Q8031
Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED
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ITP700FLEX
LIP-SM-M42
Q8031
ISL9504 U7500
SLG8LP436
ISL9504
macbook
"board view" macbook
820-1889
c5966
U6200
PP3V42G3H
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L7803
Abstract: 74LC125 HP C6602 AR2313 p66 apple U6301 SiL1362ACLU ZH510 b9718 L7206 1.2
Text: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 2 System Block Diagram MASTER MASTER 3 Power Block Diagram MASTER MASTER 38 39 4 Table Items MASTER 40 MASTER 5 FUNC TEST 1 OF 2 MASTER 41 MASTER 6 Power Conn / Alias MASTER
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514S0128
J9710
L7803
74LC125
HP C6602
AR2313
p66 apple
U6301
SiL1362ACLU
ZH510
b9718
L7206 1.2
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TPS5117
Abstract: Toko 10mm WPC8763L NVIDIA G84 C1740 C2068 stac9228x5 C2073 2 webcam Schematic Diagram 0735A
Text: A B C D E CPU DC/DC Hawke Intel Discrete Block Diagram CLK GEN 1 ICS9LPRS365 ISL6262A Project code : 91.4W1001.001 PCB P/N : 48.4W101.0SA Revision : 07212-SA Intel Mobile CPU 4 Merom 4M FSB:667 or 800 MHz CRT LCD RGB CRT 17 51 GDDRIII 700MHz LVDS 18 HDMI 16
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ISL6262A
ICS9LPRS365
4W1001
4W101
07212-SA
TPS5117
16Mbx32x2
700MHz
TPS5117
Toko 10mm
WPC8763L
NVIDIA G84
C1740
C2068
stac9228x5
C2073 2
webcam Schematic Diagram
0735A
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Untitled
Abstract: No abstract text available
Text: ADVANCE .1 MT28LF400 256K x 16, 512K x 8 FLASH MEMORY MICRON •- OUAMTUU o c v tc s a . INC 256K x 16, 512K x 8 3.3V/12V, BOOT BLOCK FEATURES • Seven erase blocks: - 16K B /8K -w ord boot block protected - T w o 8K B/ 4K -w ord param eter blocks - Four general m em ory blocks
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MT28LF400
V/12V,
100ns,
120ns
16-bit
001CH23
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C1994
Abstract: No abstract text available
Text: ADVANCE M IC R O N I MT20D840 8 MEG X 40 DRAM MODULE 8 MEG X 40 DRAM DRAM MODULE FAST PAGE MODE FEATURES Industry-standard 72-pin single in-line package High-perform ance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins are TTL-compatible
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MT20D840
72-pin
030mW
048-cycle
096-cycle
DE-16)
MT20D840G
T20DA40
blll541
C1994
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4LC4007J S 1 MEG X 4 DRAM DRAM 1 MEG x 4 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • • • Single +3.3V ±0.3V power supply Low power, 250|xW standby; lOOmW active, typical JEDEC-standard pinout and packages
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MT4LC4007J
024-cycle
128ms
25-35ns
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Untitled
Abstract: No abstract text available
Text: niCRON SEMICONDU CTOR INC b'iE D • hlllSMT □ □ G tìtì3tì 'iflT ■ URN M IC R O N I MT4C16260 256K X 16 DRAM SIM,CONDUCTOR ISC. DRAM 256K X 16 DRAM ASYMMETRICAL, FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages
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MT4C16260
024-cycle
C-1994.
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Untitled
Abstract: No abstract text available
Text: 1 PRELIMINARY M IC R O N • 8 MEG X StMlCOMCUCTOR. INC MT16D832 32,16 MEG x 16 DRAM MODULE 8 MEG x 32,16 MEG X16 DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 Packages Leadless 72-pin SIMM Leadless 7 2 -pin SIMM gold
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MT16D832
72-pin
MT16D832G-6
MT16D832is
T160832
Ot994.
