Untitled
Abstract: No abstract text available
Text: PRELIMINARY FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F002B1 VET, MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40°C to +85°C for Vcc = 3V to 3.6V -25°C to +85°C for Vcc = 2.7V to 3.6V
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MT28F400B1
MT28F800B1
MT28F002B1
MT28F004B1
MT28F008B1
16KB/4K-word
128KB/64K-word
120ns
100ns
pac90/80*
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC128K32/36F1 128K X 32/36 SYNCBURST SRAM |U |IC R O N 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View
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MT58LC128K32/36F1
100-Pin
160-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4 L C1M16CX S 1 MEG X 16 DRAM IURN blllSHT I3004b21 4HT p ilC R O N MICRON TECHNOLOGY INC SSE » DRAM X 1 6 D R A M m 1 M E G 5.0V SELF REFRESH (MT4C1M16CX S) 3.0/3.3V, SELF REFRESH (MT4LC1M16CX S) FEATURES PIN ASSIGNMENT (Top View) • Self Refresh, ie "Sleep Mode"
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C1M16CX
I3004b21
MT4C1M16CX
MT4LC1M16CX
MT4C1M16C3/5
C1M16CXS
0004b44
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DUP1
Abstract: No abstract text available
Text: FIJCRON TECHNOLOGY INC MICRON SSE T> • blllSMT DD037M3 DT4 ■ URN M T56C 2818 8 K x 18, DUAL 4 K x 18 C A CH E DATA SRAM ■ - ; CACHE DATA -0 4 - q q a i i
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DD037M3
8Kx18
66MHz
b00D37S2
DUP1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON MT5LC1001 1 MEG X 1 SRAM SlMICCNDUÍTO* IN C I SRAM 1 MEG X 1 SRAM LOW VOLTAGE PIN ASSIGNMENT Top View • AU I / O pins are 5V tolerant • High speed: 1 5 ,1 7 ,2 0 and 25ns • High-perform ance, low-power, CM OS double-metal process
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MT5LC1001
28-Pin
bill54e
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Untitled
Abstract: No abstract text available
Text: I 4’ 8M E Gx32 DRAM SIMMs MICRON I TECHNOLOGY, INC. MT8D432 X MT16D832(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single in-line m emory module (SIMM) • 16MB (4 M eg x 32) and 32M B (8 M eg x 32)
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MT8D432
MT16D832
72-pin,
048-cycle
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MT4LC4M4G6
Abstract: No abstract text available
Text: I TECHNOLOGY. INC. DRAM 4 MEG x 4 3.3V, BURST E D O FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single +3.3V ±5% power supply • All inputs and outputs are LVTTL-compatible with 5V
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048-cycle
24/26-Pin
00131ti4
MT4LC4M4G6
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28SF400 M T285F400 256K x 16, 512K x 8 FLASH MEMORY M IC R Q IM I FLASH MEMORY 256Kx16, 512Kx8 S m a rtV o lta g e , FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks
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MT28SF400
T285F400
256Kx16,
512Kx8
44-Pin
16KB/8K-word
100ns
110ns,
150ns
0015Mbb
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MT4C1670
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 5SE T> • falllSHI DD0HS21 SbT ■ URN MT4C1670/1 L 64K X 16 DRAM MICRON rn TECHNOLOGY INC. DRAM 6 4 K x 1 6 DRAM NEW T -w -zb -n STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH • Industry standard xl6 pinouts, timing, functions and packages
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DD0HS21
MT4C1670/1
MT4C1670
MT4C1671
225mW-----------
DDD4S36
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT5LC1008 128K X 8 SRAM |U|IC=RON 128K x 8 S R A M SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 15,17,20 and 25ns • High-performance, low-power, CMOS double-metal process _ • Single +3.3V ±0.3V power supply
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MT5LC1008
32-Pin
bill54e
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 1 — - 256K x 32 SGRAM SYNCHRONOUS GRAPHICS RAM MT41LC256K32D4 SGRAM FEATURES • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle
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MT41LC256K32D4
024-cycle
100-Pin
blll541
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Untitled
Abstract: No abstract text available
Text: ADVANCE |V/|IC=RON 128K MT58LC128K32/36E1 32/36 SYNCBURST SRAM 128K X32/36 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 8.5,9,10,11 and 12ns
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MT58LC128K32/36E1
X32/36
160-PIN
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MT16LSD464AG-66CL2
Abstract: No abstract text available
Text: ADVANCE 2, 4 MEG X 64 SDRAM DIMMs MICRON I TECHNOLOGY. ir.U. SYNCHRONOUS DRAM MODULE MT8LSD T 264A MT16LSD(T)464A FEATURES • Components SOJ TSOP D DT • Package 168-pin DIMM (gold) • Frequency/C A S Latency 66 M H z/C L = 2 (10ns, 100 M Hz SD RA M s)-66CL2
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MT16LSD
168-Pin
DE-10)
DE-25)
DE-26)
MT16LSD464AG-66CL2
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MT80132
Abstract: No abstract text available
Text: lU lir - C in f M I iit - n u iM MT8DT32; MT16D232 1 MEG, 2 MEG x 32 DRAM MODULE DRAM 1 MEG, 2 MEG x 32 m A r v i i i r 4, 8 m e g a b y t e s , sv f a s t p a g e OPTIONAL EXTENDED REFRESH M \J U U L t FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 72-pin,
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MT8DT32;
MT16D232
72-pin,
824mW
CYCLE24
MT80132.
