Untitled
Abstract: No abstract text available
Text: BSN204A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)250m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)
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BSN204A
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transistor w 431
Abstract: tL 431 transistor BSN204 transistor tl 431 BSN204A
Text: Philips Components BSN204/BSN204A Data «heat status Product specification date of issus December 1990 FEATURES N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.
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BSN204/BSN204A
BSN204)
BSN204A)
transistor w 431
tL 431 transistor
BSN204
transistor tl 431
BSN204A
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Untitled
Abstract: No abstract text available
Text: Philips Components Data heat status Product specification data of Issue December 1990 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • BSN204/BSN204A Direct interface to C-MOS, TTL, etc. SYMBOL VDS PARAMETER CONDITIONS
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BSN204/BSN204A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors D a ta s h e e t s ta tu s P r o d u c t s p e c if ic a t io n d a te o f is s u e A p r il 1 9 9 5 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc. • BSN204/BSN204A
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BSN204/BSN204A
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7110a2b
Abstract: BSN20 PHHI BSN204 BSN204A
Text: 7 1 1 D fl2 b D D b 7 7 MD b 0 2 • P H IN Philips Sem iconductors Data sheet statu« Product specification date of issue Decem ber 1990 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER CONDITIONS MAX. UNIT
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7110a2b
BSN204/BSN204A
BSN204)
BSN204A)
DDb77M3
7Z88773
BSN20
PHHI
BSN204
BSN204A
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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BF247A
Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
Text: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150
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BS170
BS208
BF904
BF904R
BF904WR
BS250
BC264D
BF908
BSD12
BF245A
BF247A
bs250 bs170
PMBFJ111
PMBFJ174
BSR56
BFT46
PHC21025
BF909WR
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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philips bsd215
Abstract: BST110 BF909WR
Text: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment
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BC264A
BC264B
BC264C
BC264D
BF245A
BST120
BST122
PHP112
PHP125
PHC2102501
philips bsd215
BST110
BF909WR
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