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    BUK457 Price and Stock

    Philips Semiconductors BUK457-500B

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BUK457-500B 142 2
    • 1 -
    • 10 $2.25
    • 100 $1.125
    • 1000 $1.125
    • 10000 $1.125
    		Buy Now
    Quest Components BUK457-500B 541
    • 1 $3.132
    • 10 $3.132
    • 100 $3.132
    • 1000 $1.7226
    • 10000 $1.7226
    		Buy Now
    BUK457-500B 53
    • 1 $4
    • 10 $2.5
    • 100 $1.5
    • 1000 $1.5
    • 10000 $1.5
    		Buy Now
    BUK457-500B 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    BUK457 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUK457-400 Philips Semiconductors Scan PDF
    BUK457-400A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK457-400A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK457-400A Philips Semiconductors POWER MOS TRANSISTOR Scan PDF
    BUK457-400B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK457-400B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK457-400B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK457-400B Philips Semiconductors POWER MOS TRANSISTOR Scan PDF
    BUK457-400B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK457-450B Philips Semiconductors PowerMOS Transistor Original PDF
    BUK457-450B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK457-500A Philips Semiconductors PowerMOS Transistor Original PDF
    BUK457-500A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK457-500A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK457-500B Philips Semiconductors PowerMOS Transistor Original PDF
    BUK457-500B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK457-500B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK457-500B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK457-500B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK457-600A Philips Semiconductors PowerMOS Transistor Original PDF

    BUK457 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FREDFET

    Abstract: PHP6N60 BUK457-500B PHB8ND50E PHP8N50 PHP8ND50E PHW8ND50E
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET PHP6N60 BUK457-500B PHB8ND50E PHP8N50 PHP8ND50E PHW8ND50E

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BUK457-600B

    Abstract: PHP6N60 PHW7N60
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling


    Original     		PDF OT429 PHW7N60 BUK457-600B PHP6N60 PHW7N60

    BUK457-400B

    Abstract: PHP10N40 PHW11N40
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    Original     		PDF OT429 PHW11N40 BUK457-400B PHP10N40 PHW11N40

    BUK457-500B

    Abstract: PHP8N50 PHW9ND50 FREDFET
    Text: Philips Semiconductors Product specification PowerMOS transistor FREDFET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor incorporating a Fast Recovery Epitaxial Diode FRED . This gives improved switching performance in half-bridge


    Original     		PDF OT429 PHW9ND50 BUK457-500B PHP8N50 PHW9ND50 FREDFET

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    PHP6N60

    Abstract: 106AG BUK457-400B PHB10N40E PHP10N40 PHP10N40E PHW10N40E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP10N40E, PHB10N40E, PHW10N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP10N40E, PHB10N40E, PHW10N40E PHP10N40E O220AB) PHW10N4ion PHP6N60 106AG BUK457-400B PHB10N40E PHP10N40 PHW10N40E

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    BUK457-500A

    Abstract: BUK457-500B T0220AB Transistor bss
    Text: N AMER PHILIPS/DISCRETE 25E D • ^{=53=131 D Ü E a S S S S ■ PowerMOS transistor BUK457-500A BUK457-500B T ~ - 2 ? - i3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK457-500A BUK457-500B BUK457 -500A -500B BUK457-500B T0220AB Transistor bss

    BUK457-500A

    Abstract: BUK457-500B T0220AB 1-B-03 buk457
    Text: N AMER PHILIPS/DISCRETE 25E D • ^{=53=131 D Ü E a S S S S ■ PowerMOS transistor BUK457-500A BUK457-500B T ~ -2 ? -i3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK457-500A BUK457-500B BUK457 -500A -500B ID/100 T0220AB 1-B-03

    T120 Switch

    Abstract: BUK457-450B T0220AB FBR1
    Text: N AMER PHILIPS/DISCRETE m S5 E D bia5 3 T31 0 0 E0 5 S0 3 • PowerMOS transistor BUK457-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF biaS3T31 00205S0 BUK457-450B T120 Switch BUK457-450B T0220AB FBR1

