Untitled
Abstract: No abstract text available
Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW96B,
BPW96C
2002/95/EC
2002/96/EC
BPW96
9990electronic
2002/95/EC.
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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PDF
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BPW96B,
BPW96C
2002/95/EC
2002/96/EC
BPW96
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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Original
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PDF
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BPW96B,
BPW96C
2002/95/EC
2002/96/EC
BPW96
9990d
11-Mar-11
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BPW96
Abstract: BPW96B BPW96C
Text: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW96B,
BPW96C
2002/95/EC
2002/96/EC
BPW96
11-Mar-11
BPW96B
BPW96C
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BPW96
Abstract: BPW96C Infrared emitter 450 nm 8239 BPW96B
Text: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW96B,
BPW96C
2002/95/EC
2002/96/EC
BPW96
18-Jul-08
BPW96C
Infrared emitter 450 nm
8239
BPW96B
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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BPW96
BPW96
D-74025
16-Nov-99
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation.
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Original
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BPW96
BPW96
2002/95/EC
2002/96/EC
BPW96B
BPW96C
08-Apr-05
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A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer
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90F8548
SDP8600-001
95F5325
SDP8371-001
28H5849
28H5850
OPB933W55Z
08F2750
OPB963T55
08F2755
A 69157 scr
65k5
HEDS 5300
HCPL-900J-000E
HCPL 0636
DT 8210 IC
hcpl788
hcpl 1360
HEDS 8210
83K3
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BPW96
Abstract: No abstract text available
Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near
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BPW96
BPW96
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
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Untitled
Abstract: No abstract text available
Text: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near
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BPW96
BPW96
D-74025
29-Mar-04
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BPW96
Abstract: BPW96A BPW96B BPW96C
Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared
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BPW96
BPW96
2002/95/EC
2002/96/EC
08-Apr-05
BPW96A
BPW96B
BPW96C
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8239
Abstract: Vishay Telefunken Phototransistor BPW96 BPW96A BPW96B BPW96C
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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BPW96
BPW96
D-74025
16-Nov-99
8239
Vishay Telefunken Phototransistor
BPW96A
BPW96B
BPW96C
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near
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BPW96
BPW96
2002/95/EC
2002/96/EC
08-Apr-05
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bpw 104
Abstract: BPW96 BPW96A BPW96B BPW96C
Text: BPW 96 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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BPW96
D-74025
bpw 104
BPW96A
BPW96B
BPW96C
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Untitled
Abstract: No abstract text available
Text: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near
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Original
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BPW96
BPW96
D-74025
02-Jun-04
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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Original
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BPW96
BPW96
D-74025
16-Nov-99
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation.
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Original
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BPW96
BPW96
2002/95/EC
2002/96/EC
BPW96B
BPW96C
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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Original
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BPW96
BPW96
D-74025
20-May-99
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BPW96
Abstract: BPW96A BPW96B BPW96C
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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Original
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BPW96
BPW96
D-74025
16-Nov-99
BPW96A
BPW96B
BPW96C
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A 69157 scr
Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
Text: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)
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74K5145
74K5144
74K5146
74K5147
74K5166
74K5170
71K0256
71K0273
71K0255
71K0272
A 69157 scr
HCPL 1458
TRANSISTOR SMD 431H
SMPS 666 VER 2.3
SMPS 666 VER 2.1
acsl 086 s
LHi 878
2057 LED dot matrix display 5x7
smd ic A9A
42-M41
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TEMIC K153P
Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2
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WN1053
WN1087-18R
WN1087-TR1
WN1090
WN1125
WN1142
WN1158-TA
WN1165-TR1
WN1170
WN934
TEMIC K153P
TSHF5471
tfmw5380
dn1328
tdsr5156
dn904
TDSR5153
HS0038 IR sensor
TLVD4900
TCDF1910
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BPW85C
Abstract: No abstract text available
Text: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package
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BPW16N
BPW17N
BPW85A
BPW85B
BPW85C
BPW96A
BPW96B
BPW96C
BPV11
TEMT2100
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c1g smd
Abstract: bpv10nf TEMD2100
Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -
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OCR Scan
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CQY36N
CQY37N
TSUS4300
TSUS4400
CQX48A
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
c1g smd
bpv10nf
TEMD2100
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TDS05160
Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
Text: V I^ W Y Vishay Telefunken Table of Package Forms Part Number Package Form Part Number Package Form Part Number Package Form TLBR5410 8 TLHR4401 11 TLMH3100 1 TLDR4400 11 TLHR4405 11 TLMH3101 1 TLDR4900 11 TLHR4600 11 TLMK3100 1 TLDR5400 TLDR5800 8 TLHR4601
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TLBR5410
TLDR4400
TLDR4900
TLDR5400
TLDR5800
TLHE4900
TLHE5100
TLHE5101
TLHE5102
TLHE5800
TDS05160
TDS05150
TDS03160
TDS03150
TDSR5150
9999 DIODE
tsop1736
TLU02401
BPW2
silver ag wire Bond
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