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    Text: N AMER PHILIPS/DISCRETE 5SE D • bbSHTBl 002QS4S T ■ PowerMOS transistor BUK457-400A BUK457-400B T -3 7 -1 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF 002QS4S BUK457-400A BUK457-400B BUK457 -400A -400B