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    BSS100 TRANSISTOR Search Results

    BSS100 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    BSS100 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS123

    Abstract: BSS100 equivalent BSS100 bss100 transistor
    Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features BSS100: 0.22A, 100V. RDS ON = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V These N-Channel logic level enhancement mode power field


    Original     		PDF BSS100 BSS123 BSS100: BSS123: BSS123 BSS100 equivalent bss100 transistor

    BSS100

    Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
    Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF BSS100 BSS123 BSS100: BSS123: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123

    BSS100

    Abstract: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92
    Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF BSS100 BSS123 BSS100: BSS123: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92

    74hct00

    Abstract: ST7226 ST72F344 microcontroller ST7 datasheet SETD 74FCT 74HCT AN1179 74HC40103 ST662A
    Text: ST7 FAMILY ICC PROTOCOL REFERENCE MANUAL INTRODUCTION This document is an advanced technical reference manual. It has been written for engineers who want to build their own ST7 programming, testing or debugging tools using the In-Circuit Communication ICC protocol. This document does not target engineers who only use


    Original     		PDF

    SP2083

    Abstract: ST72F344 ST72F521 74FCT 74HCT AN1179 ST662A ST72344 ST72F264 74HC40103
    Text: ST7 FAMILY ICC Protocol REFERENCE MANUAL April 2003 1 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF


    Original     		PDF

    ST7 ICC Family

    Abstract: 8251 programming application schematic diagram UPS inverter three phase 74HC40103 Logic Family Specifications 74hct00 pin configuration of 8251 ST72344 74hct74 DMC TOOLS microcontroller ST7 datasheet
    Text: ST7 FAMILY ICC Protocol REFERENCE MANUAL November 2003 1 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF


    Original     		PDF

    transistor 45 f 123

    Abstract: No abstract text available
    Text: c m p r M - iii n SEM IC ONDUCTO R September 1996 tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123: BSS123 transistor 45 f 123

    TAG 92 transistor

    Abstract: philips transformer 524 BSS100 BSS100 TO92 BTB 134
    Text: 711Gû2ti 00tj7BflH Ô15 M P H I N Philips Semiconductors Data sheet status Product specification date of issue November 1990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K REFERENCE DATA Direct interface to C-MOS, TTL, etc.


    OCR Scan     		PDF 00b7Bfl4 BSS100 7110flEb Vdd-60V 7Z88773 TAG 92 transistor philips transformer 524 BSS100 BSS100 TO92 BTB 134

    BSS123

    Abstract: No abstract text available
    Text: September 1996 F A IR C H IL D SEM IC ONDUCTO R tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123:

    BSS123

    Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
    Text: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123: k501130 BSS123 bS0113D 85S100 TRANSISTOR BSS123 K5011

    BSS123

    Abstract: BSS100 transistor BJ 017 bss100 transistor BSS100 TO92 BS8123 BSS100 TO-92 BSS10 bss123 transistor
    Text: i |_ | I q Septem ber 1996 S E M IC O N D U C T O R tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary,


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123: BSS123 transistor BJ 017 bss100 transistor BSS100 TO92 BS8123 BSS100 TO-92 BSS10 bss123 transistor

    bss100 transistor

    Abstract: BSS100 PINNING-TO-92 JZSS773
    Text: Philips C o m po nents Data sheet status P ro d u c t sp e cific a tio n data of issue N ov em b er 1990 FEATURES BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA • Direct interface to C-M O S, TTL, etc. SYM BOL


    OCR Scan     		PDF BSS100 PINNING-TO-92 JZSS773 003bl57 LL53S31 003bl2fi bss100 transistor BSS100

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t s ta tu s P ro d u ct sp ecification d a te o f is s u e N o v em b e r 1 990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA Direct interface to C-M O S, TTL, etc.