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MT4C4M4
Abstract: No abstract text available
Text: 1» PRELIMINARY MICRON I 4 MEG SEIUCOMXJCTOA INC. X MT2D48 8 DRAM MODULE 4 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply
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MT2D48
30-pin,
400mW
048-cycle
30-pin
MT2D48M-6
30PPiMIN)
A0-A10
pyTT2D48
MT4C4M4
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N I 4 MEG X SfcMCONOUCTORMC MT12D436 36, 8 MEG x 18 DRAM MODULE 4 MEG X 36, 8 MEG x 18 DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING • Tim ing 60ns access 70ns access • Packages Leadless 7 2 -pin Leadless 7 2 -pin Leadless 7 2 -pin
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MT12D436
T12D436
bill54
A0-A10
MT120436
C1994,
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MT16C
Abstract: No abstract text available
Text: ». ADVANCE M IC R O N I MT16D T 464 4 MEG X 64 DRAM MODULE 4 MEG X 64 DRAM 5.0V FAST PAGE MODE FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-performance CMOS silicon-gate process • Single +5V ±10% power supply
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MT16D
168-pin,
200mW
048-cycle
MT10O
MT16C
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MT4C16256DJ-7
Abstract: No abstract text available
Text: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*
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256Kx
16DRAM
512-cycle
MT4C16257
MT4C16256/7
CYCLE24
MT4CI82S4/7
1QT94
QD1111D
MT4C16256DJ-7
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Untitled
Abstract: No abstract text available
Text: ADVANCED M IC R O N I MT58LC64K36B2 64Kx:36 SYNCBURST’* SRAM SYNCHRONOUS SRAM 64K x 36 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 9 ,1 0 ,1 1 ,1 2 and 14ns
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58LC64K
MT58LC64K36BZ
64K36B2
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mt43c4257adj7
Abstract: sama logic MT43C4257ADJ-7 MT43C4257A 4257A t994
Text: M T43C 4257A/8A 256KX4 TRIPLE-PORTDRAM MICRON I TRIPLE-PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS FEATURES • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible with 1 M eg VRAM
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350mW
512-cycle
048-bit
512x4
mt43c4257adj7
sama logic
MT43C4257ADJ-7
MT43C4257A
4257A
t994
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R Q IM 1 MT8D88C132/432 S , MT16D88C232/832(S) 4MB, 8MB, 16MB, 32MB DRAM CARDS DRAM CARD 4,8,16, 32 MEGABYTES 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 5.0V FAST PAGE MODE, OPTIONAL SELF REFRESH • • • • • • • • • • • PIN ASSIGNMENT (End View)
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MT8D88C132/432
MT16D88C232/832
88-pin
MT8D88C
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Untitled
Abstract: No abstract text available
Text: NI CR ON S F 1 I C C N D U C T O R INC blllS'-H Ü 0 1 0 0 Q Ü 5 b^ • URN bTE i MICRON I M T4 D 51232 5 12 K X 3 2 D R A M M O D U L E sem iconductorm e. DRAM MODULE 512K x 32 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 72-pin single-in-line
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72-pin
512-cycle
51232M
CYCLE20
MT4D51Z32
MT4D51232
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BCM 6302
Abstract: micron MT4C database for 4081 ic
Text: OBSOLETE MARCH 1995 D18A 512K X 8, 256K x 16 D R A M D IE I^IICRON 512Kx 8, 256Kx 16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A G EN ERAL PHYSICAL SPECIFICATIONS • Wafer thickness =18.5 mils ±0.5 mils. • The backside wafer surface Is polished bare silicon.
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114x114
512Kx
256Kx
MT4C8512D18A
MT4C16257D18A
150mm
BCM 6302
micron MT4C
database for 4081 ic
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Untitled
Abstract: No abstract text available
Text: M IC S Q N I IIW - 1 W IH • t s em c o n o u c to r MT2D88C25632, MT4D88C5123Z 1MBr 2MB DRAM CARDS n c DRAM CARD 1, 2 MEGABYTES 256K, 512K x 32; 5.0V FAST PAGE MODE FEATURES • Low power • JEDEC-standard 88-pin DRAM card pinout • Polarized receptacle connector
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MT2D88C25632,
MT4D88C5123Z
88-pin
MT2DMC25C32.
C51232
GD11374
MT4D88C51232
MT20MC2S632.
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ic 7442
Abstract: 7442 ic 7442
Text: 16 MEG DRAM DHE DRAM DIE 16 MEG DRAM M T4C 4M 4B 1D 21A FEATURES DIE OUTLINE Top View Single 5.0V pow er supply Industry-standard x4 timing and functions H igh-perform ance CMOS silicon-gate process All inputs and outputs are TTL- and CM OS-com patible Refresh m odes: RAS"ONLY, CAS‘- BEFO RE-RA S(CBR),
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150mm
309x676
849x17
113x113
ic 7442
7442 ic
7442
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Untitled
Abstract: No abstract text available
Text: ADVANCE I QUANTUM DEVICES INC FLASH MEMORY 256K x 16,512K x 8 FEATURES • Seven erase blocks: - 16KB/8K-word boot block protected - Two 8KB / 4K-word parameter blocks - Four general memory blocks • Low power 100(iA standby; 60mA active, MAX • 5V±10% read; 12V±5% write/erase
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16KB/8K-word
100ns
100ns
MT28F400
MT28F400
16-bit
MT2BF400
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N I ii^ n w r w MT16LD T 164(S) ! MEG x 64 DRAM MODULE 1 MEG x 64 DRAM 3.3V, OPTIONAL EXTENDED REFRESH, SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • H igh-perform ance CMOS silicon-gate process
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MT16LD
168-pin,
200mW
024-cycle
128ms
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4LC1M16C3 S 1 MEG X 16 DRAM M IC R O N I SEMICONDUCTOR ÍMC DRAM 1 M E G x 1 6 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process
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MT4LC1M16C3
024-cycle
225mW
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY lUKir—d a flM | hi — MT8D88C132H/432H S , MT16D88C232H/832H(S) 4 M B ^ 8 M B j 1 6 M B j 3 2 M B DRAR/| C A R D S DRAM MINICARD 8,16,32 megabytes 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 5.0V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • •
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MT8D88C132H/432H
MT16D88C232H/832H
88-pin
132KV432H
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T2D19
Abstract: No abstract text available
Text: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM
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MT2D18
30-pin
MT2D18M-6
DG113SQ
T2D19
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