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    BUK457-500A

    Abstract: BUK457-500B
    Text: N AMER PHILIPS/D ISCR ETE SSE D • bbSBTBl 00S05SS 2 ■ PowerMOS transistor BUK457-500A BUK457-500B V -2 ? -l3 GENERAL DESCRIPTION SYMBOL CO O > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF 00S05SS BUK457-500A BUK457-500B BUK457 -500A -500B T--39--13 BUK457-500B