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    BPW96B Search Results

    BPW96B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BPW96B Vishay Semiconductors Optical Sensors - Phototransistors, Sensors, Transducers, PHOTOTRANSISTOR NPN 5MM CLEAR Original PDF
    BPW96B Vishay Telefunken Phototransistor Module, 1nA Dark Current, 850nm Wavelength Original PDF
    BPW96B Vishay Telefunken Silicon NPN Phototransistor Original PDF
    BPW96B Telefunken Electronic Photo Detectors / Phototransistors / Photo Pin Diodes Scan PDF

    BPW96B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW96B, BPW96C 2002/95/EC 2002/96/EC BPW96 9990electronic 2002/95/EC. 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW96B, BPW96C 2002/95/EC 2002/96/EC BPW96 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW96B, BPW96C 2002/95/EC 2002/96/EC BPW96 9990d 11-Mar-11

    BPW96

    Abstract: BPW96B BPW96C
    Text: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW96B, BPW96C 2002/95/EC 2002/96/EC BPW96 11-Mar-11 BPW96B BPW96C

    BPW96

    Abstract: BPW96C Infrared emitter 450 nm 8239 BPW96B
    Text: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW96B, BPW96C 2002/95/EC 2002/96/EC BPW96 18-Jul-08 BPW96C Infrared emitter 450 nm 8239 BPW96B

    Untitled

    Abstract: No abstract text available
    Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original
    PDF BPW96 BPW96 D-74025 16-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation.


    Original
    PDF BPW96 BPW96 2002/95/EC 2002/96/EC BPW96B BPW96C 08-Apr-05

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original
    PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    BPW96

    Abstract: No abstract text available
    Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near


    Original
    PDF BPW96 BPW96 2002/95/EC 2002/96/EC D-74025 08-Mar-05

    Untitled

    Abstract: No abstract text available
    Text: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near


    Original
    PDF BPW96 BPW96 D-74025 29-Mar-04

    BPW96

    Abstract: BPW96A BPW96B BPW96C
    Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared


    Original
    PDF BPW96 BPW96 2002/95/EC 2002/96/EC 08-Apr-05 BPW96A BPW96B BPW96C

    8239

    Abstract: Vishay Telefunken Phototransistor BPW96 BPW96A BPW96B BPW96C
    Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original
    PDF BPW96 BPW96 D-74025 16-Nov-99 8239 Vishay Telefunken Phototransistor BPW96A BPW96B BPW96C

    Untitled

    Abstract: No abstract text available
    Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near


    Original
    PDF BPW96 BPW96 2002/95/EC 2002/96/EC 08-Apr-05

    bpw 104

    Abstract: BPW96 BPW96A BPW96B BPW96C
    Text: BPW 96 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original
    PDF BPW96 D-74025 bpw 104 BPW96A BPW96B BPW96C

    Untitled

    Abstract: No abstract text available
    Text: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near


    Original
    PDF BPW96 BPW96 D-74025 02-Jun-04

    Untitled

    Abstract: No abstract text available
    Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original
    PDF BPW96 BPW96 D-74025 16-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation.


    Original
    PDF BPW96 BPW96 2002/95/EC 2002/96/EC BPW96B BPW96C 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original
    PDF BPW96 BPW96 D-74025 20-May-99

    BPW96

    Abstract: BPW96A BPW96B BPW96C
    Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original
    PDF BPW96 BPW96 D-74025 16-Nov-99 BPW96A BPW96B BPW96C

    A 69157 scr

    Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
    Text: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)


    Original
    PDF 74K5145 74K5144 74K5146 74K5147 74K5166 74K5170 71K0256 71K0273 71K0255 71K0272 A 69157 scr HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original
    PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    BPW85C

    Abstract: No abstract text available
    Text: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package


    OCR Scan
    PDF BPW16N BPW17N BPW85A BPW85B BPW85C BPW96A BPW96B BPW96C BPV11 TEMT2100

    c1g smd

    Abstract: bpv10nf TEMD2100
    Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -


    OCR Scan
    PDF CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100

    TDS05160

    Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
    Text: V I^ W Y Vishay Telefunken Table of Package Forms Part Number Package Form Part Number Package Form Part Number Package Form TLBR5410 8 TLHR4401 11 TLMH3100 1 TLDR4400 11 TLHR4405 11 TLMH3101 1 TLDR4900 11 TLHR4600 11 TLMK3100 1 TLDR5400 TLDR5800 8 TLHR4601


    OCR Scan
    PDF TLBR5410 TLDR4400 TLDR4900 TLDR5400 TLDR5800 TLHE4900 TLHE5100 TLHE5101 TLHE5102 TLHE5800 TDS05160 TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond