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    BUK457-400A

    Abstract: BUK457-400B T0220AB
    Text: N AMER PHILIPS/D ISCR ETE SSE D • G020S4S T ■ PowerMOS transistor BUK457-400A BUK457-400B r-37-j 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		G020S4S BUK457-400A BUK457-400B T-37-13 BUK457 -400A -400B BUK457-400A BUK457-400B T0220AB PDF