperfast IGBT With Diode Combi Pack Original PDF
    IXGH32N50BU1S IXYS HiPerFAST IGBT with Diode Combi Pack Original PDF

    IXGH32N50B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXGH32N50BU1

    Abstract: IXGH32N50BU1S
    Text: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE sat tfi = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) IXGH32N50BU1 IXGH32N50BU1S PDF

    IXGH32N50B

    Abstract: IXGH32N50BS
    Text: Preliminary Data Sheet IXGH32N50B VCES IXGH32N50BS I C25 VCE sat tfi HiPerFASTTM IGBT = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 500 V


    Original     		IXGH32N50B IXGH32N50BS O-247 32N50BS) IXGH32N50B PDF

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS P re lim in a ry D ata S heet IXGH32N50B IXGH32N50BS HiPerFAST IGBT V CES ^C25 V CE sat t 'fi 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) m Symbol Test Conditions V CES Ta = 2 5 C to 150 C 500 V V ¥cgr T j = 2 5 C to 150 C; RGE= 1 M 500 V V v GES


    OCR Scan     		IXGH32N50B IXGH32N50BS O-247 32N50BS) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S Hi Per FAST IGBT with Diode Combi Pack V CES ^C25 v CE sat K 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions v CES Td = 25°C to 150°C V C3R T.J = 25°C to 150°C; RrF bb V eES V GEM


    OCR Scan     		IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) PDF

    MJI-25

    Abstract: No abstract text available
    Text: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2


    OCR Scan     		IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) MJI-25 PDF

    TT 2146

    Abstract: 3em smd 1520S smd 3EM
    Text: Preliminary Data Sheet IXGH32N50B IXGH32N50BS Hi Per FAST IGBT V C ES IC25 V CE sat 500 V 60 A 2.0 V 80 ns T 0 -2 4 7 SMD (32N 50B S ) Symbol TestC onditions v CES Td = 2 5 °C to 1 5 0 °C 500 V V CGR Td = 25°C to 150°C; RGE = 1 M il 500 V V GES Continuous


    OCR Scan     		IXGH32N50B IXGH32N50BS TT 2146 3em smd 1520S smd 3EM PDF

    IXGD40N60A

    Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
    Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60


    OCR Scan     		IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60 PDF