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    BPW96C Search Results

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    BPW96C Price and Stock

    Vishay Semiconductors BPW96C

    PHOTOTRANSISTOR 450 TO 1080 NM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BPW96C Bulk 4,049 1
    • 1 $0.98
    • 10 $0.641
    • 100 $0.98
    • 1000 $0.33178
    • 10000 $0.29861
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    Quest Components BPW96C 100
    • 1 $0.6459
    • 10 $0.5383
    • 100 $0.4306
    • 1000 $0.4306
    • 10000 $0.4306
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    Vishay Intertechnologies BPW96C

    PHOTO TRANS. 5MM 20DEG-e4 - Bulk (Alt: BPW96C)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BPW96C Bulk 4 Weeks 4,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.29018
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    Mouser Electronics BPW96C 6,511
    • 1 $0.97
    • 10 $0.641
    • 100 $0.42
    • 1000 $0.331
    • 10000 $0.294
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    Newark BPW96C Bulk 4,002 1
    • 1 $0.97
    • 10 $0.641
    • 100 $0.42
    • 1000 $0.399
    • 10000 $0.399
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    Future Electronics BPW96C Bag 4 Weeks 4,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.3
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    TME BPW96C 3,868 1
    • 1 $0.943
    • 10 $0.509
    • 100 $0.369
    • 1000 $0.299
    • 10000 $0.267
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    Chip 1 Exchange BPW96C 23,981
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    Avnet Asia BPW96C 6 Weeks 4,000
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    EBV Elektronik BPW96C 5 Weeks 4,000
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    New Advantage Corporation BPW96C 14,484 1
    • 1 -
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    • 1000 $0.6694
    • 10000 $0.6694
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    Telefunken Semiconductor GmbH & Co Kg BPW96C

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    Bristol Electronics BPW96C 711
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    Temic Semiconductors BPW96C

    Photo Transistor, 830nm, 0.1A I(C)
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    ComSIT USA BPW96C 1,000
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    Vishay Intertechnologies BPW96C-MS21Z

    Phototransistor IR Chip NPN 850nm 2-Pin T-1 3/4 Bulk (Alt: BPW96C-MS21Z)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik BPW96C-MS21Z 5 Weeks 1
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    BPW96C Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BPW96C Vishay Intertechnology Silicon NPN Phototransistor Original PDF
    BPW96C Vishay Semiconductors Optical Sensors - Phototransistors, Sensors, Transducers, PHOTOTRANSISTOR NPN 5MM CLEAR Original PDF
    BPW96C Vishay Telefunken Phototransistor Module, 1nA Dark Current, 850nm Wavelength Original PDF
    BPW96C Telefunken Electronic Photo Detectors / Phototransistors / Photo Pin Diodes Scan PDF

    BPW96C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW96B, BPW96C 2002/95/EC 2002/96/EC BPW96 9990electronic 2002/95/EC. 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW96B, BPW96C 2002/95/EC 2002/96/EC BPW96 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW96B, BPW96C 2002/95/EC 2002/96/EC BPW96 9990d 11-Mar-11

    BPW96

    Abstract: BPW96B BPW96C
    Text: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW96B, BPW96C 2002/95/EC 2002/96/EC BPW96 11-Mar-11 BPW96B BPW96C

    BPW96

    Abstract: BPW96C Infrared emitter 450 nm 8239 BPW96B
    Text: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPW96B, BPW96C 2002/95/EC 2002/96/EC BPW96 18-Jul-08 BPW96C Infrared emitter 450 nm 8239 BPW96B

    Untitled

    Abstract: No abstract text available
    Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original     		PDF BPW96 BPW96 D-74025 16-Nov-99

    TSSP4038

    Abstract: No abstract text available
    Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original     		PDF VMN-MS6520-1311 TSSP4038

    Untitled

    Abstract: No abstract text available
    Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation.


    Original     		PDF BPW96 BPW96 2002/95/EC 2002/96/EC BPW96B BPW96C 08-Apr-05

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original     		PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    BPW96

    Abstract: No abstract text available
    Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near


    Original     		PDF BPW96 BPW96 2002/95/EC 2002/96/EC D-74025 08-Mar-05

    Untitled

    Abstract: No abstract text available
    Text: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near


    Original     		PDF BPW96 BPW96 D-74025 29-Mar-04

    BPW96

    Abstract: BPW96A BPW96B BPW96C
    Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared


    Original     		PDF BPW96 BPW96 2002/95/EC 2002/96/EC 08-Apr-05 BPW96A BPW96B BPW96C

    8239

    Abstract: Vishay Telefunken Phototransistor BPW96 BPW96A BPW96B BPW96C
    Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original     		PDF BPW96 BPW96 D-74025 16-Nov-99 8239 Vishay Telefunken Phototransistor BPW96A BPW96B BPW96C

    tept5600 response time

    Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
    Text: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily


    Original     		PDF emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000

    bpw 104

    Abstract: BPW96 BPW96A BPW96B BPW96C
    Text: BPW 96 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original     		PDF BPW96 D-74025 bpw 104 BPW96A BPW96B BPW96C

    Leader 8020 schematics Oscilloscope

    Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s

    Untitled

    Abstract: No abstract text available
    Text: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near


    Original     		PDF BPW96 BPW96 D-74025 02-Jun-04

    Untitled

    Abstract: No abstract text available
    Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original     		PDF BPW96 BPW96 D-74025 16-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation.


    Original     		PDF BPW96 BPW96 2002/95/EC 2002/96/EC BPW96B BPW96C 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


    Original     		PDF BPW96 BPW96 D-74025 20-May-99

    L-53P3BT

    Abstract: l53p3bt IRE5 L53P3C BPW40 IRE-5 53p3bt L-53P3C BPW96C B100
    Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 $0T0TpaH3MCT0pbi b nnacTMKOBOM Kopnyce □ 5 MM Kofl: flnH H a BonHN y ro n B T O H K e M aK C . o63opa UcEO TeMHOBOM TOK : TnnrmH3bi H yB C TB H T. X max IRE5 L-53P3C L-53P3BT BPW40 BPW96C 940


    OCR Scan     		PDF L-53P3C L-53P3BT BPW40 BPW96C o63opa HA/10 L-53P3BT l53p3bt IRE5 L53P3C BPW40 IRE-5 53p3bt L-53P3C BPW96C B100

    BPW85C

    Abstract: No abstract text available
    Text: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package


    OCR Scan     		PDF BPW16N BPW17N BPW85A BPW85B BPW85C BPW96A BPW96B BPW96C BPV11 TEMT2100

    c1g smd

    Abstract: bpv10nf TEMD2100
    Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -


    OCR Scan     		PDF CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100

    BPW 64 photo

    Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
    Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package


    OCR Scan     		PDF BPW16N BPW17N BPW85C BPW96C BPV11 BPV23FL TESS5400 900nm) BPW 64 photo BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na