MT16023S
bill541
MT8D132r
MT80132
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N MT28SF002 256K x 8 FLASH MEMORY I FLASH MEMORY 256K x 8 S m a rtV o lta g e , FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|iA at 5V Vcc; 2|oA at
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MT28SF002
100ns
110ns,
150ns
40-Pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 64K SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4 .5 ,5 ,6 ,7 ,8 and 9ns Fast OE# access time: 4.5,5 and 6ns Single +3.3V +10%/-5% power supply
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160-PIN
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MT5C2564d
Abstract: 5c2564
Text: MI CR ON S E M I C O N D U C T O R INC b7E » WÊ b l l l S U T G Q G ci2fi3 blT • MRN I^IICRON 64K MT5C2564 X 4 SRAM 64K X 4 SRAM SRAM PIN ASSIGNMENT Top View • High speed: 1 0 ,12,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal
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MT5C2564
24-Pin
MT5C2564d
5c2564
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Untitled
Abstract: No abstract text available
Text: MICRO N T E C H N O L O G Y INC MICRON I IIW I-IW I SSE ]> 4 MEG DRAM MODULE • X bllism 32, 8 MEG X DG DH ñl S MT8D432 16 DRAM MODULE 4 MEG x 32, 8 MEG x 16 FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process
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MT8D432
72-pin
200mW
048-cycle
MT8D432M/G
blll54^
Q004fl24
A0-A10;
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4LC16M4G3/H9 16 MEG X 4 DRAM |U|IC=RON 16 MEG x 4 DRAM DRAM 3.3V, EDO PAGE MODE • Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 13 row-addresses, 11 column-addresses G3 or 12 row-addresses, 12 column-addresses (H9)
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MT4LC16M4G3/H9
096-cycle
MT4LC16M4G3DJ-5
MT4LC16M4Q3/H9
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Untitled
Abstract: No abstract text available
Text: 2 5 6 K X 16 EDO DRAM |uiic: r o n MT4C16270 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • All inputs, outputs and clocks are TTL-compatible
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MT4C16270
512-cycle
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4C16260/1 256Kx 16 D R AM MICRON SSE ]> Bi blllS4T 0004503 fiOb 2 5 6 K x 16 D R A M DRAM ASYMMETRICAL, T FAST PAGE MODE FEATURES • Industry standard xl6 pinouts, timing, functions and packages • Address entry: 10 row addresses, eight column
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MT4C16260/1
256Kx
500mW
MT4C16261
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28SF161 MTZBSF161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY MICRON I FLASH MEMORY 1 m eg x 16,2 MEGx8 3V FEATURES • • • • PIN ASSIGNMENT Top View Thirty-two 64KB/(32K-word) erase blocks Programmable sector lock Deep Power-Down Mode: 5(iA M A X
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MT28SF161
MTZBSF161
32K-word)
56-Pin
100ns,
150ns
G01S43L,
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T9049
Abstract: A7005 MT9D49M-6
Text: » M I C-n Rw On Ni I iH M 49 4 MEGX 9 DRAMM OT9D DULE DRAM MODULE 4 MEG X 9 DRAM FAST PAGE MODE FEATURES OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT9D49M-6 PIN ASSIGNMENT Top View
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30-pin
025mW
024-cycle
MT9D49
A0-A10
T9049
A7005
MT9D49M-6
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Untitled
Abstract: No abstract text available
Text: ADVANCE I 32K 'FC^HNOl 0 Vr INf. SYNCHRONOUS SRAM X MT58LC32K36D7 36 SYNCBURST SRAM 32K x 36 SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 4.5,5, 6, 7 and 8ns
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MT58LC32K36D7
160-PIN
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