    BUK457-400A

    Abstract: BUK457-400B T0220AB
    Text: N AMER PHILIPS/D ISCR ETE SSE D • G020S4S T ■ PowerMOS transistor BUK457-400A BUK457-400B r-37-j 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF G020S4S BUK457-400A BUK457-400B T-37-13 BUK457 -400A -400B BUK457-400A BUK457-400B T0220AB

    TRANSISTOR BO 341

    Abstract: 100-P BUK457-600A BUK457-600B T0220AB
    Text: N AMER P H I L I P S / D I S C R E T E BSE D ÜOZGSbG b m BUK457-600A BUK457-600B PowerMOS transistor T - 3 °t - 1 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK457-600A BUK457-600B T-il-13 BUK457 -600A -600B TRANSISTOR BO 341 100-P T0220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SE D N AMER PHILIPS/DISCRETE tabS3^31 OOEDSbQ b BUK457-600A BUK457-600B PowerMOS transistor r-5 < M 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK457-600A BUK457-600B BUK457 -600A -600B

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H IL IP S /D IS C R E T E bRE D • b b 5 3 R 31 Philips Sem iconductors D 0 3 0 7 1 D 035 H A P X Product Specification BUK457-600B Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK457-600B bbS3T31

    BUK457-400A

    Abstract: BUK457-400B T0220AB
    Text: N AMER PHILIPS/DISCRETE SSE D • 1^53=131 Ü020S4S T ■ PowerMOS transistor BUK457-400A BUK457-400B r-3 7 -J 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK457-400A BUK457-400B T--37-J3 BUK457 -400A -400B BUK457-400A BUK457-400B T0220AB

    BUK457-450B

    Abstract: T0220AB
    Text: N AMER P H I L I P S / D I S C R E T E S5E m D bia53T31 00E05S0 3 • PowerMOS transistor BUK457-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF biaS3T31 00205S0 BUK457-450B ID/100 T0220AB

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 5SE D • bbSHTBl 002QS4S T ■ PowerMOS transistor BUK457-400A BUK457-400B T -3 7 -1 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 002QS4S BUK457-400A BUK457-400B BUK457 -400A -400B

    BUK457-600B

    Abstract: transistor 2TH LD25C 100-P T0220AB
    Text: N AMER bTE PHILIPS/DISCRETE J> m bbSBTBl 003071G Philips Semiconductors BUK457-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 003071G BUK457-600B T0220AB BUK457-600B transistor 2TH LD25C 100-P T0220AB

    BUK457-500A

    Abstract: BUK457-500B
    Text: N AMER PHILIPS/D ISCR ETE SSE D • bbSBTBl 00S05SS 2 ■ PowerMOS transistor BUK457-500A BUK457-500B V -2 ? -l3 GENERAL DESCRIPTION SYMBOL CO O > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 00S05SS BUK457-500A BUK457-500B BUK457 -500A -500B T--39--13 BUK457-500B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE ]> bbS3^31 Q03D70S 77fl W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		PDF Q03D70S O220AB BUK457-500B

    BUK416-100BE

    Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
    Text: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93


    OCR Scan     		PDF BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE

    Mosfet catalogue

    Abstract: mosfet 200A buk444 200B 220AB
    Text: Philips Semiconductors Concise Catalogue 1996 PowerMOS transistors including TOPFETs and IGBTs P O W E R S E M IC O N D U C T O R S POWERMOS TRANSISTORS INCLUDING TOPFETS ^D S ^ D S o n (V) (O) 100 100 0.9 1.1 200 200 200 200 200 200 200 200 200 200 200


    OCR Scan     		PDF OT223 OT186 O-220AB OT404 Mosfet catalogue mosfet 200A buk444 200B 220AB