    OCR Scan     		PDF BSS100 003bl2b 0Q3bl37 D03fcil2fl

    Untitled

    Abstract: No abstract text available
    Text: BSS 100 S IP M O S Sm all-Signal Transistor • N channel • Enhancement mode • Logic Level • ^G S th = 0.8.2.0V Type ^DS !d f î DS(on) Package Marking BSS 100 100 V 0.22 A 6Q TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code Q62702-S499


    OCR Scan     		PDF Q62702-S499 Q62702-S007 Q62702-S206 E6288 E6296 E6325 BSS100

    Untitled

    Abstract: No abstract text available
    Text: BSS 100 In fin e o n taehnologifts SIPMOS Small-Slgnal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Type Vbs fe f l DS(on) Package Marking BSS 100 100 V 0.22 A 6Í2 TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code


    OCR Scan     		PDF Q62702-S499 Q62702-S007 Q62702-S206 E6288 E6296 E6325 S35bQ5 Q133777 SQT-89 B535bQ5

    1M4148

    Abstract: 1N41448 1M4148 diode BC327 circuit example 12-0-12 1A transformer Transistor BC327 Q1 12-0-12 transformer design 12-0-12 transformer used 12v dc supply BC337 circuit example HCF4093
    Text: /T T SGS-THOMSON * 7# . [ f f lD S S & IC T M S O g i TECHNICAL NOTE NOVEL PROTECTION AND GATE DRIVES FOR MOSFETs USED IN BRIDGE-LEG CONFIGURATIONS INTRODUCTION The bridge-leg is an important building block for many applications such as drives and switch-mode


    OCR Scan     		PDF 00V/DIV 1M4148 1N41448 1M4148 diode BC327 circuit example 12-0-12 1A transformer Transistor BC327 Q1 12-0-12 transformer design 12-0-12 transformer used 12v dc supply BC337 circuit example HCF4093

    S498

    Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
    Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e


    OCR Scan     		PDF 023SbOS lSb37 Q62702- BSS981' BSS1381Â OT-23 BSS3951Â O-202 BSS100 BSS123 S498 BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components

    BZX85C15V

    Abstract: 1N41448 p477 1M4148 p 477 mosfet discrete totem pole CIRCUIT hcf4093 TYPICAL APPLICATION
    Text: rz7 SGS-THOMSON ^ 7 Mrn ^D K©[l[Li©¥[^ Q R!]0©§ TECHNICAL NOTE NOVEL PROTECTION AND GATE DRIVES FOR MOSFETs USED IN BRIDGE-LEG CONFIGURATIONS INTRODUCTION Fig. 1 - B ridge configurations The bridge-leg is an im portant building block for many applications such as drives and switch-mode


    OCR Scan     		PDF 00V/DIV BZX85C15V 1N41448 p477 1M4148 p 477 mosfet discrete totem pole CIRCUIT hcf4093 TYPICAL APPLICATION

    BF247A

    Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
    Text: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150


    OCR Scan     		PDF BS170 BS208 BF904 BF904R BF904WR BS250 BC264D BF908 BSD12 BF245A BF247A bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR

    321 SOT

    Abstract: DIP-6 bsp300 SOT23_215 BSS125
    Text: SIEMENS Typenübersicht nach Produktgruppen Selection Guide by Product Groups SIPMOS Small Signal Transistors Type ^88 nto V ^OS(0n)mw mA Q Pese») V Package Page -1 .8 . .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 TO-92 TO-92 TO-92 TO-92 503 416


    OCR Scan     		PDF OT-223 OT-23 BSSOT-223 OT-89 321 SOT DIP-6 bsp300 SOT23_215 BSS125

    BST78

    Abstract: bsn204 bsn254 BSN20 to92 BSD254 sot89 15e
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL VERTICAL D-MOSFETS ratings type number typ. mS typ. (PF) c rs typ. (PF) package (Í2) characteristics t 3> ton2> typ. typ.


    OCR Scan     		PDF 15000s BST86 PMBF107 PMBF170 2N7002 BST78 bsn204 bsn254 BSN20 to92 BSD254 sot89 15e

    philips bsd215

    Abstract: BST110 BF909WR
    Text: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment


    OCR Scan     		PDF BC264A BC264B BC264C BC264D BF245A BST120 BST122 PHP112 PHP125 PHC2102501 philips bsd215 BST110 BF909WR

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    KF520

    Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
    Text: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5


    OCR Scan     		PDF 15Blatnà KF520 KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784